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    MMBT3906 36 Search Results

    SF Impression Pixel

    MMBT3906 36 Price and Stock

    Rectron Semiconductor MMBT3906

    Small Signal Bipolar Transistor - 40V V(BR)CEO - 1-Element - PNP - Silicon
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    Onlinecomponents.com MMBT3906 6,000
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    MMBT3906 36 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ST-300

    Abstract: MMBT3906 SOT-23
    Text: MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904 s


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    MMBT3906 OT-23 MMBT3904 OT-23 ST-300 MMBT3906 SOT-23 PDF

    marking 36

    Abstract: MMBT3906 TRANSISTOR MINIATURE MMBT3904 MMBT3906 36 MMBT3906 SOT-23
    Text: MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904


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    MMBT3906 OT-23 MMBT3904 OT-23 marking 36 MMBT3906 TRANSISTOR MINIATURE MMBT3904 MMBT3906 36 MMBT3906 SOT-23 PDF

    MMBT3904 SOT-23

    Abstract: MMBT3906 SOT-23
    Text: MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904


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    MMBT3906 OT-23 MMBT3904 OT-23 MMBT3904 SOT-23 MMBT3906 SOT-23 PDF

    MMBT3904

    Abstract: MMBT3906
    Text: MMBT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking MMBT3906 36 SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904


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    MMBT3906 OT-23 MMBT3904 OT-23 MMBT3904 MMBT3906 PDF

    MMBT3906

    Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
    Text: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­


    OCR Scan
    MMBT3906 MMPQ3906 PZT3906 2N3906 MMBT3906 OT-23 MMPQ3906 SOIC-16 OT-223 model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23 PDF

    MMBT3906

    Abstract: No abstract text available
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 PDF

    2n3906 2a

    Abstract: TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 PZT3906 OT-23 2n3906 2a TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906 PDF

    model of 2n3906

    Abstract: No abstract text available
    Text: MMBT3906 PZT3906 C C C B E TO-92 E B SOT-23 B SOT-223 E C Mark: 2A 2N3906 / MMBT3906 / PZT3906 2N3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 model of 2n3906 PDF

    2n3906

    Abstract: MMBT3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU PDF

    MBT3906

    Abstract: BT180
    Text: MMBT3906 MMPQ3 906 c / MMBT3906 2N3906 TO-92 B ‘ PZT3906 PZT3906 MMPQ3906 SO T-223 SO IC-16 PNP General P u r p o s e Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 jiA to 100 mA. Sourced


    OCR Scan
    2N3906 MMBT3906 2N3906 PZT3906 MMPQ3906 IC-16 T-223 MBT3906 BT180 PDF

    Mmbt3906

    Abstract: 2N3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU PDF

    2N3906

    Abstract: 2N3906 die 2N3906 fairchild die 728p MMBT3906 MMPQ3906 PZT3906
    Text: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906 die 2N3906 fairchild die 728p MMPQ3906 PZT3906 PDF

    MMBT3906 spice

    Abstract: 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141
    Text: 2N3906 / MMBT3906 / PZT3906 FAIRCHILD S E M IC O N D U C T O R tm 2N3906 C MMBT3906 •# TO-92 BÎ SOT-23 B Mark: 2A PZT3906 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA. Sourced


    OCR Scan
    2N3906 PZT3906 OT-223 MMBT3906 OT-23 MMBT3906 spice 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3906 / MMBT3906 F A IR C H IL D S E M IC O N D U C T O R tm 2N3906 ' BE # TO-92 SOT-23 / PZT3906 C MMBT3906 B Mark: 2A PZT3906 B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 ¡iA to 100 mA. Sourced


    OCR Scan
    2N3906 MMBT3906 2N3906 OT-23 PZT3906 OT-223 BT3906 MMPQ3906 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 SMBT3906U PDF

    FLC 100

    Abstract: 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16
    Text: 2N39061 MMBT39061 MMPQ39061 PZT3906 & Discrete POWER & Signal Technologies National Semiconductor” MMBT3906 2N3906 SOT-23 B Mark: 2A MMPQ3906 PZT3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­


    OCR Scan
    2N3906 MMPQ3906 MMBT3906 PZT3906 SOIC-16 OT-223 rO-92 b5D113D 0QMQb71 FLC 100 728p cny 76 200U 2N3906 MMBT3906 MMPQ3906 PZT3906 SOIC-16 PDF

    TRANSISTOR S2A

    Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ TRANSISTOR S2A SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3906 PDF

    sot23 s1a marking

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    SMBT3904. MMBT3904 SMBT3904S: SMBT3906. MMBT3906 SMBT3904/MMBT3904 SMBT3904S OT363 E6433 sot23 s1a marking PDF

    transistor marking S2A

    Abstract: SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking S2A SMBT3906U PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ SMBT3906U PDF

    s2A SOT23

    Abstract: marking s2A sot23 SMBT3906U
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3906S/ SMBT3906/ MMBT3906 s2A SOT23 marking s2A sot23 SMBT3906U PDF

    transistor marking s2a

    Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
    Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:


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    SMBT3906. MMBT3906 SMBT3906S SMBT3906U: SMBT3904. MMBT3904 SMBT3904S SMBT3906S/U EHA07175 SMBT3906/ transistor marking s2a SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3906 s2A SOT23 infineon marking code B2 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906


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    SMBT3904. MMBT3904 SMBT3904S SMBT3904U: SMBT3906. MMBT3906 SMBT3906S/U EHA07178 SMBT3904/MMBT3904 PDF