AN-1005
Abstract: IRF7484
Text: PD - 94446A IRF7484 Typical Applications Relay replacement Anti-lock Braking System Air Bag O O O HEXFET Power MOSFET VDSS RDS on max (mW) Benefits O O O O Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax
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4446A
IRF7484
relia461
EIA-481
EIA-541.
AN-1005
IRF7484
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"anti lock braking system"
Abstract: IRf 80 12 MOSFET IRF Power MOSFET code marking 12V 10A voltage regulators HEXFET Power MOSFET HEXFET SO-8 MARKING CODE SO-8 MOSFET IRF 635 Datasheet MOSFET SO-8 SO-8
Text: PD - 94803 AUTOMOTIVE MOSFET IRF7484Q Typical Applications Relay replacement Anti-lock Braking System Air Bag O O O HEXFET Power MOSFET VDSS RDS on max (mW) Benefits O O O O Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax
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IRF7484Q
EIA-481
EIA-541.
"anti lock braking system"
IRf 80 12 MOSFET
IRF Power MOSFET code marking
12V 10A voltage regulators
HEXFET Power MOSFET
HEXFET SO-8
MARKING CODE SO-8
MOSFET IRF 635 Datasheet
MOSFET SO-8
SO-8
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Untitled
Abstract: No abstract text available
Text: PD -93945 IRF7314Q HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual N-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature
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IRF7314Q
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IRF7314Q
Abstract: No abstract text available
Text: PD -93945A IRF7314Q HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature
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-93945A
IRF7314Q
IRF7314Q
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IRF7341Q
Abstract: No abstract text available
Text: PD - 94391A IRF7341Q HEXFET Power MOSFET Typical Applications • Anti-lock Braking Systems ABS • Electronic Fuel Injection • Air bag Benefits • • • • • • VDSS RDS(on) max ID 55V 0.050@VGS = 10V 0.065@VGS = 4.5V 5.1A 4.42A Advanced Process Technology
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4391A
IRF7341Q
IRF7341Q
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IRLL024NQ
Abstract: No abstract text available
Text: PD-94152 AUTOMOTIVE MOSFET Typical Applications ● ● ● ● ● IRLL024NQ HEXFET Power MOSFET Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats Cruise Control Air Bags D Benefits ● ● ● ● ● ● Advanced Process Technology
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PD-94152
IRLL024NQ
OT-223
IRLL024NQ
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IEC 60068-2-14 standard
Abstract: k 3436 k3436 B57550 B57551 IEC 60068-2-2 NTC G540 3497 G540 G550
Text: Temperature measurement Glass-encapsulated sensors Glass-encapsulated sensors Page Standard types B57540, G540 B57550, G550 B57560, G560 68 70 72 Coated types B57541, G541 B57551, G551 B57561, G561 Please read Important notes on page 2 and Cautions and warnings on page 227.
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B57540,
B57550,
B57560,
B57541,
B57551,
B57561,
B57540
B25/100
B57561G0103
R25/R25
IEC 60068-2-14 standard
k 3436
k3436
B57550
B57551
IEC 60068-2-2
NTC G540
3497
G540
G550
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Untitled
Abstract: No abstract text available
Text: 955 , 9 $ )DVW'LRGH 'LH 6/; * 'LH VL]H [ PP Doc. No. 5SYA1660-02 July 03 • • • • )DVW DQG VRIW UHYHUVHUHFRYHU\ /RZ ORVVHV 5XJJHG 62$ VDIH RSHUDWLQJ DUHD )URQWVLGH SDVVLYDWLRQ SRO\LPLGH 0D[LPXP UDWHG YDOXHV 3DUDPHWHU
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5SYA1660-02
5SYA2033-01
CH-5600
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R 1664 datasheets
Abstract: 5SMX12L2510 diode wg
Text: 955 , 9 $ )DVW'LRGH 'LH 6/; / 35 /,0,1$5< 'LH VL]H [ PP Doc. No. 5SYA 1664-01 Nov.03 • • • • )DVW DQG VRIW UHYHUVHUHFRYHU\ /RZ ORVVHV /DUJH 62$ 3DVVLYDWLRQ 6,326 DQG 6LOLFRQ 1LWULGH SOXV 3RO\LPLGH 0D[LPXP UDWHG YDOXHV
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CH-5600
R 1664 datasheets
5SMX12L2510
diode wg
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Untitled
Abstract: No abstract text available
Text: 955 , 9 $ )DVW'LRGH 'LH 6/; . 35 /,0,1$5< 'LH VL]H [ PP Doc. No. 5SYA1662-00 July 03 • • • • )DVW DQG VRIW UHYHUVHUHFRYHU\ /RZ ORVVHV 5XJJHG 62$ VDIH RSHUDWLQJ DUHD 3DVVLYDWLRQ 6,326 1LWULGH SOXV 3RO\LPLGH 0D[LPXP UDWHG YDOXHV
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5SYA1662-00
5SYA2033-01
CH-5600
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transistor k 975
Abstract: No abstract text available
Text: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
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QID4515001
Amperes/4500
180nH
100nH
transistor k 975
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5SMX12M3300
Abstract: No abstract text available
Text: VRR = IF = 3300 V 100 A Fast-Diode Die 5SLX 12M3301 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1661-01 Sep 03 • · · · Fast and soft reverse-recovery Low losses Highly rugged SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter
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12M3301
5SYA1661-01
5SYA2033-01
CH-5600
5SMX12M3300
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Untitled
Abstract: No abstract text available
Text: 955 , 9 $ )DVW'LRGH 'LH 6/; 0 35 /,0,1$5< 'LH VL]H [ PP Doc. No. 5SYA1663-00 July 03 • • • • )DVW DQG VRIW UHYHUVHUHFRYHU\ /RZ ORVVHV 5XJJHG 62$ VDIH RSHUDWLQJ DUHD 3DVVLYDWLRQ 6,326 1LWULGH SOXV 3RO\LPLGH 0D[LPXP UDWHG YDOXHV
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5SYA1663-00
5SYA2033-01
CH-5600
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"anti lock braking system"
Abstract: AN-1005 IRF7484Q
Text: PD - 94803A AUTOMOTIVE MOSFET IRF7484Q Typical Applications Relay replacement Anti-lock Braking System Air Bag O O O HEXFET Power MOSFET VDSS RDS on max (mW) Benefits O O O O Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax
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4803A
IRF7484Q
EIA-481
EIA-541.
