C-Press
Abstract: Winchester ansi unc 4-40 screw 05s300 21-s300 HE61 5-44 UNF plug IPC-D-422 09NO3
Text: C-Press Table Of Contents Series Description Page Compliant Contact 3-4 Specifications 5 Edgecard Design Information For All C-Press® Edgecard Connectors 6 MK, NK, MJ & NJ Series Edgecard .100" x .200" C Grid 7-8 MK, NK, MJ & NJ Series Edgecard .125" x .250" D Grid
|
Original
|
PDF
|
|
160-16NO2
Abstract: No abstract text available
Text: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 188 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data M1/O1 VRRM Type S1 VRRM Type V A6~ E6~ K6~ V U1/W1 1200 VUB 120-12 NO2 1600 VUB 120-16 NO2 1200 VUB 160-12 NO2 1600 VUB 160-16 NO2
|
Original
|
PDF
|
VUB160
160-16NO2
|
K0605
Abstract: mj 1032
Text: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 188 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data M1/O1 VRRM Type VRRM V Type W5 U1/ W1 A6~ E6~ K6~ V 1200 VUB 120-12 NO2 T 1200 VUB 160-12 NO2(T) S1 W6 1600 VUB 120-16 NO2(T)
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 188 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data M1/O1 VRRM Type S1 VRRM Type V U1/ W1 A6~ E6~ K6~ V W5 W6 1200 VUB 120-12 NO2 T (L) 1600 VUB 120-16 NO2(T)(L)
|
Original
|
PDF
|
|
vub 70 -16
Abstract: VUB160 120-16NO1 VUB 120 ixys vub 70 -16 F3-10 160-12NO1 9V bridge rectifier ic three phase half controlled rectifier VUB60
Text: 3~ Rectifier Bridges with Brake Unit Contents 2 3 Page 1600 1200 A 1 VRRM/VDRM V Type 1400 IdAV Rectifier Bridges Circuit configuration 12 14 16 1 51 ● ● VUB 51-.NO1 F3 - 2 2 59 ● ● VUB 60-.NO1 F3 - 4 2 59 ● ● VUB 71-.NO1 F3 - 8 3 120 ●
|
Original
|
PDF
|
F3-10
F3-14
vub 70 -16
VUB160
120-16NO1
VUB 120
ixys vub 70 -16
F3-10
160-12NO1
9V bridge rectifier ic
three phase half controlled rectifier
VUB60
|
Untitled
Abstract: No abstract text available
Text: QID0660023 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT Module 600 Amperes/600 Volts A D Q - (5 PLACES) E2 G2 B E F C2E1 C1 H - (3 PLACES) E2 G E1 G1 J G C1 K M C L - (4 PLACES) K M Description:
|
Original
|
PDF
|
QID0660023
Amperes/600
-2000A/Â
|
vub 70 -16
Abstract: vub 70 ixys vub 70 -16 160-16NO1 ixys vub 70 160-12NO1 S-8912
Text: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 121/157 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data VRRM Type VRRM V Type V 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 IFSM
|
Original
|
PDF
|
VUB160
vub 70 -16
vub 70
ixys vub 70 -16
160-16NO1
ixys vub 70
160-12NO1
S-8912
|
Untitled
Abstract: No abstract text available
Text: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 121/157 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data VRRM Type VRRM V Type V 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 IFSM
|
Original
|
PDF
|
VUB160
150ry
|
D 339
Abstract: QID0660023 E2GJ
Text: QID0660023 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT Module 600 Amperes/600 Volts A D Q - (5 PLACES) E2 G2 C2E1 E2 G J G E1 G1 B E F C1 H - (3 PLACES) C1 K M C L - (4 PLACES) K M Description:
|
Original
|
PDF
|
QID0660023
Amperes/600
-2000A/
D 339
E2GJ
|
IRFB4127
Abstract: 4.5V to 100V input regulator
Text: PD -97136 IRFB4127PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits VDSS RDS on typ. max. ID D G S Benefits l Improved Gate, Avalanche and Dynamic dV/dt
|
Original
|
PDF
|
IRFB4127PbF
O-220AB
O-220AB
IRFB4127
4.5V to 100V input regulator
|
51-12NO1
Abstract: vub 70
Text: VUB 51 VRRM = 1200-1600 V IdAV = 51 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM 1 2 Type 4 5 V VUB 51-12 NO1 VUB 51-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
|
Original
|
PDF
|
|
vub 70
Abstract: vub 70 -16 mj 1032 ic ca 747 ixys vub 70 -16
Text: VUB 60 with IGBT and FRED for Braking System 6 5 Preliminary data VRRM V 2 VUB 60 - VRRM IF AV M IFRMS TH = 110°C, sinusiodal 120° limited by construction Rectifier Diodes Test Conditions I2 t 4 VUB 60 - Symbol I FSM 1 2 1 7 9 1200 12 NO1 1600 16 NO1 4 5
