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    MJE 350 PNP POWER TRANSISTOR Search Results

    MJE 350 PNP POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE 350 PNP POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor mje 350

    Abstract: transistor mje mje 350 mje 340
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 CEN TO126 MARKING: CEN 350 Designed For Use Line - Operated Applications Such As Low


    Original     		PDF C-120 transistor mje 350 transistor mje mje 350 mje 340

    MJE 340 transistor

    Abstract: Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC MEDIUM POWER SILICON TRANSISTOR MJE 350 TO 126 Designed For Use Line - Operated Applications Such As Low


    Original     		PDF C-120 MJE 340 transistor Power Transistors TO-126 Case mje 31 c MJE 350 PNP power transistor transistor mje 350 300V regulator lic datasheet MJE-350 PNP POWER TRANSISTOR SOT-32 TO 126

    mpsh81 model

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model

    PN4258

    Abstract: IC NE 556 MJE 350 PNP power transistor MMBT4258
    Text: PN4258 MMBT4258 C E C B TO-92 SOT-23 E B Mark: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4258 MMBT4258 OT-23 PN4258 IC NE 556 MJE 350 PNP power transistor MMBT4258

    80500 TRANSISTOR

    Abstract: Vo 80500 TRANSISTOR astec custom power micron fuse resistors Widlar 450FF Bipolar Power Transistor Data Astec Semiconductor 1fa MARKING AS1700-NPN
    Text: AS17xx Semicustom Bipolar Array Features Description Size single tile • 87 x 75 mils Expandability of array (to 2 or 4 tiles) The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is


    Original     		PDF AS17xx AS17xx 80500 TRANSISTOR Vo 80500 TRANSISTOR astec custom power micron fuse resistors Widlar 450FF Bipolar Power Transistor Data Astec Semiconductor 1fa MARKING AS1700-NPN

    Untitled

    Abstract: No abstract text available
    Text: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS63 OT-23

    bf91

    Abstract: No abstract text available
    Text: MMBTA56 PZTA56 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 2G B E C MPSA56 / MMBTA56 / PZTA56 MPSA56 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*


    Original     		PDF MPSA56 MMBTA56 PZTA56 MPSA56 MMBTA56 OT-23 OT-223 bf91

    Untitled

    Abstract: No abstract text available
    Text: PN4258 / MMBT4258 MMBT4258 PN4258 C E C B TO-92 SOT-23 E B Mark: 78 PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF PN4258 MMBT4258 PN4258 OT-23

    Untitled

    Abstract: No abstract text available
    Text: FMBA56 FMBA56 C2 E1 C1 pin #1 B1 B2 E2 SuperSOTä-6 Mark: .2G Dot denotes pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*


    Original     		PDF FMBA56

    Untitled

    Abstract: No abstract text available
    Text: MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 PZTA92 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2D B E C PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 OT-223

    K 3677

    Abstract: No abstract text available
    Text: BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSR18A OT-23 K 3677

    2N5401 fairchild

    Abstract: 2N5401 SOT-23
    Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*


    Original     		PDF 2N5401 MMBT5401 2N5401 OT-23 OT-23 2N5401 fairchild 2N5401 SOT-23

    3246 SOT23

    Abstract: No abstract text available
    Text: BCW68G BCW68G C E SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BCW68G OT-23 -10mA 200ns 3246 SOT23

    Untitled

    Abstract: No abstract text available
    Text: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BSS63 OT-23

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    pn4258

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies • « » lEiMSOONPUaTOR > PN4258 MMBT4258 M ark: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings


    OCR Scan     		PDF PN4258 MMBT4258 PN4258

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    PN4258

    Abstract: process 65
    Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*


    OCR Scan     		PDF PN4258 MMBT4258 PN4258 D040b process 65

    80500 TRANSISTOR

    Abstract: hLB 124 transistor astec application note "dual collector" schematic astec power supply Astec Semiconductor
    Text: <////> AS17xx ASTEC Semicustom Bipolar Array Features Description Size single tile The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is


    OCR Scan     		PDF AS17xx AS17xx 80500 TRANSISTOR hLB 124 transistor astec application note "dual collector" schematic astec power supply Astec Semiconductor

    80500 TRANSISTOR

    Abstract: HE 80500 1fa MARKING HE 80500 TRANSISTOR
    Text: < M /> AS17XX ASTEC Semicustom Bipolar Array F e a tu re s D escription Size single tile The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is


    OCR Scan     		PDF AS17XX AS17xx 80500 TRANSISTOR HE 80500 1fa MARKING HE 80500 TRANSISTOR

    Astec Semiconductor

    Abstract: No abstract text available
    Text: < AS17XX ////> ASTEC Semicustom Bipolar Array Features Description Size single tile The AS 17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is


    OCR Scan     		PDF AS17XX AS17xx Astec Semiconductor

    PN4258

    Abstract: MMBT4258
    Text: PN4258 I MMBT4258 & D iscrete P O W ER & S ig n a l Technologies National Semi c onduc t or ' " MMBT4258 PN4258 SOT-23 B M a rt: 78 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65.


    OCR Scan     		PDF PN4258 MMBT4258 OT-23 PN4258 MMBT4258

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF