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    MJ 4025 Search Results

    MJ 4025 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CD4025BKMSR Renesas Electronics Corporation CMOS NOR Gate Visit Renesas Electronics Corporation
    8440258CK-46LFT Renesas Electronics Corporation FemtoClock® Crystal/LVCMOS-to-LVDS/LVCMOS Frequency Synthesizer Visit Renesas Electronics Corporation
    8440259EKI-45LFT Renesas Electronics Corporation FemtoClock® Crystal/LVCMOS-to-LVDS/LVCMOS Frequency Synthesizer Visit Renesas Electronics Corporation
    8440259DK-05LFT Renesas Electronics Corporation FemtoClock® Crystal/LVCMOS-to-LVDS/LVCMOS Frequency Synthesizer Visit Renesas Electronics Corporation
    8440259AK-45LF Renesas Electronics Corporation FemtoClock® Crystal/LVCMOS-to-LVDS/LVCMOS Frequency Synthesizer Visit Renesas Electronics Corporation
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    MJ 4025 Price and Stock

    Tripp Lite NCM-JHW40-25

    Cable Mounting & Accessories 25PK,4" WALLMOUNT STYLE J-HOOK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NCM-JHW40-25
    • 1 $125.59
    • 10 $119.85
    • 100 $114.41
    • 1000 $114.41
    • 10000 $114.41
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    MJ 4025 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SD200SC200A/B/C Technical Data Data Sheet 4025, Rev.- SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:


    Original     		PDF SD200SC200A/B/C

    MJ 4025

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SD200SC200A/B/C Technical Data Data Sheet 4025, Rev.- SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:


    Original     		PDF SD200SC200A/B/C MJ 4025

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    MTP75N03HDL

    Abstract: MTP75N03HDL/D
    Text: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES


    Original     		PDF MTP75N03HDL/D MTP75N03HDL MTP75N03HDL/D* MTP75N03HDL MTP75N03HDL/D

    MTP75N03HDL

    Abstract: MTP75N03HDL/D AN569
    Text: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N03HDL r14525 MTP75N03HDL/D MTP75N03HDL MTP75N03HDL/D AN569

    MTP75N03HDL

    Abstract: No abstract text available
    Text: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N03HDL O-220 r14525 MTP75N03HDL/D MTP75N03HDL

    BUX 127

    Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
    Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B


    OCR Scan     		PDF BD244B BD379 BD380 BD434 BD435 BD440 BD681 BD682 BD712 BD905 BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    d0147

    Abstract: No abstract text available
    Text: IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E IDT79 R3051 /79R3052 INTEGRATED RlSControllers™ Integrated Device Technology, Inc. — On-chip DMA arbiter — Bus Interface minimizes design complexity Single clock input with 40%-60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz


    OCR Scan     		PDF IDT79 R3051 /79R3052 IDT79R3051TM, 79R3051E IDT79R3052TM, 79R3052E IDT/9R3001 IDT79R3000A /IDT79R3001 d0147

    MIPS R3051

    Abstract: No abstract text available
    Text: IDT79R3051/79R3052 RISControllers" IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E Integ ra te d D evice Technology, Inc. FEATURES: • Instruction set com patible with IDT79R3000A and IDT79R3001 MIPS RISC CPUs • High level of integration minimizes system cost, power


    OCR Scan     		PDF IDT79R3051/79R3052 IDT79R3051â 79R3051E IDT79R3052â 79R3052E IDT79R3000A IDT79R3001 /IDT79R3001 R3051 MIPS R3051

    sirit

    Abstract: No abstract text available
    Text: IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E IDT79 R3051 /79R3052 INTEGRATED RlSControllers1'1 Integrated Device Technology, Inc. — On-chip DMA arbiter — Bus Interface minimizes design complexity Single clock input with 40% -60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz


