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    MJE13003 EQUIVALENT Search Results

    MJE13003 EQUIVALENT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    MJE13003 EQUIVALENT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009

    mje13003 equivalent

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062 mje13003 equivalent

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062

    2N2222 transistor output curve

    Abstract: UTCMJE13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-220 QW-R203-017 2N2222 transistor output curve UTCMJE13003 MJE13003 transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-220 QW-R203-017

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062

    equivalent transistor 2N2905

    Abstract: UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 QW-R201-062 equivalent transistor 2N2905 UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core

    mje13003

    Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-126 QW-R204-004 mje13003 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-220 QW-R203-017

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-126 QW-R204-004

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-126 MJE13003L QW-R204-004

    MJE13003

    Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 O-220 290ns MJE13003L MJE13003-x-TA3-F-T QW-R203-017 MJE13003 MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222

    MJE13003 transistor

    Abstract: equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns O-126 MJE13003L MJE13003-x-T60-F-Kt QW-R204-004 MJE13003 transistor equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a

    equivalent mje13003

    Abstract: mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-x-x-T6C-A-K QW-R204-004 equivalent mje13003 mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222

    equivalent mje13003

    Abstract: mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L MJE13003G MJE13003L-x-T60-A-K MJE13003L-x-T60-F-lues QW-R204-004 equivalent mje13003 mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92

    2n2222 transistor pin b c e

    Abstract: DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003 290ns MJE13003L MJE13003G QW-R204-004 2n2222 transistor pin b c e DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l

    pin diagram mje13003

    Abstract: mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13003 r14525 MJE13003/D pin diagram mje13003 mje13003 equivalent equivalent mje13003 transistor 2N222 2n222 TRANSISTOR 1N4933 1N5820 2N222 2N2905 MJE13003

    mje13003 equivalent

    Abstract: MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905
    Text: MOTOROLA Order this document by MJE13002/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE13002 * MJE13003 *  Data Sheet SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS


    Original     		PDF MJE13002/D* MJE13002/D mje13003 equivalent MJE13002 equivalent equivalent mje13003 MJE13002 2N2222 NPN Transistor features 2N2905 MOTOROLA MJE13003 1N4933 1N5820 2N2905

    transistor 13003G

    Abstract: 13003G je13003 JE13003G JE 13003 13003G TRANSISTOR 2n222 TRANSISTOR pin diagram mje13003 equivalent mje13003 je13003 TRANSISTOR
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13003 MJE13003/D transistor 13003G 13003G je13003 JE13003G JE 13003 13003G TRANSISTOR 2n222 TRANSISTOR pin diagram mje13003 equivalent mje13003 je13003 TRANSISTOR

    transistor 13003G

    Abstract: mje13003 equivalent 13003G MJE13003 transistor+13003G
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13003 MJE13003/D transistor 13003G mje13003 equivalent 13003G MJE13003 transistor+13003G

    mje13003 equivalent

    Abstract: pin diagram mje13003 MJE13003 equivalent mje13003 2n222 TRANSISTOR MJE13003D 1N4933 1N5820 2N222 2N2905
    Text: MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13003 r14525 MJE13003/D mje13003 equivalent pin diagram mje13003 MJE13003 equivalent mje13003 2n222 TRANSISTOR MJE13003D 1N4933 1N5820 2N222 2N2905

    MJE13003 TO-92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		PDF MJE13003 290ns MJE13003L QW-R201-062 MJE13003 TO-92