eon f80
Abstract: 9T16 1850NM ICM50
Text: ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V PSIG 50/06 PSI 50/06* PSIS 50/06* PSSI 50/06* LN 9 S18 A1 JK 10 OP 9 PSIG PSI L 9 PSI 50/06* PSIG 50/06 E 2 PSIS 50/06*
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25T60
50-06P1
eon f80
9T16
1850NM
ICM50
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Untitled
Abstract: No abstract text available
Text: APTC60AM83BC1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC60AM83BC1G
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300V dc dc boost converter
Abstract: No abstract text available
Text: APTC60AM83B1G Boost chopper: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 7 Phase leg: VDSS = 600V RDSon = 83mΩ max @ Tj = 25°C ID = 36A @ Tc = 25°C 6 CR2 8 Q3 CR1 2 1 4
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APTC60AM83B1G
case150
300V dc dc boost converter
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BSM 225
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Gesamt-Verlust75
BSM 225
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BSM 15 GB
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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24TRANSISTOR
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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BSM 15 GB
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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IF1400
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 16 KF6 - B1 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 16 40 2,5 deep C2 53 18 G2 44 2,5 deep 57 E1 C2 C1 E2 E1
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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VAL-MS 350 VF
Abstract: FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM
Text: POWERSET BC/3+1-100VF POWERSET BC/3+1-100VF/FM Installation Instructions L-N MPB 18/1-8-BU VAL-MS 350. UN 230 V AC 230 V AC 230 V UC 440 V AC 50/60 Hz 350 V AC 260 V AC 50/60 Hz ≤ 1,5 kV ≤ 1,2 kV ≤ 1,5 kV 35 kA / 17,5 As / 305 kJ/Ω – 100 kA / 50 As /
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1-100VF
1-100VF/FM
18/1-8-BU
kA/440
80tra
VAL-MS 350 VF
FLT 350 ST PHOENIX
FLT-35
CTRL09
FLASHTRAB FLT-35
FLT 100 N/PE
VAL-MS 230/3 1 FM
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data sheet for m1104 rf transistor
Abstract: m1104 rf transistor TAG 8926 transistor m1104 M1104 B57087 ntc k277 thermistor k276 B57861 siemens NTC DIN iso 13715
Text: Contents Index of Types 5 9 Selector Guide Applications 11 19 General Technical Information 23 Data Sheets 45 Standardized R/T Characteristics Mounting Instructions Quality Environmental Protection, Climatic Conditions Taping and Packing Symbols and Terms
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Untitled
Abstract: No abstract text available
Text: APTC60AM45BC1G Boost chopper & Phase Leg Super Junction MOSFET Power Module 5 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Solar converter 6 CR2 8 Q3 CR1 2 1 4 Q2 Q4 11 9 10 Features • CoolMOS
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APTC60AM45BC1G
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DLS 07.05.1998 BSM 400 GA 170 DLS vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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SKiiP 82 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t 1 SKiiP 83 AC 12 i t semikron skiip 82 ac SKiiP 82 AC 12 SKiiP 82 AC 12 i t semikron skiip 82 Ac 12 ct3 "current sensor" semikron skiip 83 semikron skiip 82 Ac 12 i
Text: SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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Semipack skfh 40
Abstract: si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M
Text: Ifrms maximum values for continuous opïeration V rsm V rrm 130 A V 60A(94°C) | 130 A [ 300A Ifav (sin. 180; Tea58 ” «••°C; 50 Hz 160 A (86 °C) 60A(94°C) 300 A 160 A (86 °C) SKFH110/04. 400 800 SKFH 40/08 SKFH 60/08. SKFH110/08. SKKD 160 M08
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SKFH110/04.
SKFH110/10.
SKKD160
11000A2s
Tvj-130Â
io-31
Tvr25Â
Semipack skfh 40
si 13001
Semipack skfh
skfh
Semipack 1 skfh
thyristor tt 86 n 1800
tr 13001
SKFH40
SKFH60
SKKD160M
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TO-238
Abstract: JE23 FP1010
Text: SEMIKRON INC is E o I a i3 f c > b 7 3 i ' 0 7 _ V rs M V rrm Ifrms maximum value for continuous operation 40 A V Ifav (sin. 180; Tease = 85 °C; 50 Hz) 15,2 A 400 SKLD 20 F 04 SKM D 20 F 04 600 S KLD 20 F 06 SKM D 20 F 06 800 S KLD 20 F 08 SKM D 20 F 08
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SKLD20
Q0Q14b2
SKLD20F
O-238
SKMD20F
TO-238
JE23
FP1010
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