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    MMBT3904LT Price and Stock

    onsemi SMMBT3904LT3G

    TRANS NPN 40V 0.2A SOT23-3
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    DigiKey SMMBT3904LT3G Reel 50,000 10,000
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    SMMBT3904LT3G Digi-Reel 1
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    Mouser Electronics SMMBT3904LT3G 24,166
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    Rochester Electronics SMMBT3904LT3G 13,850 1
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    Infineon Technologies AG MMBT3904LT1HTSA1

    TRANS NPN 40V 0.2A SOT23
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    DigiKey MMBT3904LT1HTSA1 Reel 39,000 3,000
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    MMBT3904LT1HTSA1 Cut Tape 2,069 1
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    MMBT3904LT1HTSA1 Digi-Reel 1
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    Mouser Electronics MMBT3904LT1HTSA1 246,902
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    Rochester Electronics LLC SMMBT3904LT3

    TRANS NPN 40V 0.2A SOT23-3
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    DigiKey SMMBT3904LT3 Bulk 24,239 5,323
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    onsemi MMBT3904LT3

    TRANS NPN 40V 0.2A SOT23
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    Bristol Electronics MMBT3904LT3 1,505 89
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    onsemi MMBT3904LT1G

    TRANS NPN 40V 0.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT3904LT1G Digi-Reel 1
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    MMBT3904LT1G Reel 36 Weeks 90,000
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    Mouser Electronics MMBT3904LT1G 1,259,973
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    MMBT3904LT1G Cut Tape 152,558 1
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    MMBT3904LT1G Reel 54,000 3,000
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    Rochester Electronics MMBT3904LT1G 55,988 1
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    TME MMBT3904LT1G 21,745 1
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    New Advantage Corporation MMBT3904LT1G 489,000 1
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    MMBT3904LT Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMBT3904LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT3904LT1 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    MMBT3904LT1 Freescale Semiconductor TRANS GP BJT NPN 40V 0.2A 3SOT-23 T/R Original PDF
    MMBT3904LT1 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR HI-VOLT NPN SOT-23 Original PDF
    MMBT3904LT1 Leshan Radio Company 40 V, general purpose transistor Original PDF
    MMBT3904LT1 Motorola General Purpose Transistor Original PDF
    MMBT3904LT1 Motorola Silicon BiDirectional Switches - Diode Thyristors Original PDF
    MMBT3904LT1 Motorola General Purpose Transistor NPN Silicon Original PDF
    MMBT3904LT1 On Semiconductor General Purpose Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT3904LT1 On Semiconductor General Purpose Transistor NPN Original PDF
    MMBT3904LT1 On Semiconductor General Purpose Transistor Original PDF
    MMBT3904LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar, NPN, Surface Mount, General Purpose, Pkg Style SOT23 Scan PDF
    MMBT3904LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBT3904LT1-D On Semiconductor General Purpose Transistor NPN Silicon Original PDF
    MMBT3904LT1G Freescale Semiconductor TRANS GP BJT NPN 40V 0.2A 3SOT-23 T/R Original PDF
    MMBT3904LT1G On Semiconductor General Purpose Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT3904LT1HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 40V 0.2A SOT-23 Original PDF
    MMBT3904LT3 Freescale Semiconductor TRANS GP BJT NPN 40V 0.2A 3SOT-23 T/R Original PDF
    MMBT3904LT3 Infineon Technologies Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 40V 200MA SOT-23 Original PDF
    MMBT3904LT3 On Semiconductor General Purpose Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF

    MMBT3904LT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT3904LT1G

    Abstract: MMBT3904LT3G MMBT3904LT1G equivalent 1N916 sot-23 Marking 1am
    Text: MMBT3904LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage


    Original
    PDF MMBT3904LT1G MMBT3904LT1/D MMBT3904LT1G MMBT3904LT3G MMBT3904LT1G equivalent 1N916 sot-23 Marking 1am

    MMBT3904LT1

    Abstract: No abstract text available
    Text: MMBT3904LT1 Transistors NPN FEATURES „ Power dissipation, PCM: 0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ „ SOT-23 plastic-encapsulate package


    Original
    PDF MMBT3904LT1 OT-23 MMBT3904LT1

    transistor marking 1am

    Abstract: No abstract text available
    Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0


    Original
    PDF MMBT3904LT1 transistor marking 1am

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23 MMBT3904LT1 OT-23

    Untitled

    Abstract: No abstract text available
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.2 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V 60 Operating and storage junction temperature range


    Original
    PDF OT-23 MMBT3904LT1TRANSISTOR 100MHz MMBT3904LT1 10mAdc,

    mmbt3904lti

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic


    Original
    PDF MMBT3906LT1 OT-23 MMBT3904LTI OT-23 MIL-STD-202E 125OC -55OC

    MMBT3904LT1G

    Abstract: 1AMM MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 MMBT3904LT1 1AM transistor 1am
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage


    Original
    PDF MMBT3904LT1 MMBT3904LT1/D MMBT3904LT1G 1AMM MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 MMBT3904LT1 1AM transistor 1am

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage


    Original
    PDF MMBT3904LT1 236AB)

    1AM marking transistor

    Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
    Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF MMBT3904LT1 OT-23 OT-23 10mAdc, 10mAdc 100MHz MMBT3904LT1 1AM marking transistor transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking 1AM transistor sot-23 Marking 1am

    TRANSISTOR MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3904LT1
    Text: MMBT3904LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3906LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


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    PDF MMBT3904LT1 MMBT3906LT1 225mW OT-23 TRANSISTOR MMBT3904LT1 MMBT3906LT1 MMBT3904LT1

    TRANSISTOR MMBT3904LT1

    Abstract: No abstract text available
    Text: MMBT3906LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT3904LT1 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -40V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    PDF MMBT3906LT1 MMBT3904LT1 225mW OT-23 TRANSISTOR MMBT3904LT1

    MMBT3904LT1G

    Abstract: MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage


    Original
    PDF MMBT3904LT1 MMBT3904LT1G MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23

    O116

    Abstract: 1AM marking transistor MMBT3904LT1 1AM 1N916 MMBT3904LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage


    Original
    PDF MMBT3904LT1 236AB) O116 1AM marking transistor MMBT3904LT1 1AM 1N916 MMBT3904LT1

    1N916

    Abstract: MMBT3904LT1
    Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0


    Original
    PDF MMBT3904LT1 r14525 MMBT3904LT1/D 1N916 MMBT3904LT1

    MMBT3904LT1

    Abstract: MMBT3906LT1 MMBT3906LT1 semtech
    Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage


    Original
    PDF MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1 MMBT3906LT1 semtech

    MMBT3904LT1

    Abstract: MMBT3906LT1
    Text: MMBT3906LT1 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904LT1 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta=25 oC Symbol Value Unit Collector Base Voltage


    Original
    PDF MMBT3906LT1 MMBT3904LT1 OT-23 100mA MMBT3906LT1

    MMBT3904LT1G

    Abstract: MMBT3904LT3G MMBT3904LT1 MARKING 1AM 1N916 sot-23 Marking 1am
    Text: MMBT3904LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage


    Original
    PDF MMBT3904LT1G MMBT3904LT1/D MMBT3904LT1G MMBT3904LT3G MMBT3904LT1 MARKING 1AM 1N916 sot-23 Marking 1am

    MMBT3904LT3G

    Abstract: 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    PDF MMBT3904LT1 MMBT3904LT1/D MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 1AM 6 marking code 1AM

    1N916

    Abstract: MMBT3904LT1
    Text: ON Semiconductort General Purpose Transistor MMBT3904LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc


    Original
    PDF MMBT3904LT1 r14525 MMBT3904LT1/D 1N916 MMBT3904LT1

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT3904LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.2 W(Tamb=25OC) * Collector current ICM 0.2 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range


    Original
    PDF MMBT3904LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original
    PDF OT-23 MMBT3906LT1 MMBT3904LT1 -10mA -50mA 100MHz -10mA

    MMBT3904LT3G

    Abstract: MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original
    PDF MMBT3904LT1 MMBT3904LT1/D MMBT3904LT3G MMBT3904LT1 1AM 1N916 MMBT3904LT1 MMBT3904LT1G MMBT3904LT3

    MMBT3904LT1

    Abstract: 9B SOT23
    Text: Hnnnm SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITER FEATURES 3. COLLECTOR Power dissipation 0-2 Pcm: 2.4 W (T am b=25t) Collector current I CM: 0 .2 A Collector-base voltage 60 V Operating and storage junction temperature range


    OCR Scan
    PDF OT-23 MMBT3904LT1 100JJA, 100MHz 10mAdc, 10mAdc 9B SOT23

    mbt3904lt1

    Abstract: BT3904LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0


    OCR Scan
    PDF MMBT3904LT1 OT-23 CTO-236AB) BT3904LT1 GT31D0 mbt3904lt1 BT3904LT1