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    MJE3055 TRANSISTOR Search Results

    MJE3055 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE3055 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor MJE3055

    Abstract: MJE3055 mje3055 transistor ic 400ma, npn transistor
    Text: MJE3055 MJE3055 TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 10 A Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF MJE3055 O-220 200mA, 400mA 500mA transistor MJE3055 MJE3055 mje3055 transistor ic 400ma, npn transistor

    transistor MJE3055

    Abstract: MJE3055 mje3055 transistor MJE3055 TO-225
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 MJE3055 200mA, tp300S, transistor MJE3055 MJE3055 mje3055 transistor MJE3055 TO-225

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-220 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 MJE3055 200mA,

    complementary npn-pnp power transistors

    Abstract: mje3055 mje2955 data mje3055 data M*2955 MJE2955
    Text: MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 APPLICATIONS GENERAL PURPOSE SWITCHING AND


    Original     		PDF MJD2955 MJD3055 O-252 MJE2955 MJE3055 MJD3055 complementary npn-pnp power transistors mje3055 mje2955 data mje3055 data M*2955

    mje3055

    Abstract: mje3055 data transistor MJE3055 MJD3055
    Text: MJD3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055


    Original     		PDF MJD3055 MJE3055 500mA mje3055 mje3055 data transistor MJE3055 MJD3055

    MJE3055

    Abstract: transistor MJE3055 GG1C
    Text: MJE3055 Plastic-Encapsulate Power Transistors 1 1. BASE 2 3 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Total Device Disspation TC=25 C


    Original     		PDF MJE3055 O-220 300us, O-220 MJE3055 transistor MJE3055 GG1C

    complementary npn-pnp power transistors

    Abstract: MJE2955 mje3055 data MJD2955 MJD3055 MJE3055
    Text: MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND


    Original     		PDF MJD2955 MJD3055 O-252 MJE2955 MJE3055 complementary npn-pnp power transistors mje3055 data MJD2955 MJD3055 MJE3055

    MJE3055

    Abstract: transistor MJE3055 mje3055 transistor MJE3055 TO-225
    Text: MJE3055 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 1 Features — 2 3 GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage


    Original     		PDF MJE3055 O-220 O-220 200mA, tp300S, transistor MJE3055 mje3055 transistor MJE3055 TO-225

    MJE3055

    Abstract: transistor MJE3055 500KHZ MJD3055
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 TO-252-2L FEATURES z Designed for general purpose amplifier and low speed switching applications . 123 1.BASE z Electrically simiar to MJE3055.


    Original     		PDF O-251/TO-252 MJD3055 O-251 O-252-2L MJE3055. 500KHZ MJE3055 transistor MJE3055 500KHZ MJD3055

    MJE3055 TO-225

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 MJE3055 Plastic-Encapsulate Transistors TO-220 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 MJE3055 200mA, MJE3055 TO-225

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE 2.COLLECTOR z Electrically Simiar to MJE3055


    Original     		PDF O-251 MJD3055 O-251 MJE3055 500KHZ

    mje3055 data

    Abstract: MJD3055 MJE2955 MJD2955 MJE2955 datasheet M*2955 MJE2955 power amplifier circuit mje3055 transistor MJE3055 MJE305
    Text: MJD2955 MJD3055  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ STM PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND


    Original     		PDF MJD2955 MJD3055 O-252 MJE2955 MJE3055 mje3055 data MJD3055 MJD2955 MJE2955 datasheet M*2955 MJE2955 power amplifier circuit mje3055 transistor MJE3055 MJE305

    mje3055

    Abstract: transistor MJE3055
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors MJE3055 TRANSISTOR NPN TO-220 1. BASE FEATURES Power dissipation PCM: 2. COLLECTOR 2 W (Tamb=25℃) 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70


    Original     		PDF O-220 MJE3055 O-220 200mA, 400mA 500mA mje3055 transistor MJE3055

    transistor MJE3055

    Abstract: MJE3055
    Text: MJD3055 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-251/TO-252-2L MJD3055 O-251 MJE3055. O-252-2L 500KHZ transistor MJE3055 MJE3055

    Untitled

    Abstract: No abstract text available
    Text: MJE3055 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF MJE3055

    MJE3055

    Abstract: transistor MJE3055 20100G
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJE3055 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF MJE3055 -55OC O-220 MJE3055 transistor MJE3055 20100G

    MJE3055

    Abstract: 2 N MJE3055
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJE3055 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF MJE3055 -55OC O-220 200mAdc, MJE3055 2 N MJE3055

    mje3055

    Abstract: transistor MJE3055 2 N MJE3055
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJE3055 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF MJE3055 -55OC O-220 mje3055 transistor MJE3055 2 N MJE3055

    complementary npn-pnp power transistors

    Abstract: mje3055 MJE2955
    Text: / = 7 SGS-THOMSON Ä 7 # HôgœiLiÊTTlOiOigl MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4") . ELECTRICAL SIMILAR TO MJE2955 AND MJE3055


    OCR Scan     		PDF MJD2955 MJD3055 O-252 MJE2955 MJE3055 MJD3055 GC64540 complementary npn-pnp power transistors

    Untitled

    Abstract: No abstract text available
    Text: MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS . STM PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) . ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 APPLICATIONS . GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS


    OCR Scan     		PDF MJD2955 MJD3055 O-252 MJE2955 MJE3055 O-252

    Untitled

    Abstract: No abstract text available
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed lor Surface Mount Applications No Suffix Straight Lead (I.PACK, I " Suffix) Electrically Similar to Popular MJE3055


    OCR Scan     		PDF KSH3055 MJE3055 500mA 53CXVS,

    mje3055

    Abstract: DPAC
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK Lead Formed for Surface Mount Applications No Suffix Straight Lead (I.PACK, I " Suffix) Electrically Similar to Popular MJE3055


    OCR Scan     		PDF KSH3055 MJE3055 500mA 500mA 500KHz DPAC

    MJE3055

    Abstract: KSH3055 Q02S transistor MJE3055 MJE3055 TO-225
    Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I.PACK, I ” Suffix) • Electrically Similar to Popular MJE3055


    OCR Scan     		PDF KSH3055 MJE3055 500mA 500mA 500KHz Q02S572 7tb4142 MJE3055 Q02S transistor MJE3055 MJE3055 TO-225

    mje3055

    Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
    Text: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —


    OCR Scan     		PDF MJE3055 MJE3055K MJE2955, MJE2955K MJE3055 MJE3055K MJE30S6, TC-28Â mje3055 data 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA