Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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BSM 225
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Gesamt-Verlust75
BSM 225
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BSM 15 GB
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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24TRANSISTOR
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally
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VAL-MS 350 VF
Abstract: FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM
Text: POWERSET BC/3+1-100VF POWERSET BC/3+1-100VF/FM Installation Instructions L-N MPB 18/1-8-BU VAL-MS 350. UN 230 V AC 230 V AC 230 V UC 440 V AC 50/60 Hz 350 V AC 260 V AC 50/60 Hz ≤ 1,5 kV ≤ 1,2 kV ≤ 1,5 kV 35 kA / 17,5 As / 305 kJ/Ω – 100 kA / 50 As /
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1-100VF
1-100VF/FM
18/1-8-BU
kA/440
80tra
VAL-MS 350 VF
FLT 350 ST PHOENIX
FLT-35
CTRL09
FLASHTRAB FLT-35
FLT 100 N/PE
VAL-MS 230/3 1 FM
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inversor dc a ac
Abstract: FLT 350 ST PHOENIX FLASHTRAB FLT-35 FLT100 CTRL15 VAL-MS 350 ST inversor
Text: POWERSET BC-440/3+1-100/FM Installation Instructions L-N POWERSET BC-440/3+1-100/FM 28 59 44 0 VAL-MS 400/FM UN – 400 V AC 230 V UC 440 V AC 50/60 Hz 440 V AC 260 V AC 50/60 Hz MPB 18/1-8-BU ZBN 18 ≤ 1,5 kV ≤ 2,2 kV ≤ 1,5 kV 35 kA / 17,5 As / 305 kJ/Ω
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BC-440/3
1-100/FM
400/FM
18/1-8-BU
inversor dc a ac
FLT 350 ST PHOENIX
FLASHTRAB FLT-35
FLT100
CTRL15
VAL-MS 350 ST
inversor
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DLS 07.05.1998 BSM 400 GA 170 DLS vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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SKiiP 82 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t 1 SKiiP 83 AC 12 i t semikron skiip 82 ac SKiiP 82 AC 12 SKiiP 82 AC 12 i t semikron skiip 82 Ac 12 ct3 "current sensor" semikron skiip 83 semikron skiip 82 Ac 12 i
Text: SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500
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Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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GA170DL
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values
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CDM-AEC-Q100-011
Abstract: VNQ5E160K-E VNQ5E160KTR-E
Text: VNQ5E160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max on-state resistance per ch. RON Current limitation (typ) ILIMH 10 A Off-state supply current IS
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VNQ5E160K-E
2002/95/EC
CDM-AEC-Q100-011
VNQ5E160K-E
VNQ5E160KTR-E
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Untitled
Abstract: No abstract text available
Text: VNQ5E160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max on-state resistance per ch. RON Current limitation (typ) ILIMH 10 A Off-state supply current IS
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VNQ5E160K-E
PowerSSO-24
2002/95/EC
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pulse load calculation formula for single pulse
Abstract: pulse load resistor calculation formula VNQ5E160K-E CDM-AEC-Q100-011 JESD97 VNQ5E160KTR-E
Text: VNQ5E160K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max On-State resistance per ch. RON Current limitation (typ) ILIMH 10 A Off state supply current IS
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VNQ5E160K-E
PowerSSO-24
2002/95/EC
pulse load calculation formula for single pulse
pulse load resistor calculation formula
VNQ5E160K-E
CDM-AEC-Q100-011
JESD97
VNQ5E160KTR-E
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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SKiiP 83 AC 12 i t 1
Abstract: SKiiP 81 AC 12 i t SKiiP 81 AC 12 i t 1 SKiiP 82 AC 12 i t SKiiP 83 AC 12 i t SKIIP SKIIP 81 ac SKiiP 82 AC 12 i t 1 81ac12 semikron IGBT SKIIP 81 ac 12
Text: SKiiP 81 AC 12 - SKiiP 81 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. Values 1200 ± 20 65 / 45 130 / 90 – 40 . . . + 150 – 40 . . . + 125 2500
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Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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SKiiP 83 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t semikron skiip 83 83AC12 SKiiP 83 AC 12 SKIIP 83 AC 12 T 12 SKiiP 83 AC 12 i t 2 SKiiP 82 AC 12 i t 1 ct3 "current sensor" SKIIP
Text: SKiiP 83 AC 12 - SKiiP 83 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Values 1200 ± 20 125 / 85 250 / 170 – 40 . . . + 150 – 40 . . . + 125 2500 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.
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Semipack skfh 40
Abstract: si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M
Text: Ifrms maximum values for continuous opïeration V rsm V rrm 130 A V 60A(94°C) | 130 A [ 300A Ifav (sin. 180; Tea58 ” «••°C; 50 Hz 160 A (86 °C) 60A(94°C) 300 A 160 A (86 °C) SKFH110/04. 400 800 SKFH 40/08 SKFH 60/08. SKFH110/08. SKKD 160 M08
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SKFH110/04.
SKFH110/10.
SKKD160
11000A2s
Tvj-130Â
io-31
Tvr25Â
Semipack skfh 40
si 13001
Semipack skfh
skfh
Semipack 1 skfh
thyristor tt 86 n 1800
tr 13001
SKFH40
SKFH60
SKKD160M
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88C
bb53T31
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5BE1
Abstract: bdt61 Darlington NPN Silicon Diode
Text: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.
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BDT61
BDT61B
BDT60,
O-220.
7110fl2b
G04B527
B2097
5BE1
Darlington NPN Silicon Diode
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Untitled
Abstract: No abstract text available
Text: s e MIKROn C o n d itio n s 1’ vV js o l 4 AC, 1min Operating / stor. tem perature o o /)—I S’ Symbol —I SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °c 1200 V V A IGBT and FW D Diode VcES V cc5)
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