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    MMBT3906 TP Search Results

    MMBT3906 TP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT3906-TP Micro Commercial Components Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS SS PNP 40V 300MW SOT23 Original PDF

    MMBT3906 TP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT3906 PHILIPS

    Abstract: MHC462 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 MMBT3906 PNP switching transistor Product specification Supersedes data of 2000 Apr 11 2003 Mar 18 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA


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    PDF M3D088 MMBT3906 MMBT3904. SCA75 613514/02/pp8 MMBT3906 PHILIPS MHC462 MMBT3904 MMBT3906

    MMBT3904

    Abstract: MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA


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    PDF M3D088 MMBT3906 MMBT3904. 613514/02/pp8 MMBT3904 MMBT3906

    MMBT3906-2A

    Abstract: MMBT3904 MMBT3906
    Text: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2009-04-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1


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    PDF MMBT3906 OT-23 O-236) UL94V-0 MMBT3904 MMBT3906-2A MMBT3904 MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-10-17 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1


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    PDF MMBT3906 OT-23 O-236) UL94V-0 MMBT3904

    MMBT3906 NXP

    Abstract: MGD624 mmbt3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA


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    PDF M3D088 MMBT3906 MMBT3904. MMBT3906 613514/02/pp8 771-MMBT3906T/R MMBT3906 NXP MGD624

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-16 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1


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    PDF MMBT3906 OT-23 O-236) UL94V-0 MMBT3904

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 QUICK REFERENCE DATA FEATURES • Collector current capability IC = −200 mA


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    PDF M3D088 MMBT3906 MMBT3904. 613514/02/pp8

    MMBT3906 PHILIPS

    Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


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    PDF M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161

    MMBT3906

    Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 EHP00771 EHP00768 Jul-28-2003 MMBT3906 SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 MMBT3906 Surface mount general purpose Si-epitaxial transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-11-07 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm] 1=B


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    PDF MMBT3906 OT-23 O-236) UL94V-0 MMBT3904

    MMBT3906

    Abstract: No abstract text available
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT3906 product family SOT-23 Plastic-Encapsulate Biploar Transistors


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    PDF MMBT3906 OT-23 200mA 350mW 250MHz -10mAdc, -10mAdc MMBT3906

    MMBT3906

    Abstract: MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23
    Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906 Pb Lead-free MMBT3904 . z Low Current (Max:-100mA). z Low Voltage(Max:-40v). APPLICATIONS


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    PDF MMBT3906 MMBT3904) -100mA) OT-23 BL/SSSTC062 MMBT3906 MMBT3906 SOT-23 MMBT3906-2A MMBT3906 2A MMBT3904 2A sot-23 MMBT3906 galaxy mmbt3906 2a sot-23

    sot23 s1a marking

    Abstract: marking code S1A sot23
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 sot23 s1a marking marking code S1A sot23

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 SMBT3906U

    TRANSISTOR S2A

    Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ TRANSISTOR S2A SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3906

    sot23 s1a marking

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    PDF SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 E6433 sot23 s1a marking

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ SMBT3906U

    s2A SOT23

    Abstract: marking s2A sot23 SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 s2A SOT23 marking s2A sot23 SMBT3906U

    transistor marking s2a

    Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    PDF SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking s2a SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3906 s2A SOT23 infineon marking code B2 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    PDF SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/MMBT3904