|
Original
|
PDF
|
D-68623
vub 70
vub 70 -16
mj 1032
ic ca 747
ixys vub 70 -16
|
siemens igbt
Abstract: dc43a
Text: VUB 71 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 71-12 NO1 VUB 71-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: VVZB 120 VRRM = 1200-1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM Type V VVZB 120-12 io1 VVZB 120-14 io1 VVZB 120-16 io1 Conditions IdAV IFRMS/ITRMS Tcase= 80°C, sinusoidal 120°
|
Original
|
PDF
|
B25/100
|
|
|
ultraFast Recovery Bridge Rectifier
Abstract: half controlled rectifier
Text: VVZB 120 VRRM = 1200/1600 V IdAV = 120 A Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary data VRRM Type V 1200 1600 VVZB 120-12 io2 T VVZB 120-16 io2(T) (T) = NTC optional Conditions IdAV IFRMS/ITRMS
|
Original
|
PDF
|
B25/100
ultraFast Recovery Bridge Rectifier
half controlled rectifier
|
irl 1404 mosfet
Abstract: 220 v DC H-bridge motor speed control Gate Driver of IRL1404 irf 1404 equivalent IRL1404 TO220- 4 L PWM SWITCH M1 DIODE schottky PD60205 IR3221 TSD 3221
Text: Preliminary Data Sheet No. PD60205 IR3221 FULLY PROTECTED H-BRIDGE for DC MOTOR Features • • • • • • • • Product Summary Over temperature shutdown Over current shutdown Ιnrush current limited by Soft-Start sequence E.S.D protection Sleep mode for direct battery connection
|
Original
|
PDF
|
PD60205
IR3221
IR3221
IRL1404)
2x1000uF
100nF
irl 1404 mosfet
220 v DC H-bridge motor speed control
Gate Driver of IRL1404
irf 1404 equivalent
IRL1404
TO220- 4 L PWM SWITCH
M1 DIODE schottky
PD60205
TSD 3221
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
PDF
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
IGNITOR Z 400 M diagram
Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8
Text: PANASONIC INDL/ELEK-CSEtllJ 7EC D | 1 1 3 5 6 5 M □ 7 ^ 3^ / / | 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^
|
OCR Scan
|
PDF
|
2SD1032,
2SD1032A
2SB812,
2SB812A
2SB812A
2SD1032
IGNITOR Z 400 M diagram
2SD1043
2SB812
IC 78
2SD1032A
IC4a
ic t 4a 8
|
siemens igbt 75a
Abstract: 3 phase dynamic braking
Text: □ IXYS VUB 1 2 0 /1 6 0 V RRM Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System dAVM M1/01 RRM /rrm Type V 1200 1200 VUB 120-12 NOI 1600 VUB 120-16 NOI VUB 160-12 NOI 1600 VUB 160-16 NOI T e s t C o n d itio n s UsM l 2t in
|
OCR Scan
|
PDF
|
M1/01
M1D/010
S10iT10
VUB160
siemens igbt 75a
3 phase dynamic braking
|
YF105
Abstract: No abstract text available
Text: □IXYS Three Phase Rectifier Bridge VUB 60 with IGBT and Fast Recovery Diode for Braking System V RRM V RRM I 1200-1600 V 70 A dAVM Type V VUB 6 0 -1 2 N01 VUB 6 0 -1 6 NOI 1200 1600 Symbol Test Conditions Maximum Ratings 1200/1600 59 70 V A A T, 45°C, t : 10 ms, VR= 0 V
|
OCR Scan
|
PDF
|
|
*c1251c
Abstract: TC100LC
Text: IRFS450A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ VDS= 500V
|
OCR Scan
|
PDF
|
IRFS450A
100lC)
*c1251c
TC100LC
|
D1033
Abstract: No abstract text available
Text: IRFS450A Advanced Power MOSFET FEATURES B V qss • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 p A Max. @ VOS= 500V ■
|
OCR Scan
|
PDF
|
IRFS450A
D1033
|
Untitled
Abstract: No abstract text available
Text: □ IXYS «*>•< Three Phase Rectifier Bridge VRRM = 1200-1600 V with IGBT and Fast Recovery Diode for Braking System 'd A V = 51 A Preliminary data V RRM Type V 1200 1600 VUB 51-12 N01 VUB 51-16 N01 Symbol Test Conditions Maximum Ratings Vw RRM ^dAV ^dAVM
|
OCR Scan
|
PDF
|
00A/ns
|
Untitled
Abstract: No abstract text available
Text: □ IXYS VUB71 Three Phase Rectifier Bridge VRRM = 1200-1600 V with IGBT and Fast Recovery Diode for Braking System 'dAVM V RRM = 7 0 A Type V 1200 1600 VUB 71-12 NOI VUB 71-16 NOI Symbol Test Conditions Maximum Ratings V RRM ^dAV ^dAVM Cfl o UsM b T h = 110°C, sinusoidal 120°
|
OCR Scan
|
PDF
|
VUB71
|
