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    onsemi MJE182G

    TRANS NPN 80V 3A TO126
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    DigiKey MJE182G Bulk 15,313 1
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    • 10000 $0.27396
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    Mouser Electronics MJE182G 6,255
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    Verical MJE182G 550 23
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    Newark MJE182G Bulk 17,425 1
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    MJE182G Bulk 13,513 1
    • 1 $0.876
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    TME MJE182G 111 1
    • 1 $0.779
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    Avnet Asia MJE182G 14 Weeks 3,500
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    Chip1Stop MJE182G Bulk 8
    • 1 $0.577
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    EBV Elektronik MJE182G 16 Weeks 500
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    New Advantage Corporation MJE182G 4,000 1
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    Win Source Electronics MJE182G 25,279
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    onsemi MJE18008G

    TRANS NPN 450V 8A TO220
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    DigiKey MJE18008G Tube 2,479 1
    • 1 $2.33
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    Mouser Electronics MJE18008G 3,474
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    Verical MJE18008G 632 6
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    MJE18008G 17 11
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    • 100 $0.551
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    Arrow Electronics MJE18008G 632 14 Weeks 1
    • 1 $2.1567
    • 10 $1.7658
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    MJE18008G 350 1
    • 1 $1.3166
    • 10 $1.2004
    • 100 $1.0958
    • 1000 $0.8601
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    MJE18008G 17 1
    • 1 $0.551
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    RS MJE18008G Bulk 5
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    EBV Elektronik MJE18008G 16 Weeks 50
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    onsemi MJE181STU

    TRANS NPN 60V 3A TO126-3
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    DigiKey MJE181STU Tube 1,880 1
    • 1 $0.58
    • 10 $0.502
    • 100 $0.3472
    • 1000 $0.29014
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    Flip Electronics MJE181STU 2,441
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    Infineon Technologies AG CY9AF312LPMC1-G-MJE1

    IC MM MCU 64LQFP
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    DigiKey CY9AF312LPMC1-G-MJE1 Tray 1,600 1
    • 1 $8.82
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    • 1000 $5.00404
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    Rochester Electronics CY9AF312LPMC1-G-MJE1 2,950 1
    • 1 $5.35
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    • 100 $5.03
    • 1000 $4.55
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    onsemi MJE170G

    TRANS PNP 40V 3A TO126
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    DigiKey MJE170G Bulk 1,322 1
    • 1 $0.86
    • 10 $0.745
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    Avnet Americas MJE170G Bulk 10 Weeks, 1 Days 1
    • 1 $0.377
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    MJE170G Bulk 7 Weeks 2,500
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    • 10000 $0.3178
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    Mouser Electronics MJE170G 841
    • 1 $0.81
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    • 100 $0.513
    • 1000 $0.325
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    Verical MJE170G 266 23
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    • 10000 $0.2803
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    Newark MJE170G Bulk 11 1
    • 1 $0.924
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    Rochester Electronics MJE170G 19,617 1
    • 1 $0.331
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    Ameya Holding Limited MJE170G 7,500
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    MJE1 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJE10000 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE10001 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE101 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJE101 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJE101 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJE101 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE101 Unknown Cross Reference Datasheet Scan PDF
    MJE102 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJE102 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE102 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJE102 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJE102 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJE102 Unknown Cross Reference Datasheet Scan PDF
    MJE103 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJE103 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJE103 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJE103 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    MJE1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE1320

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220 package ・High voltage ・Low collector saturation voltage APPLICATIONS ・For high-voltage ,power switching in inductive circuits and line operated


    Original     		PDF MJE1320 O-220 MJE1320

    mje13009g

    Abstract: MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D
    Text: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13009G MJE13009/D MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D

    to225a

    Abstract: to225aa TO-225AA to225
    Text: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −


    Original     		PDF MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170/180 MJE180 to225a to225aa TO-225AA to225

    MJE18006

    Abstract: IC13A
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS


    Original     		PDF MJE18006 O-220C Cycle10% MJE18006 IC13A

    MJE13003K

    Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		PDF MJE13003K 290ns MJE13003KL-x-x-T60-K MJE13003KG-x-x-T60-K MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-Tues QW-R223-006 MJE13003K Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V

    pswt

    Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 pswt MJE13003 TO-92 NPN Transistor 1.5A 700V

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent

    MJE13009

    Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such


    Original     		PDF MJE13009 MJE13009 QW-R203-024 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent

    MJE13003D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


    Original     		PDF MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d

    mje13003

    Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		PDF MJE13003 O-126 QW-R204-004 mje13003 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    Original     		PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    MJE15034G

    Abstract: MJE15035G MJE15034 MJE15035 mje1503x 160-100MS
    Text: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers.


    Original     		PDF MJE15034 MJE15035 O-220, MJE15034, MJE15035 O-220AB MJE15034/D MJE15034G MJE15035G mje1503x 160-100MS

    MJE13004

    Abstract: 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130
    Text: MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF MJE13004/13005 O-220 MJE13004 MJE13005 MJE13004 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130

    221D

    Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art


    Original     		PDF MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105

    *E13009F

    Abstract: MJE13009F
    Text: MJE13009F MJE13009F High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF MJE13009F O-220F 25ner *E13009F MJE13009F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005-K QW-R203-045

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B


    Original     		PDF MJE13001-P MJE13001L-P-x-T92-B MJE13001G-P-x-T92-B MJE13001L-P-x-T92-K MJE13001G-P-x-T92-K MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K QW-R201-088

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		PDF MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		PDF MJE13009-P MJE13009-P QW-R223-008,

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Text: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


    OCR Scan     		PDF 2SC3039 MJE13005 T1P49 MJE30SST TIP31A T1P41A TIP120 CIL4006 BD211 BD243 T1P122 T1P41C t1p41 T1P31 2SD880Y 2SD88D 2N529B