"anti lock braking system"
AN-1005
IRF7484Q
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|
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Untitled
Abstract: No abstract text available
Text: 955 , 9 $ )DVW'LRGH 'LH 6/; * 'LH VL]H [ PP Doc. No. 5SYA1660-01 Jul 03 • )DVW DQG VRIW UHYHUVHUHFRYHU\ • /RZ ORVVHV • 5XJJHG 62$ VDIH RSHUDWLQJ DUHD 0D[LPXP UDWHG YDOXHV 3DUDPHWHU Repetitive peak reverse voltage Continuous forward current
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5SYA1660-01
5SYA2033-01
CH-5600
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AN-1005
Abstract: IRF7484
Text: PD - 94446C IRF7484 Typical Applications Relay replacement Anti-lock Braking System Air Bag l l l HEXFET Power MOSFET VDSS RDS on max (mW) Benefits l l l l 40V Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax
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94446C
IRF7484
spe461
EIA-481
EIA-541.
AN-1005
IRF7484
|
Untitled
Abstract: No abstract text available
Text: 955 , 9 $ )DVW'LRGH 'LH 6/; 0 35 /,0,1$5< 'LH VL]H [ PP Doc. No. 5SYA1661-00 July 03 • • • • )DVW DQG VRIW UHYHUVHUHFRYHU\ /RZ ORVVHV +LJKO\ UXJJHG 62$ )URQWVLGH SDVVLYDWLRQ SRO\LPLGH 0D[LPXP UDWHG YDOXHV 3DUDPHWHU
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5SYA1661-00
5SYA2033-01
CH-5600
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AN-1005
Abstract: No abstract text available
Text: PD - 95281 IRF7484PbF Typical Applications Relay replacement Anti-lock Braking System Air Bag Lead-Free l l l l HEXFET Power MOSFET VDSS RDS on max (mW) 40V 10@VGS = 7.0V ID 14A Benefits l l l l Advanced Process Technology Ultra Low On-Resistance Fast Switching
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IRF7484PbF
EIA-481
EIA-541.
AN-1005
|
AN-1005
Abstract: No abstract text available
Text: PD - 96167 AUTOMOTIVE MOSFET IRF7484QPbF Typical Applications Relay replacement Anti-lock Braking System Air Bag l l l HEXFET Power MOSFET VDSS RDS on max (mW) Benefits l l l l l l Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax
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IRF7484QPbF
EIA-481
EIA-541.
AN-1005
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I27128
Abstract: 19MT050XF Full-Bridge Gate Driver SMPS 500V
Text: Bulletin I27128 Rev.C 07/03 19MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current Aluminum Nitride DBC
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I27128
19MT050XF
E7899f
19MT050XF
Full-Bridge Gate Driver SMPS 500V
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mk 5415
Abstract: No abstract text available
Text: Bulletin I27143 Rev.B 07/03 25MT060WF "FULL-BRIDGE" IGBT MTP Warp Speed IGBT Features Gen. 4 Warp Speed IGBT Technology HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
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I27143
25MT060WF
E78996
mk 5415
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Untitled
Abstract: No abstract text available
Text: PD - 94446 IRF7484 Typical Applications Relay replacement Anti-lock Braking System Air Bag ● ● ● HEXFET Power MOSFET VDSS RDS on max (mΩ) Ω) Benefits ● ● ● ● 40V Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax
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IRF7484
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Untitled
Abstract: No abstract text available
Text: WIRE RANGE ID MARK C 'S 'S I Z E HARK> C5TAMPED ON SOTTOMJ t t T n ai- E B rg g A -A B sffB a B -B S E C T A -A SECT B - B ± 0 .5 2 0 .7 £ 0-3 L 5 ±0.3 |g f^~ ^ a. 9 S. 2 _ 2 .5 A. ±0.4 32 B .1 7 .5 2 .3 B « — SH . v to 1 .5 5QÉ. 1* 2 . *>v • NO TE;
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CJ-1333>
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Untitled
Abstract: No abstract text available
Text: IX Ref.-plane R e f .-e be ne hO O l O QJ cn QJ &-MJ 3 a QJ — OO O in ^S«C a> CD o Il II X X 0 6 ,0 PCB-Layout 4 , Ai rgap max.1,0 mm: * i . e . at mat ing lenght < 1,0 + X 12+0,17=0,5 no d e t e r i o r a t i o n of RF per f or manc e Luf tspa11 max. 1,0 mm:
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tspa11
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