1AM sot 23
Abstract: 1am surface mount diode 1N916 MMBT3904LT1 motorola MMBT3904LT1
Text: MOTOROLA Order this document by MMBT3904LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage
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MMBT3904LT1/D
MMBT3904LT1
MMBT3904LT1/D*
1AM sot 23
1am surface mount diode
1N916
MMBT3904LT1
motorola MMBT3904LT1
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1N916
Abstract: MMBT3904LT1 transistor marking 1am
Text: MOTOROLA Order this document by MMBT3904LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage
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MMBT3904LT1/D
MMBT3904LT1
MMBT3904LT1/D*
1N916
MMBT3904LT1
transistor marking 1am
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1AM marking transistor
Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range
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MMBT3904LT1
OT-23
OT-23
10mAdc,
10mAdc
100MHz
MMBT3904LT1
1AM marking transistor
transistor 1am
transistor marking 1am
MARKING 1AM
sot23 marking 1AM
MMBT3904LT1 1AM
1AM marking
1AM transistor
sot-23 Marking 1am
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transistor marking 1am
Abstract: No abstract text available
Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0
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MMBT3904LT1
transistor marking 1am
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1N916
Abstract: MMBT3904LT1
Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc
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MMBT3904LT1
r14525
MMBT3904LT1/D
1N916
MMBT3904LT1
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MMBT3904LT3G
Abstract: 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM
Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage
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MMBT3904LT1
MMBT3904LT1/D
MMBT3904LT3G
1N916
MMBT3904LT1
MMBT3904LT1G
MMBT3904LT3
1AM 6
marking code 1AM
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MMBT3904LT1G
Abstract: 1AMM MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 MMBT3904LT1 1AM transistor 1am
Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage
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MMBT3904LT1
MMBT3904LT1/D
MMBT3904LT1G
1AMM
MMBT3904LT3G
1N916
MMBT3904LT1
MMBT3904LT3
MMBT3904LT1 1AM
transistor 1am
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MMBT3904LT3G
Abstract: MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3
Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage
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MMBT3904LT1
MMBT3904LT1/D
MMBT3904LT3G
MMBT3904LT1 1AM
1N916
MMBT3904LT1
MMBT3904LT1G
MMBT3904LT3
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mbt3904lt1
Abstract: MBT3904L marking code 1AM MBT3904LT
Text: WILLAS FM120-M+ MMBT3904LT1 THRU General Purpose FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKYTransistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse
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FM120-M+
MMBT3904LTHRU
FM1200-M+
OD-123+
OD-123H
3000/Tape
FM120-MH
FM130-MH
FM140-MH
FM150-MH
mbt3904lt1
MBT3904L
marking code 1AM
MBT3904LT
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1N916
Abstract: MMBT3904LT1
Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0
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MMBT3904LT1
r14525
MMBT3904LT1/D
1N916
MMBT3904LT1
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marking code 1AM
Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage
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MMBT3904LT1
marking code 1AM
1am transistor
MMBT3904LT3G
equivalent of 1AM
transistor marking 1am
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IC 556 DATASHEET
Abstract: 1AM sot 23 1AM transistor 1am2 transistor marking 1am transistor 1am 1AM marking transistor equivalent of 1AM MMBT3904LT1G datasheet 1am
Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage
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MMBT3904LT1
MMBT3904LT1/D
IC 556 DATASHEET
1AM sot 23
1AM transistor
1am2
transistor marking 1am
transistor 1am
1AM marking transistor
equivalent of 1AM
MMBT3904LT1G
datasheet 1am
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MMBT3904LT1G
Abstract: MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23
Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage
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MMBT3904LT1
MMBT3904LT1G
MMBT3904LT3G
1N916
MMBT3904LT1
MMBT3904LT3
sot-23 Marking 1am
sot 23 marking code 1AM
SOA SOT23
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12 H 595
Abstract: sot-23 Marking 1am
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage
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MMBT3904LT1
236AB)
556NOT
12 H 595
sot-23 Marking 1am
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O116
Abstract: 1AM marking transistor MMBT3904LT1 1AM 1N916 MMBT3904LT1
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage
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MMBT3904LT1
236AB)
O116
1AM marking transistor
MMBT3904LT1 1AM
1N916
MMBT3904LT1
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current — Continuous
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MMBT3904LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage
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OT-23
MMBT3904LT1
OT-23
10mAdc,
10mAdc
MMBT3904LT1
100MHz
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage
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MMBT3904LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃
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OT-23
MMBT3904LT1
MMBT3904LT1
100MHz
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.2 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V 60 Operating and storage junction temperature range
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OT-23
MMBT3904LT1TRANSISTOR
100MHz
MMBT3904LT1
10mAdc,
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mbt3904lt1
Abstract: BT3904LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0
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OCR Scan
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MMBT3904LT1
OT-23
CTO-236AB)
BT3904LT1
GT31D0
mbt3904lt1
BT3904LT1
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1am transistor
Abstract: T3904L equivalent of transistor D 2331 bt39
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon MMBT3904LT1 COLLECTOR Motorola Preferred Device 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit C o lle c to r-E m itte r Voltage v CEO 40 Vdc C o lle c to r-B a s e Voltage
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MMBT3904LT1
1am transistor
T3904L
equivalent of transistor D 2331
bt39
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BT3904
Abstract: 2N3903 MOTOROLA SOT-23 BT3904LT1
Text: M A X IM U M RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage v EBO 6.0 Vdc 'c 200 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C r »j a 656 ° c /w pd 300 mW 2.4 m w rc r 0JA 417 ° c /w
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MMBT3904LT1*
OT-23
O-236AB)
BT3904LT1
BT3904
2N3903 MOTOROLA SOT-23
BT3904LT1
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Untitled
Abstract: No abstract text available
Text: M A X IM U M R A T IN G S Rating Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CEO 40 Vdc C o lle c to r-B a s e V o lta g e VCBO 60 Vdc v EBO 6.0 Vdc 'c 200 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W :C RfiJA 556 °CW PD 300 mW 2.4 m W =C r *J A
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MMBT3904LT1*
OT-23
O-236AB)
mBT3904LT1
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