Untitled
Abstract: No abstract text available
Text: 高速マルチチャンネル 分光器 PMA100 sの時間分解能で連続スペクトル計測 概 要 高速マルチチャンネル分光器 PMA-20は発光、 蛍光、吸収等の反応におけるスペクトル変化を100 μsの時間分解能で高感度に計測します。
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PMA100
PMA-20ã
SDSS0010J06
JUL/2014
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Untitled
Abstract: No abstract text available
Text: フラッシュフォトリシスシステム ナノ秒~ミリ秒領域における過渡吸収スペクトルや時間分解蛍光スペクトルを容易に測定！ 光化学反応における反応中間体の生成消滅過程を追跡することが可能です。
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SDSS0009J05
JUN/2014
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ESM 713
Abstract: esm 231 transistor mj 4032 8051 midi 16X4 keypad matrix esm 107 RM EMK TR10 transistor ESM 30 eSM010
Text: eSM Series INTEGRATED DEVELOPMENT ENVIRONMENT V1.0 USER’S GUIDE ELAN MICROELECTRONICS CORP. Second Edition September 2004 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.
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EASY-20
eSM020
ESM 713
esm 231
transistor mj 4032
8051 midi
16X4 keypad matrix
esm 107
RM EMK
TR10
transistor ESM 30
eSM010
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Untitled
Abstract: No abstract text available
Text: Time-Resolved Absorption Spectrum Analyzing System 時間分解吸収分光解析システム 極 短 時 間領域における過渡吸 収 ス ペクト ルを測 定 ! 溶液固体、薄膜などの光化学反応における反応中間体の生成消滅過程を追跡することが可能です。
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SHSS0005J03
MAR/2014
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PDF
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esh060
Abstract: IRF 3205 7A irf 3205 a irf 3713 irf 6818 IRF 4310 irf 6250 eSH340 eSH010 8772 P
Text: eSH/eSHS Series INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 1.6 Applicable to eSH/eSHS IDE Version 1.4 and later ELAN MICROELECTRONICS CORP. August 2009 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM
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Untitled
Abstract: No abstract text available
Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G S
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6904A
IRF3805S-7P
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irf3805s
Abstract: AN-994 mj 4310 L0043 irf3805l-7p IRF3805L IRF3805L-7PPBF IRF3805S-7P
Text: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V
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7205A
IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
irf3805s
AN-994
mj 4310
L0043
irf3805l-7p
IRF3805L
IRF3805L-7PPBF
IRF3805S-7P
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V
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7205A
IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
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PDF
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mj 4310
Abstract: Irf 1540 N MOSFET IRF 1540 Irf 1540 G IRF 4310 IRF3805S-7P L0043 DM 7820 AN-994 IRF3805S
Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G ID = 160A
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6904A
IRF3805S-7P
mj 4310
Irf 1540 N
MOSFET IRF 1540
Irf 1540 G
IRF 4310
IRF3805S-7P
L0043
DM 7820
AN-994
IRF3805S
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PDF
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Irf 1540 N
Abstract: Irf 1540 G MOSFET IRF 1540 IRF3805S-7P IRF 4310 AN-994 L0043 IRF3805S mj 4310
Text: PD - 96904 AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G ID = 160A
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IRF3805S-7P
Irf 1540 N
Irf 1540 G
MOSFET IRF 1540
IRF3805S-7P
IRF 4310
AN-994
L0043
IRF3805S
mj 4310
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PDF
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IRF 4310
Abstract: IRF3805S-7P mj 4310 AN-994 IRF3805S L0043
Text: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ G ID = 160A
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6904A
IRF3805S-7P
IRF 4310
IRF3805S-7P
mj 4310
AN-994
IRF3805S
L0043
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PDF
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IRF3805L
Abstract: IRF3805L-7PPBF IRF3805S IRF3805S-7P
Text: IRF3805S-7PPbF IRF3805L-7PPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 2.6m
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IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
IRF3805L
IRF3805L-7PPBF
IRF3805S
IRF3805S-7P
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 2.6mΩ
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97205B
IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
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PDF
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AN-994
Abstract: L0043 IRF3805L IRF3805L-7PPBF IRF3805S
Text: PD - 97205B IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 2.6mΩ
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97205B
IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
AN-994
L0043
IRF3805L
IRF3805L-7PPBF
IRF3805S
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF3805S-7PPbF IRF3805L-7PPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free l l l l l l D VDSS = 55V RDS on = 2.6mΩ G ID = 160A
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IRF3805S-7PPbF
IRF3805L-7PPbF
IRF3805S/L-7PPbF
O-263CA
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PDF
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L0043
Abstract: TO-263CA AUIRF3805S-7PTRL mj 4310 Irf 1540 G Irf 1540 N auirf3805l-7p IRF 4310 MOSFET IRF 1540 AN-994
Text: AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P AUIRF3805L-7P HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRF3805S-7P
AUIRF3805L-7P
O-263CA
L0043
TO-263CA
AUIRF3805S-7PTRL
mj 4310
Irf 1540 G
Irf 1540 N
auirf3805l-7p
IRF 4310
MOSFET IRF 1540
AN-994
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PDF
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P AUIRF3805L-7P HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant
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AUIRF3805S-7P
AUIRF3805L-7P
O-263CA
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PDF
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FDA24N50F
Abstract: No abstract text available
Text: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA24N50F
FDA24N50F
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PDF
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fda24n50f
Abstract: A1872 ir 4310
Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA24N50F
FDA24N50F
A1872
ir 4310
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PDF
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DIN7985
Abstract: semibox DIN-7985 31949100 DIN7985-4 300f diodes C664
Text: IFRMS maximum value for continuous operation, Tcase = 25 °C 664 A V IFAV (sin 180; Tcase = 85 °C; 50 Hz) 423 A SKKE 600 F 1000 SKKE 600 F 10 Preliminary Data 1200 SKKE 600 F 12 Symbol Conditions SKKE 600 F IFDC IFDC IFDC Tcase = 62 °C Tcase = 80 °C Tamb = 45 °C; Rthha = 0,05 °C/W
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P16/300F)
500GA123D
M6x16
DIN7985-4
M6x12
DIN7985
semibox
DIN-7985
31949100
300f diodes
C664
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PDF
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FDMS3604S
Abstract: 501B 8 P 231B DIODE
Text: Preliminary Datasheet FDMS3604S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 6.8 mΩ N-Channel: 30 V, 40 A, 2.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 6.8 mΩ at VGS = 10 V, ID = 13 A
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FDMS3604S
FDMS3604S
501B 8 P
231B DIODE
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FDA24N50F
Abstract: mj 4310
Text: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA24N50F
FDA24N50F
mj 4310
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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OCR Scan
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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DIODE T25 4 EO
Abstract: DIN-7985 DIN7985 M6x12 semibox
Text: se MIKR d n V r sm If r m s V rrm sin 180', Tease —103 °C‘, 50 Hz 290 A If a v V 1000 SKKE 600 F 10 1200 SKKE 600 F 12 SKKE 600 F I fd c I fd c Tease Tam b = 92 °C = 45 °C; I fd c Tam b = 45 °C; Tvj Tvj i2t Qrr R thha = 0,15 K/W (1/6 P16/300F) 7 000 A
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OCR Scan
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P16/300F)
KEaOOf12
DIODE T25 4 EO
DIN-7985
DIN7985
M6x12
semibox
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PDF
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