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    NXP Semiconductors MMA20312BVT1

    IC AMP LTE 1.8GHZ-2.2GHZ 12QFN
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    DigiKey MMA20312BVT1 Cut Tape 842 1
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    MMA20312BVT1 Digi-Reel 842 1
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    Verical MMA20312BVT1 422 5
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    Rochester Electronics MMA20312BVT1 1,349 1
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    EBV Elektronik MMA20312BVT1 54 Weeks 1,000
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    Freescale Semiconductor MMA20312BVT1

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    Bristol Electronics MMA20312BVT1 69
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    MMA20312BVT1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMA20312BVT1 Freescale Semiconductor RF Amplifiers, RF/IF and RFID, IC AMP HBT INGAP/GAAS 12QFN Original PDF

    MMA20312BVT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GRM188R60J106ME47

    Abstract: 37Z6 FR408
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV GRM188R60J106ME47 37Z6 FR408

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV

    FR408

    Abstract: FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS
    Text: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 0, 8/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV FR408 FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMA20312BV Rev. 0, 8/2011 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station


    Original     		PDF MMA20312BV MMA20312BVT1 MMA20312BV

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF