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    onsemi MJ11028G

    TRANS NPN DARL 60V 50A TO204
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    onsemi MJ11015G

    TRANS PNP DARL 120V 30A TO204
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    onsemi MJ11021G

    TRANS PNP DARL 250V 15A TO204
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    DigiKey MJ11021G Tray 382 1
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    onsemi MJ11022G

    TRANS NPN DARL 250V 15A TO204
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    DigiKey MJ11022G Tray 139 1
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    onsemi MJ11033G

    TRANS PNP DARL 120V 50A TO204
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    DigiKey MJ11033G Tray 43 1
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    MJ11 Datasheets (236)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ1100FE-R52 Ohmite Resistors - Through Hole Resistors - RES 110 OHM 1/8W 1% AXIAL Original PDF
    MJ11011 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11011 Wing Shing Computer Components PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11011 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11011 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11011 Mospec Complementary Silicon Power Darlington Transistor Scan PDF
    MJ11011 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11011 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11011 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ11011 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ11011 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ11011 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ11011 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ11012 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11012 Motorola 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS Original PDF
    MJ11012 On Semiconductor High-Current Complementary Silicon Transistors Original PDF
    MJ11012 Wing Shing Computer Components NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11012 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11012 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11012 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    ...

    MJ11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    inverters

    Abstract: MJ11017
    Text: PNP MJ11017 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original
    PDF MJ11017 -150V inverters MJ11017

    npn DARLINGTON 10A

    Abstract: MJ11018
    Text: NPN MJ11018 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original
    PDF MJ11018 npn DARLINGTON 10A MJ11018

    MJ11033

    Abstract: No abstract text available
    Text: PNP MJ11033 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original
    PDF MJ11033 -120V MJ11033

    MJ11032

    Abstract: MJ110xx MJ11028-29 Transistor power amp transistors mj11033 TRANSISTOR MJ11028 and/transistor MJ11032
    Text: NPN MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033 High−Current Complementary Silicon Power Transistors http://onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − • • •


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/29 MJ11030 MJ11032/33 MJ11032 MJ110xx MJ11028-29 Transistor power amp transistors TRANSISTOR MJ11028 and/transistor MJ11032

    Darlington 8A

    Abstract: npn DARLINGTON 10A MJ11022
    Text: NPN MJ11022 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


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    PDF MJ11022 Darlington 8A npn DARLINGTON 10A MJ11022

    MJ11033G

    Abstract: MJ11028-29 Transistor transistor mj11028 equivalent 100 amp npn darlington power transistors COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS IC 204 MJ11032 MJ11032G MJ11028 MJ11029
    Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High−Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/D MJ11033G MJ11028-29 Transistor transistor mj11028 equivalent 100 amp npn darlington power transistors COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS IC 204 MJ11032 MJ11032G MJ11028 MJ11029

    Untitled

    Abstract: No abstract text available
    Text: MJ11013 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11013 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11031 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11031 O204AE) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11031 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11031 O204AE) 1-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11016 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11016 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11013 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11013 O204AA) 18-Jun-02

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


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    PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T

    MJ11021

    Abstract: 1N5825 MJ11022 MSD6100
    Text: ON Semiconductort PNP MJ11021 * Complementary Darlington Silicon Power Transistors NPN MJ11022 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — • • • •


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    PDF MJ11021 MJ11022 MJ11022, r14525 MJ11021/D MJ11021 1N5825 MJ11022 MSD6100

    MJ11015G

    Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


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    PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11015, MJ11015G MJ11016G mj110156 MJ11015 MJ11012 MJ11012G T172 MJ1101x

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


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    PDF MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MJ11011 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200


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    PDF MJ11011

    Untitled

    Abstract: No abstract text available
    Text: MJ11028 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    PDF MJ11028

    Untitled

    Abstract: No abstract text available
    Text: MJ11017 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400


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    PDF MJ11017 time500n

    TRANSISTOR MJ11028

    Abstract: transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11029


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    PDF MJ11029 250mA 500mA TRANSISTOR MJ11028 transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029

    MJ11016

    Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015
    Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


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    PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015

    MJ11033G

    Abstract: MJ11032 MJ11028-29 Transistor MJ11029 MJ11032G MJ11028 TRANSISTOR MJ11028 transistor MJ11032 MJ11030 MJ11029G
    Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/29 MJ11030 MJ11032/33 MJ11033G MJ11032 MJ11028-29 Transistor MJ11029 MJ11032G MJ11028 TRANSISTOR MJ11028 transistor MJ11032 MJ11030 MJ11029G

    transistor mj11028 equivalent

    Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
    Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


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    PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 TEMPJ11033 100mA transistor mj11028 equivalent MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031

    MJ11021

    Abstract: mj11011 MJ11017 MJ11018 MJ11019 MJ11020 MJ11022 transistor revers characteristic transistor MJ11020
    Text: ÆàMOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP NPN MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 .designed for use as general purpose amplifiers,low frequency switching and motor control applications. FEATURES: * High Gain Darlington Performance


    OCR Scan
    PDF MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 MJ11020 mj11011 MJ11018 MJ11022 transistor revers characteristic transistor MJ11020

    MJ11017

    Abstract: darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MJ11018 MJ11022 MSD6100 transistor pnp 3015
    Text: MOTOROLA Order this document by MJ11017/D SEMICONDUCTOR TECHNICAL DATA PNP M J11017 Com plem entary Darlington Silicon Power Transistors M J1 1 021* NPN . . . d e sig ned fo r use as ge ne ral pu rpo se am plifiers, low fre q u e n cy sw itch ing and m otor con tro l applications.


    OCR Scan
    PDF MJ11017/D MJ11018, MJ11022, MJ11017 MJ11021 MJ11018 MJ11022 MJ11022 darlington power transistor mj11021 MJ11021 Motorola semiconductor mj11018 1N5825 MSD6100 transistor pnp 3015