semikron skiip 24 nab 125 t 12
Abstract: miniskiip 29 skiip 32 nab 12 t 18 skiip 32 ac skiip 32 nab 125 t 12
Text: SKiiP 34NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP 3 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections
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34NAB12T4V1
34NAB12T4V1
semikron skiip 24 nab 125 t 12
miniskiip 29
skiip 32 nab 12 t 18
skiip 32 ac
skiip 32 nab 125 t 12
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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IRF 042
Abstract: IRG4BC20UDPBF
Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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4909A
IRG4BC20UDPbF
O-220AB
IRF 042
IRG4BC20UDPBF
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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Untitled
Abstract: No abstract text available
Text: PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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-91752A
IRG4IBC20UD
O-220
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Untitled
Abstract: No abstract text available
Text: PD -94917A IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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-94917A
IRG4IBC20UDPbF
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -94917A IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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-94917A
IRG4IBC20UDPbF
O-220
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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4909A
IRG4BC20UDPbF
O-220AB
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IRGBC30MD2
Abstract: No abstract text available
Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC30MD2
10kHz)
O-220AB
C-364
IRGBC30MD2
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Untitled
Abstract: No abstract text available
Text: APTM100UM45DAG Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Application S D G DK S Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
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transistor c373
Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380 o
transistor c380
AN-994
IRGBC30MD2-S
SMD-220
C380 ge
Tx/c380 transistor
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Untitled
Abstract: No abstract text available
Text: PD -94917 IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4IBC20UDPbF
O-220
O-22F
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transistor c373
Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
Text: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380
transistor c380 o
AN-994
IRGBC30MD2-S
SMD-220
transistor c374
C374
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IRGPC30MD2
Abstract: No abstract text available
Text: PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC30MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IRGPC30MD2
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APT0502
Abstract: APT0601 APTM100UM45FAG dk qg
Text: APTM100UM45FAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode
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APTM100UM45FAG
APT0502
APT0601
APTM100UM45FAG
dk qg
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APT0502
Abstract: APT0601 APTM100UM45DAG
Text: APTM100UM45DAG VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C Single switch with Series diode MOSFET Power Module SK S D G DK S DK Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100UM45DAG
APT0502
APT0601
APTM100UM45DAG
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IRGBC20UD2
Abstract: transistor C698 transistor c693 C-696 c698 transistor
Text: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGBC20UD2
O-220AB
C-700
IRGBC20UD2
transistor C698
transistor c693
C-696
c698 transistor
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IRGBC30MD2
Abstract: No abstract text available
Text: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC30MD2
10kHz)
O-220AB
C-364
IRGBC30MD2
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IRGPC30MD2
Abstract: No abstract text available
Text: PD - 9.1082 IRGPC30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC30MD2
10kHz)
O-247AC.
O-247AD)
O-247AC
IRGPC30MD2
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transistor c693
Abstract: c698 transistor transistor C698 c693 transistor IRGBC20UD2 C698 C696 C693 IRGBC20UD
Text: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGBC20UD2
O-220AB
C-700
transistor c693
c698 transistor
transistor C698
c693 transistor
IRGBC20UD2
C698
C696
C693
IRGBC20UD
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ST T4 1060
Abstract: transistor IRF 630 IRG4IBC20UD
Text: PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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-91752A
IRG4IBC20UD
O-220
ST T4 1060
transistor IRF 630
IRG4IBC20UD
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7512a3
Abstract: 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3
Text: N P TIG B T Modules i • High Short Circuit SOA Capability I 1 ■ —II- I I MDI I VCES Type ■c ^CE *at Tc = 25°C A Tc = 80°C A V 37 52 73 25 38 50 80 ► Mil 100-12A3 ► MID 100-12A3 ► MDI 100-12A3 Package style Eon® typ. 125°C mJ Eoff ^thJC
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150-C
I35-12A
MWI50-12AS
MWI75-12AS
75-12A3
100-12A3
7512a3
10012A3
200-12A4
100-12A3
550-12A4
145-12A3
75-12A3
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Untitled
Abstract: No abstract text available
Text: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC20UD
T0-220AB
S5452
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transistor IR 840
Abstract: OZ930
Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC20UD
T0220AB
transistor IR 840
OZ930
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