    OCR Scan     		PDF IDT79 R3051 /79R3052 IDT79R3051â 79R3051E IDT79R3052â 79R3052E IDT79R3000A IDT79R3001 sirit

    eerl

    Abstract: ym oca QQ11
    Text: INTEGRATE» DEVICE SflE D • 4025771 R3081 BLOCK DIAGRAM BrCond 3:2,0 C lock G enerator Unit/ C lock Doubler M aster Pipeline Control System Control C oprocessor Integer CPU Core Floating Point C oprocessor (CP1) (CP0) Exception/Control Registers G eneral Registers


    OCR Scan     		PDF 0D112fa7 IDT79R3081 79R3081TM, 79R3081E 79R3081L, 79R3081LE R301OA 84-Pln 84-Pin 79R3081 eerl ym oca QQ11

    arbiter decoder -1996

    Abstract: No abstract text available
    Text: IDT79R3051/79R3052 RlSControllers IDT79R3051™, 79R3051E IDT79R3052”, 79R3052E Integrated Device Technology, Inc. FEATURES: — On-chip DMA arbiter — Bus Interface minimizes design com plexity Single clock input with 40%-60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz


    OCR Scan     		PDF IDT79R3051/79R3052 IDT79R3051TM, 79R3051E IDT79R3052" 79R3052E IDT79R3001 IDT79R3000A /IDT79R3001 R3051 R3052 arbiter decoder -1996

    Untitled

    Abstract: No abstract text available
    Text: A dvanced po w er Tec h n o lo g y APT4020BNR 400V 26.0A 0.200 APT4025BNR 400V 23.0A 0.250 Q D S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS V DSS Parameter APT4020BNR Drain-Source Voltage /\ APT4025BNR


    OCR Scan     		PDF APT4020BNR APT4025BNR APT4020BNR APT4025BNR MIL-STD-750 O-247AD DDD1455

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: •R A dvanced W .\A P o w e r Te c h n o l o g y * APT4020BNR APT4025BNR 400V 26.0A 0.20U 400V 23.0A 0.25Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT4020BNR APT4025BNR APT4025BNR MIL-STD-750 O-247AD

    APT4020BNR

    Abstract: APT4025BNR
    Text: A d van ced P o w er Te c h n o lo g y Q D O APT4020BNR APT4025BNR S POWER MOS IV® 400V 400V 26.0A 0.20Í1 23.0A 0.25Q AVALANCHE RATED N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol V DSS 'd Al, Ratinnc. T _ _ OKor. ,


    OCR Scan     		PDF APT4020BNR APT4025BNR APT4020BNR APT4025BNR MIL-STD-750 O-247AD

    R3081E

    Abstract: MIPS R3051 t2222
    Text: IDT 79R3081 , 79R3081E IDT 79RV3081, 79RV3081E IDT79R3081 RISController" Integrated Device Technology, Inc. FEATURES Large on-chip caches with user configurability — 16kB Instruction Cache, 4kB Data Cache — Dynamically configurable to 8kB Instruction Cache,


    OCR Scan     		PDF IDT79R3081 79R3081 79R3081E 79RV3081, 79RV3081E IDT79R3000A, R3051, R3500 R3000A R3010A R3081E MIPS R3051 t2222

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 G67078-S1301 AE35b05 fl235bCIS 00fl4030

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    AD143

    Abstract: ad148 ASZ1015 Germanium Power Devices
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20


    OCR Scan     		PDF ADY11 ADY27 NS257 AD143 ad148 ASZ1015 Germanium Power Devices

    Untitled

    Abstract: No abstract text available
    Text: IDT79R3071 IDT79R3071E IDT79R3071 RISController" Integrated Device Technology, Inc. FEATURES Large on-chip caches with user configurability — 16kB Instruction Cache, 4kB Data Cache — Dynamically configurable to 8kB Instruction Cache, 8kB Data Cache


    OCR Scan     		PDF IDT79R3071 IDT79R3071E IDT79R3071â 84-pin 4A25771 IDT79R3071 79R3071 79R3071E 79R3071

    AD149

    Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3


    OCR Scan     		PDF AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17