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    MMDB30 Search Results

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    MMDB30 Price and Stock

    MACOM MMDB30-0402

    DIODE,SRD-BEAMLEAD-PACKAGE, 0402
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    DigiKey MMDB30-0402 Tray 100 25
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    Mouser Electronics MMDB30-0402 25
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    Richardson RFPD MMDB30-0402 1
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    MACOM MMDB30-B11

    DIODE,SRD-BEAMLEAD, B11
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    DigiKey MMDB30-B11 Bulk 58
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    Mouser Electronics MMDB30-B11 50
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    MACOM MMDB30-0805

    DIODE,SRD-BEAMLEAD-PACKAGE, 0805
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    DigiKey MMDB30-0805 Bulk 37
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    Mouser Electronics MMDB30-0805
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    MACOM MMDB30-E28X

    DIODE, BEAMLEAD SRD, E28X
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    DigiKey MMDB30-E28X Tray
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    Mouser Electronics MMDB30-E28X
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    Verical MMDB30-E28X 13 2
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    Richardson RFPD MMDB30-E28X 13 1
    • 1 $38.75
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    Chip1Stop MMDB30-E28X 13
    • 1 $68.5
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    Aeroflex Inc MMDB30-0805-2

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    Bristol Electronics MMDB30-0805-2 2
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    MMDB30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMDB30-B11 Metelics Beam Lead Step Recovery Diodes Scan PDF

    MMDB30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


    Original     		PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    smmd-840

    Abstract: MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835
    Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.


    Original     		PDF MIL-PRF-19500 MIL-PRF-38534 smmd-840 MMD-810 MMD832-0805-2 SMMD837-SOD323 MMDB30-0402 MMD-835

    MMD0840

    Abstract: MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2
    Text: Silicon Step Recovery Diodes Description Features The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.


    Original     		PDF MIL-PRF-19500 MIL-PRF-38534 MMD0840 MMD810-T86 MMDB30-B11 mmdb30-0402 MMDB30-E28 MMD820-0805-2 SMMD-840 MMD820-E28 SMMD840-SOD323 MMD805-0805-2

    MSPD2018

    Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
    Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for


    Original     		PDF A17084 MSPD2018 m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345

    MMD0840

    Abstract: mmd805 SMMD-840 SMMD-805 MMD-810 step recovery diode 832 MMD-840 MMD-835 MMD-805 SMMD830
    Text: Spice Model for Metelics Step Recovery Diodes 1 of 2 Spice does not include the Transition Time in the diode model. The parameter TT in spice is the minority carrier life time. Model for MMD805 .MODEL D_805 IS=500.0E-15 N=1.3 RS=0.13 CJ0=4.55E-12 VJ=0.5 M=0.235 XTI=3.0 EG=1.12


    Original     		PDF MMD805 0E-15 55E-12 10E-6 30E-9) MMD-805, SMMD805 MMD-810, SMMD810 MMD-820, MMD0840 mmd805 SMMD-840 SMMD-805 MMD-810 step recovery diode 832 MMD-840 MMD-835 MMD-805 SMMD830

    MMDB30-B11

    Abstract: sampling gate STEP RECOVERY DIODES CPA01 MMDB35-B11 MMDB45-B11 B1135 "Microwave Diodes" MMDB35B11
    Text: FEATURES • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation • Non-Destruct Transition Time Testing Available MAXIMUM RATINGS Total Power Dissipation. 250 mWat +25°C


    OCR Scan     		PDF bOS13S2 -65to MMDB35-B11 MMDB45-B11 TFP-1034 015pF MMDB30-B11 sampling gate STEP RECOVERY DIODES CPA01 B1135 "Microwave Diodes" MMDB35B11

    MMDB-45-B11

    Abstract: MMDB30-B11
    Text: BEAM LEAD STEP RECOVERY DIODES i metelics CORPORATION •.- •.• •C .: • FEATURES •'.*! -, ' . - ■' • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation


    OCR Scan     		PDF dioMMDB35-B11 MMDB45-B11 MMDB-45-B11 MMDB30-B11

    step recovery diodes

    Abstract: No abstract text available
    Text: BEAM LEAD STEP RECOVERY DIODES 111 1 m e te Ü C S * - C OR POR ATI ON FEATURES • Low Inductance Rugged Beam Lead Construction • Transition Times Less Than 30 picoseconds in 50 n System • Oxide and Polyimide Passivation • Non-Destruct Transition Time Testing


    OCR Scan     		PDF