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    MMBR901L Search Results

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    MMBR901L Price and Stock

    Motorola Mobility LLC MMBR901LT1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMBR901LT1 1,240 9
    • 1 -
    • 10 $0.5625
    • 100 $0.3656
    • 1000 $0.18
    • 10000 $0.1575
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    UNKNOWN MMBR901LT1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMBR901LT1 1,999
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    Motorola Semiconductor Products MMBR901LT1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MMBR901LT1 9,067
    • 1 -
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    Quest Components MMBR901LT1 5
    • 1 $0.3
    • 10 $0.3
    • 100 $0.3
    • 1000 $0.3
    • 10000 $0.3
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    MMBR901LT1 49,988
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $0.15
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    MMBR901LT1 992
    • 1 $0.75
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    • 100 $0.75
    • 1000 $0.195
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    MMBR901LT1 2,802
    • 1 $1.25
    • 10 $1.25
    • 100 $1.25
    • 1000 $0.5
    • 10000 $0.4375
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    MMBR901LT1 5,012
    • 1 $1.2645
    • 10 $1.2645
    • 100 $1.2645
    • 1000 $1.2645
    • 10000 $0.3794
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    MMBR901LT1 3,261
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $0.875
    • 10000 $0.75
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    onsemi MMBR901LT1

    Bipolar Junction Transistor, NPN Type, SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MMBR901LT1 22,332
    • 1 $1.2645
    • 10 $1.2645
    • 100 $1.2645
    • 1000 $1.2645
    • 10000 $0.3794
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    MMBR901L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMBR901LT1 Motorola IC = 30 mA SURFACE MOUNTED HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF
    MMBR901LT3 Motorola IC = 30 mA SURFACE MOUNTED HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF

    MMBR901L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MMBR901L Silicon NPN RF Transistor DESCRIPTION • Low Noise • High Power Gain- SOT- 2 3 package G p e = 1 2 . 0 d B T Y P . @ f = 1 GHz &" ^^


    Original     		PDF MMBR901L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBR901LT1，T3 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM :


    Original     		PDF OT-23 MMBR901LT1ï 037TPY 950TPY 550REF 022REF

    mps901

    Abstract: MRF901
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1,

    MMBR901L

    Abstract: motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MMBR901L motorola t3 switch RF NPN POWER TRANSISTOR 2.5 GHZ MMBR901LT1 RF TRANSISTOR 1 WATT

    Untitled

    Abstract: No abstract text available
    Text: MMBR901LT3 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m# Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15


    Original     		PDF MMBR901LT3

    MMBR901

    Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
    Text: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143


    Original     		PDF MMBR901MLT1/MRF9011MLT1 MMBR901LT1/MRF9011LT1 OT23/SOT143 MMBR901 MRF9011LT1 MRF9011MLT1 MMBR901MLT1

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MMBR901LT1/D MMBR901LT1

    11608A

    Abstract: MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MRF9011LT1 MRF9011LT1) 11608A MMBR901LT1 Microlab FXR 7A SF marking 8b sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ SF-11N RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ sf 118 d

    Untitled

    Abstract: No abstract text available
    Text: MMBR901LT1 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)-55þ Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15


    Original     		PDF MMBR901LT1

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF MMBR901LT1/D OT-23 MMBR901LT1

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF MMBR901LT1, MRF9011LT1 MRF9011LT1) OT-23 OT-143 MRF9011LT1 MMBR901LT1

    MPS536

    Abstract: MMBR901L
    Text: MMBR536L See MPS536 MMBR571L (See MPS571) MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR901L The RF Line Die S ource Same as MRF901 N P N S ilic o n H igh Frequency T ra n sisto r . . . designed p rim a rily fo r use in h ig h -g ain , low -n oise , sm a ll-sign a l UHF and


    OCR Scan     		PDF MMBR536L MPS536) MMBR571L MPS571) MMBR901L MRF901 MPS536 MMBR901L

    mmbr901lt1

    Abstract: 75 watt npn switching transistor MARKING 7A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1, T3 NPN Silicon H igh-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF OT-23 MMBR901LT1, mmbr901lt1 75 watt npn switching transistor MARKING 7A sot-23

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239