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    MLC 80*50* TRANSISTOR Search Results

    MLC 80*50* TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MLC 80*50* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T250AC-16-4C

    Abstract: transistor c323 Payton T250AC 1N5711 SMD D304 diode 1003 smd resistor UCC25600 llc resonant dc-dc converter payton MF630V
    Text: Reference Design SLUU341B–DECEMBER 2008 – REVISED – MARCH 2009 PR883: A 300-W, Universal Input, Isolated PFC Power Supply for LCD TV Applications Power Management – Power Supply Controllers 1 INTRODUCTION This guide documents a low-profile power supply that is suitable for powering LCD TVs or other flat screen


    Original     		PDF SLUU341B PR883: 24-VDC T250AC-16-4C transistor c323 Payton T250AC 1N5711 SMD D304 diode 1003 smd resistor UCC25600 llc resonant dc-dc converter payton MF630V

    MIC1426

    Abstract: MIC1426CM tl494 motor tsc170 TL494 DS0026 MIC1426CN MIC1427CM MIC1427CN MIC1428CM
    Text: MIC1426/1427/1428 Micrel MIC1426/1427/1428 Dual 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC1426/27/28 are a family of 1.2A dual high-speed drivers. They are ideal for high-volume OEM manufacturers, with latch-up protection, and ESD protection. BiCMOS/DMOS


    Original     		PDF MIC1426/1427/1428 MIC1426/27/28 MIC1426 DS0026, MIC1426CM tl494 motor tsc170 TL494 DS0026 MIC1426CN MIC1427CM MIC1427CN MIC1428CM

    SM-05

    Abstract: mlc avx capacitors cte cte table epoxy substrate g11 epoxy glass
    Text: TECHNICAL INFORMATION PROCESSING GUIDELINES FOR S.M.P.S. MULTILAYER CERAMIC CAPACITORS by John Maxwell and Mark Doty AVX Corporation Olean, NY Abstract: Surface mount technology and high current layout techniques will be used as high frequency switch mode power supplies move to one


    Original     		PDF S-MPGC00M0401-R SM-05 mlc avx capacitors cte cte table epoxy substrate g11 epoxy glass

    cte table epoxy

    Abstract: No abstract text available
    Text: TECHNICAL INFORMATION PROCESSING GUIDELINES FOR S.M.P.S. MULTILAYER CERAMIC CAPACITORS by John Maxwell and Mark Doty AVX Corporation Olean, NY Abstract: Surface mount technology and high current layout techniques will be used as high frequency switch mode power supplies move to one


    Original     		PDF SMP0-539-1501 S-MPGC00M0401-R cte table epoxy

    tl494 mosfet

    Abstract: tl494 motor TC1426 DS0026 TC1426CPA TC1427 TC1427CPA TC1428 TC1428CPA
    Text: TC1426 TC1427 TC1428 1.2A DUAL HIGH-SPEED MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION • Low Cost ■ Latch-Up Protected: Will Withstand 500 mA Reverse Output Current ■ ESD Protected . ±2 kV ■ High Peak Output Current . 1.2A Peak


    Original     		PDF TC1426 TC1427 TC1428 1000pF 38nsec 75nsec TC1426/27/28 tl494 mosfet tl494 motor TC1426 DS0026 TC1426CPA TC1427 TC1427CPA TC1428 TC1428CPA

    tl494 mosfet

    Abstract: tl494 application notes motor control tl494 motor TL494 tc1426cpa TC1427COA SG1526 TC1426/27/28 DS0026 power mosfet driver TC1426
    Text: 1.2A DUAL HIGH-SPEED MOSFET DRIVERS TC1426 TC1426 TC1427 TC1427 TC1428 TC1428 1.2A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • Low Cost ■ Latch-Up Protected: Will Withstand 500 mA Reverse Output Current ■ ESD Protected . ±2 kV


    Original     		PDF TC1426 TC1427 TC1428 1000pF 38nsec 75nsec tl494 mosfet tl494 application notes motor control tl494 motor TL494 tc1426cpa TC1427COA SG1526 TC1426/27/28 DS0026 power mosfet driver TC1426

    ST 9427

    Abstract: 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427
    Text: December 1997 RR-B2A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and


    Original     		PDF 12GHz 27GHz ST 9427 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427

    Flex-OneNAND Samsung

    Abstract: Flex-OneNAND KFG4GH6U4M-DIB6 0060H-0061H samsung 16GB Nand flash KFG4G flexonenand samsung 8GB Nand flash
    Text: Flex-OneNAND4G KFG4GH6x4M-DxBx Flex-OneNAND8G(KFH8GH6x4M-DxBx) Flex-OneNAND16G(KFWAGH6x4M-DxBx) FLASH MEMORY KFG4GH6x4M KFH8GH6x4M KFWAGH6x4M 4Gb Flex-OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF Flex-OneNAND16G 80x11 Flex-OneNAND Samsung Flex-OneNAND KFG4GH6U4M-DIB6 0060H-0061H samsung 16GB Nand flash KFG4G flexonenand samsung 8GB Nand flash

    Flex-OneNAND Samsung

    Abstract: kfh8gh6u4m Samsung 8Gb MLC KFG4GH6Q4M monolithic nand mlc nand flash lsb msb SLC NAND endurance 100k samsung 16GB Nand flash F200H KFG4G
    Text: Flex-OneNAND4G KFG4GH6x4M-DxBx Flex-OneNAND8G(KFH8GH6x4M-DxBx) Flex-OneNAND16G(KFWAGH6x4M-DxBx) FLASH MEMORY KFG4GH6x4M KFH8GH6x4M KFWAGH6x4M 4Gb Flex-OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF Flex-OneNAND16G 80x11 Flex-OneNAND Samsung kfh8gh6u4m Samsung 8Gb MLC KFG4GH6Q4M monolithic nand mlc nand flash lsb msb SLC NAND endurance 100k samsung 16GB Nand flash F200H KFG4G

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


    Original     		PDF K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0

    Flex-OneNAND Samsung

    Abstract: Samsung 8Gb MLC Nand flash Flex-OneNAND SAMSUNG 8gb NAND Flash memory 0295h
    Text: Flex-MuxOneNAND4G KFM4GH6Q4M-DEBx Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) FLASH MEMORY . KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M 4Gb Flex-MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF Flex-MuxOneNAND16G 80x11 Flex-OneNAND Samsung Samsung 8Gb MLC Nand flash Flex-OneNAND SAMSUNG 8gb NAND Flash memory 0295h

    Samsung 8Gb MLC

    Abstract: Flex-OneNAND Samsung KFM4GH6Q4M-DEBx Samsung 8Gb MLC Nand flash samsung 8Gb nand flash SLC NAND endurance 100k years 16gb 16GB Nand flash samsung 16GB Nand flash Flex-OneNAND
    Text: Flex-MuxOneNAND4G KFM4GH6Q4M-DEBx Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx) Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx) FLASH MEMORY . KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M 4Gb Flex-MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF Flex-MuxOneNAND16G 80x11 Samsung 8Gb MLC Flex-OneNAND Samsung KFM4GH6Q4M-DEBx Samsung 8Gb MLC Nand flash samsung 8Gb nand flash SLC NAND endurance 100k years 16gb 16GB Nand flash samsung 16GB Nand flash Flex-OneNAND

    PQMD12

    Abstract: No abstract text available
    Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot


    Original     		PDF DFN1010 OT963 DFN1010B-6 DFN0806 PQMD12

    STM-64

    Abstract: GD16544 GIGA receivers for SDH STM 16
    Text: 10 Gbit/s AGC Amplifier GD19902 an Intel company Preliminary General Description Features The GD19902 device is an amplifier designed for Automatic Gain Control AGC , with high input overload, high gain, intended for use in high bandwidth applications such as 10 Gbit/s STM-64/


    Original     		PDF GD19902 GD19902 STM-64/ OC-192 GD16544) STM-64 GD16544 GIGA receivers for SDH STM 16

    GD19902-68BA

    Abstract: GD19902 GD16544 STM-64
    Text: 10 Gbit/s AGC Amplifier GD19902 Preliminary General Description Features The GD19902 device is an amplifier designed for Automatic Gain Control AGC , with high input overload, high gain, intended for use in high bandwidth applications such as 10 Gbit/s STM-64/


    Original     		PDF GD19902 GD19902 GD16544) DK-2740 GD19902-68BA GD16544 STM-64

    L504XXX

    Abstract: transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit
    Text: March 1996 RR-B1A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and July 1,


    Original     		PDF 12GHz 27GHz L504XXX transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit

    MULTILAYER VARISTOR FILTERS

    Abstract: varistor symbol SIEMENS LIGHTNING ARRESTORS varistor testing VARISTOR CV VARISTOR variable resistor varistor documentation IC121 IEC-1000-4-2 Pi Tubular ceramic capacitor
    Text: Multilayer Varistor Filters Truly Multi-functional Passive Components It is forecast that component densities for hand held wireless products will increase from today's figure of 2 2 14/cm to about 54/cm within a five year time span. Passive components form 80% of the total present on


    Original     		PDF 14/cm 54/cm MULTILAYER VARISTOR FILTERS varistor symbol SIEMENS LIGHTNING ARRESTORS varistor testing VARISTOR CV VARISTOR variable resistor varistor documentation IC121 IEC-1000-4-2 Pi Tubular ceramic capacitor

    tl494 application notes motor control

    Abstract: tc1426 capacitor wima mks 4 0.1uF tc1426cpa tc1427 TC1427CPA TC4428 DS0026 TC1426COA TC1427COA
    Text: M TC1426/TC1427/TC1428 1.2A Dual High-Speed MOSFET Drivers Package Type Features • Low Cost • Latch-Up Protected: Will Withstand 500mA Reverse Output Current • ESD Protected ±2kV • High Peak Output Current: 1.2A • Wide Operating Range - 4.5V to 16V


    Original     		PDF TC1426/TC1427/TC1428 500mA 1000pF 38nsec 75nsec TC1426CPA TC1428CPA TC1427CPA D-81739 DS21393B-page tl494 application notes motor control tc1426 capacitor wima mks 4 0.1uF tc1426cpa tc1427 TC1427CPA TC4428 DS0026 TC1426COA TC1427COA

    THC3501

    Abstract: THC3564 BBC DSA 22 THC3694
    Text: S P R A G U E / S E N IC O N D ^ I GROUP D • ÛS13Û50 GQOBSbü ' 8514019 SPRAGUE! SEMICONDS / I C S 930 ' 03560J Y 7 ■ ' 1- | - —, . -■ —- — - BIPOLAR TRANSISTOR CHIPS ' 1 iI II NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan     		PDF 03560J) THC3414 THC3415 THC3416 THC3417 THC3444 THC3498 THC3499 THC3500 THC3501 THC3564 BBC DSA 22 THC3694

    TL494 TRANSFORMER DESIGN NOTES

    Abstract: No abstract text available
    Text: leluom Semiconductor, Inc. TC1426 TC1427 TC1428 1.2A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ The TC1426/27/28 are a family of 1,2A dual high- speed drivers. CMOS fabrication is used for low power consump­ tion and high efficiency.


    OCR Scan     		PDF TC1426 TC1427 TC1428 1000pF 38nsec 75nsec TL494 TRANSFORMER DESIGN NOTES

    tl494 motor

    Abstract: MIC426 MKS wima tsc170 SG1526 dc motor speed control tl494 MIC1426CM DDD5131 DS0026 MIC1426
    Text: M IC I426/1427/1428 M IC I 4 2 6 /1 4 2 7 /1 4 2 8 Dual 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC1426/27/28 are a family of 1.2A dual high-speed drivers. They are ideal for high-volume OEM manufacturers,


    OCR Scan     		PDF MIC1426/1427/1428 MIC1426/27/28 MIC1426 DS0026, 0D0n40 tl494 motor MIC426 MKS wima tsc170 SG1526 dc motor speed control tl494 MIC1426CM DDD5131 DS0026

    MIC1427CM

    Abstract: No abstract text available
    Text: M IC 1 4 2 6 /1 4 2 7 / 1 4 2 8 1.2A Dual High-Speed MOSFET Drivers Bipolar/CMOS/DMOS Process General Description Features Low Cost Latch-Up Protected: Will Withstand 500mA Reverse Output Current ESD Protected. ±2kV


    OCR Scan     		PDF 500mA 10OOpF MIC1427CM

    ic tl494 mosfet

    Abstract: TL494 PWM motor TL494 MOSFET KV MLC transistor tl494 motor
    Text: leluom w TC1426 TC1427 TC1428 Semiconductor, Inc. ~ 1.2A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ The TC1426/27/28 are a family of 1.2A dual high-speed drivers. They are ideal for high-volume OEM applications, with latch-up protection, ESD protection, and a proprietary


    OCR Scan     		PDF TC1426 TC1427 TC1428 ic tl494 mosfet TL494 PWM motor TL494 MOSFET KV MLC transistor tl494 motor

    Untitled

    Abstract: No abstract text available
    Text: April 1998 FAIRCHILD MlC O N D U C T O R FDP603AL / FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF FDP603AL FDB603AL FDPG03AL