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    MJE13003 TRANSISTOR Search Results

    MJE13003 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE13003 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009 PDF

    MJE13003

    Abstract: transistor mje13003 NPN Transistor 1.5A 700V MJE13003 transistor
    Text: DATA SHEET MJE13003 NPN SILICON POWER TRANSISTOR TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13003 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted SYMBOL Collector-Emitter Voltage


    Original     		MJE13003 O-126 100kHz O-126 transistor mje13003 NPN Transistor 1.5A 700V MJE13003 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MJE13003 w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: TC=25°C unless otherwise noted


    Original     		MJE13003 MJE13003 O-126 23-October PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES 2009. 8. 19 Revision No : 10 1/2


    Original     		MJE13003 PDF

    MJE13003

    Abstract: MJE-13003
    Text: SI SEMICONDUCTORS CO.,LTD. Product specification NPN SILICON POWER TRANSISTOR ●FEATURES: MJE13003 •HIGH VOLTAGE CAPABILITY ■HIGH SWITCHING SPEED ■WIDE SOA ● APPLICATIONS: ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■COMPACT FLUORESCENT LAMP


    Original     		MJE13003 CTO-126/SOT-82 O-126 OT-82 MJE13003 MJE-13003 PDF

    mje13003 equivalent

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 mje13003 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    2N2222 transistor output curve

    Abstract: UTCMJE13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 2N2222 transistor output curve UTCMJE13003 MJE13003 transistor PDF

    MJE13003

    Abstract: MJE-13003 equivalent mje13003 MJE130 N-P-N SILICON POWER TRANSISTORS TO-126
    Text: Inchange Semiconductor Product Specification MJE13003 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/


    Original     		MJE13003 O-126 MJE13003 MJE-13003 equivalent mje13003 MJE130 N-P-N SILICON POWER TRANSISTORS TO-126 PDF

    MJE13002

    Abstract: mje13003 MJE-13002 MJE13002 transistor MJE13002MJE13003
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits


    Original     		ISO/TS16949 MJE13002 MJE13003 O-126 C-120 MJE13002 13003Rev090502 mje13003 MJE-13002 MJE13002 transistor MJE13002MJE13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    mje13003

    Abstract: MJE-13003 mje13002 npn transistors 700V 1A equivalent mje13003 MJE-13002 of mje13003
    Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


    Original     		MJE13002 MJE13003 100oC 100oC O-126 25Adc 25Adc, mje13003 MJE-13003 npn transistors 700V 1A equivalent mje13003 MJE-13002 of mje13003 PDF

    mje13003

    Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-126 QW-R204-004 mje13003 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features PDF

    mje13002

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and


    Original     		MJE13002 MJE13003 O-126 C-120 MJE13002 13003Rev090502 PDF

    MJE13003

    Abstract: mje13002 MJE-13003 MJE-13002 transistor mje13003 equivalent mje13003
    Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


    Original     		MJE13002 MJE13003 100oC 100oC O-225AA 25Adc 25Adc, MJE13003 MJE-13003 MJE-13002 transistor mje13003 equivalent mje13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-126 QW-R204-004 PDF

    MJE130

    Abstract: transistor mje13003 MJE13003 transistor MJE13003 Vcev700V
    Text: DC COMPONENTS CO., LTD. R MJE13003 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126 .304 7.72 .285(7.52)


    Original     		MJE13003 O-126 MJE130 transistor mje13003 MJE13003 transistor MJE13003 Vcev700V PDF

    mje13003

    Abstract: MJE-13003 mje13002
    Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


    Original     		MJE13002 MJE13003 100oC 100oC O-126 25Adc 25Adc, mje13003 MJE-13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-126 MJE13003L QW-R204-004 PDF

    MJE13003

    Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 O-220 290ns MJE13003L MJE13003-x-TA3-F-T QW-R203-017 MJE13003 MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222 PDF