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    MMBT101 Price and Stock

    Micro Commercial Components MMBT1015-L-TP

    TRANS PNP 50V 0.15A SOT-23
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    Micro Commercial Components MMBT1015-H-TP

    TRANS PNP 50V 0.15A SOT-23
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    MMBT101 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT101 National Semiconductor NPN General Purpose Amplifier Scan PDF
    MMBT101 National Semiconductor Surface Mount Transistors Scan PDF
    MMBT1010 E-Tech Electronics Low Saturation Voltage Original PDF
    MMBT1010LT1 E-Tech Electronics Low Saturation Voltage Original PDF
    MMBT1010LT1 Leshan Radio Company Low Saturation Voltage Original PDF
    MMBT1010LT1 Motorola PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT Original PDF
    MMBT1010LT1 On Semiconductor Low Saturation Voltage PNP Silicon Driver Transistors Original PDF
    MMBT1010LT1-D On Semiconductor Low Saturation Voltage PNP Silicon Driver Transist Original PDF
    MMBT1010T1 On Semiconductor PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT Original PDF
    MMBT1015 Micro Commercial Components PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    MMBT1015 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT1015 Unisonic Technologies LOW FREQUENCY PNP AMPLIFIER TRANSISTOR Original PDF
    MMBT1015-X-AC3-R Unisonic Technologies LOW FREQUENCY PNP AMPLIFIER TRANSISTOR Original PDF
    MMBT1015-X-AE3-R Unisonic Technologies LOW FREQUENCY PNP AMPLIFIER TRANSISTOR Original PDF
    MMBT1015-X-AL3-R Unisonic Technologies LOW FREQUENCY PNP AMPLIFIER TRANSISTOR Original PDF

    MMBT101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015


    Original     		MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815-x-AC3-6-R MMBT1815L-x-AC3-6-R MMBT1815-x-AE3-6-R MMBT1815L-x-AE3-6-R MMBT1815-x-AN3-6-R MMBT1815L-x-AN3-6-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR 3 FEATURES 1 2 *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1015


    Original     		MMBT1815 150mA MMBT1015 OT-23 MMBT1815L MMBT1815-AE3-R MMBT1815L-AE3-R OT-23 QW-R206-014 PDF

    MARKING A4 transistor

    Abstract: A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 Lead-free: MMBT1015L Halogen-free: MMBT1015G


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L MMBT1015G MMBT1015-x-AC3-R MMBT1015-x-AE3-R MMBT1015-x-AL3-R MMBT1015-x-AN3-R MMBT1015L-x-AC3-R MARKING A4 transistor A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1015 Features • • • • • PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA


    Original     		MMBT1015 150mA MBT1815 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1815 Features • • • • NPN EPITAXIAL Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complimentary to MMBT1015


    Original     		MMBT1815 150mA MMBT1015 OT-23 PDF

    marking BA sot-23

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1015 Features • • • • PNP EPITAXIAL Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High Hfe linearity Complement to MBT1815


    Original     		MMBT1015 150mA MBT1815 OT-23 marking BA sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBT1015-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT1015-H  Features • • • • • • • • x • Halogen free available upon request by adding suffix "-HF"


    Original     		MMBT1015-L MMBT1015-H 150mA MMBT1815 OT-23 PDF

    MSD101

    Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT1010LT1 MSD1010T1 FR4 GLASS EPOXY
    Text: LESHAN RADIO COMPANY, LTD. Low Saturation Voltage MMBT1010LT1 MSD1010T1 PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in


    Original     		MMBT1010LT1 MSD1010T1 OT-23 MSD101 PNP Epitaxial Silicon Transistor sot-23 MMBT1010LT1 MSD1010T1 FR4 GLASS EPOXY PDF

    transistor sc 308

    Abstract: MMBT1010LT1 MSD1010T1 SMD310
    Text: Low Saturation Voltage PNP Silicon Driver Transistors MMBT1010LT1 MSD1010T1 ON Semiconductor Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve


    Original     		MMBT1010LT1 MSD1010T1 OT-23 r14525 MMBT1010LT1/D transistor sc 308 MMBT1010LT1 MSD1010T1 SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION 


    Original     		MMBT1015 150mA MMBT1815 MMBT1015G-x-AC3-R MMBT1015G-x-AE3-R MMBT1015G-x-AL3-R MMBT1015G-x-AN3-R MMBT1015G-x-AQ3-R OT-113 OT-23 PDF

    MMBT1815G

    Abstract: transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G


    Original     		MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815G MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815G transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Green L ine MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors M otorola Preferred D e vic e s Part of the GreenLine Portfolio of devices with energy-conserving traits. PNP GENERAL PURPOSE DRIVER


    OCR Scan     		OT-23 MMBT1010LT1 MSD1010T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT1015W PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A The MMBT1015W is designed for use in driver stage of AF amplifier and general purpose amplification. L 3 1 Top View V B S 2 G COLLECTOR


    Original     		MMBT1015W OT-323 MMBT1015W -100mA, -10mA 300us, 01-Jun-2002 PDF

    MMBT3946

    Abstract: MMBT3415 MMBTA20
    Text: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101


    OCR Scan     		MMBT100 O-236 S33jA3Q MMBT3946 MMBT3415 MMBTA20 PDF

    A4Y SOT23

    Abstract: transistor a4y
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y PDF

    c4g TRANSISTOR sot323

    Abstract: c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R c4g TRANSISTOR sot323 c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1815 *Pb-free plating product number: MMBT1015L


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L MMBT1015-x-AC3-6-R MMBT1015L-x-AC3-6-R MMBT1015-x-AE3-6-R MMBT1015L-x-AE3-6-R MMBT1015-x-AN3-6-R MMBT1015L-x-AN3-6-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR


    Original     		MMBT1015 150mA MMBT1815 OT-113 QW-R210-003 PDF

    A4Y SOT23

    Abstract: transistor a4y transistor a4g sot113 NF 723
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION


    Original     		MMBT1015 150mA MMBT1815 MMBT1015L-x-AC3-R MMBT1015G-x-AC3-R MMBT1015L-x-AE3-R MMBT1015G-x-AE3-R MMBT1015L-x-AL3-R MMBT1015G-x-AL3-R MMBT1015L-x-AN3-R A4Y SOT23 transistor a4y transistor a4g sot113 NF 723 PDF

    HF SOT-23

    Abstract: MMBT1015 MMBT1815
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT1815 Features • • • • NPN EPITAXIAL Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complimentary to MMBT1015 SILICON TRANSISTOR


    Original     		MMBT1815 150mA MMBT1015 OT-23 HF SOT-23 MMBT1015 MMBT1815 PDF

    Gate Driver SOT-363 Marking Code G

    Abstract: MSD101
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits. PNP GENERAL PURPOSE DRIVER TRANSISTORS


    Original     		OT-23 Gate Driver SOT-363 Marking Code G MSD101 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT101 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.75 h(FE) Max. Current gain.


    Original     		MMBT101 Freq250M PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT1010LT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).19 @I(C) (A) (Test Condition)100m


    Original     		MMBT1010LT1 PDF

    MMBT1010LT1

    Abstract: MSD1010T1 SMD310 msd101
    Text: MOTOROLA Order this document by MMBT1010LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBT1010LT1 MSD1010T1 Low Saturation Voltage PNP Silicon Driver Transistors Motorola Preferred Devices Part of the GreenLine Portfolio of devices with energy–conserving traits.


    Original     		MMBT1010LT1/D MMBT1010LT1 MSD1010T1 OT-23 MMBT1010LT1/D* MMBT1010LT1 MSD1010T1 SMD310 msd101 PDF