2SA1815
Abstract: 2SC4432 ITR04747 ITR04748
Text: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.
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ENN4625
2SA1815
100MHz)
750MHz
2SC4432.
2018B
2SA1815]
2SA1815
2SC4432
ITR04747
ITR04748
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EN4625
Abstract: transistor 2sA1815 2SA1815 2SC4432
Text: Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.
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EN4625
2SA1815
100MHz)
750MHz
2SC4432.
2SA1815]
EN4625
transistor 2sA1815
2SA1815
2SC4432
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EN3007
Abstract: 741 IC circuit applications 2SC4365 VEBO-15V
Text: Ordering number:EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)
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EN3007
2SC4365
2018B
2SC4365]
EN3007
741 IC circuit applications
2SC4365
VEBO-15V
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F J1 3007-2
Abstract: J1 3007-2 J1 3007-1
Text: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)
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ENN3007
2SC4365
2018B
2SC4365]
F J1 3007-2
J1 3007-2
J1 3007-1
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TEMPERATURE CONTROL IC 4570
Abstract: SANYO DC 303 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ic 4570
Text: Ordering number:ENN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)
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ENN3008
2SC4364
2018B
2SC4364]
TEMPERATURE CONTROL IC 4570
SANYO DC 303
2SC4364
ITR06644
ITR06645
ITR06646
ITR06647
ITR06648
ic 4570
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AMPLIFIER SANYO DC 303
Abstract: 2SC4364 VEBO-15V ic 4570 SANYO DC 303
Text: Ordering number:EN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)
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EN3008
2SC4364
2018B
2SC4364]
AMPLIFIER SANYO DC 303
2SC4364
VEBO-15V
ic 4570
SANYO DC 303
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J1 3007-1
Abstract: J1 3007-2 2SC4365 ITR06656 ITR06657 ITR06658 ITR06659 ITR06660 F J1 3007-2 marking amplifier j02
Text: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)
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ENN3007
2SC4365
2018B
2SC4365]
J1 3007-1
J1 3007-2
2SC4365
ITR06656
ITR06657
ITR06658
ITR06659
ITR06660
F J1 3007-2
marking amplifier j02
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marking amplifier j02
Abstract: No abstract text available
Text: Ordering number:ENN3008 NPN Epitaxial Planar Silicon Transistor 2SC4364 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)
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ENN3008
2SC4364
2018B
2SC4364]
30ric
marking amplifier j02
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J1 3007-1
Abstract: IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658
Text: 注文コード No. N 3 0 0 7 2SC4365 No. N 3 0 0 7 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4365 特長 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 ・低電圧動作：fT=3.0GHz typ（VCE=3V） 。 ：MAG=12dB typ（VCE=3V, IC=10mA）。
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2SC4365
S21e2
2018B
J1 3007-1
IC 4049
F J1 3007-2
J1 3007-2
hfe 4049
ic c 1891
ITR06659
IC 2822
ITR06656
ITR06658
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ic 4570
Abstract: 2SC4364 ITR06644 ITR06645 ITR06646 ITR06647 ITR06648 ITR06649 ITR06650 ITR06651
Text: 注文コード No. N 3 0 0 8 2SC4364 No. N 3 0 0 8 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4364 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 特長 ・低電圧動作：fT=3.0GHz typ（VCE=3V） 。 ：MAG=11dB typ（VCE=3V, IC=3mA）
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2SC4364
S21e2
ic 4570
2SC4364
ITR06644
ITR06645
ITR06646
ITR06647
ITR06648
ITR06649
ITR06650
ITR06651
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2SA1815
Abstract: N1099 transistor 2sA1815 2SC4432 ITR04747 ITR04748 ITR04749 ITR04750 ITR04751 ITR04752
Text: 注文コード No. N 4 6 2 5 2SA1815 No. N 4 6 2 5 N1099 2SA1815 特長 PNP エピタキシァルプレーナ形シリコントランジスタ FM, RF, MIX, IF 増幅 , 高周波一般増幅用 ・電力利得が大きい：PG=25dB typ（f=100MHz） 。 ・しゃ断周波数が高い：fT=750MHz typ。
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2SA1815
N1099
100MHz
750MHz
2SC4432
ITR04749
ITR04750
2SA1815
N1099
transistor 2sA1815
2SC4432
ITR04747
ITR04748
ITR04749
ITR04750
ITR04751
ITR04752
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TOKO CERAMIC FILTER a55
Abstract: No abstract text available
Text: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio • Overview Unit : mm ■ Features • Single chip ICs incorporating AM tuner block to power amp. block • Low power consumption : 17mA at no signal • Built-in tuning indicator circuit
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AN7002K,
AN7002S
AN7002K
AN7002K
AN7002S
22-Lead
SDIP022-P-0300A)
455kHz
TOKO CERAMIC FILTER a55
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CFM455
Abstract: AN700 AN7002K mitsumi 455KHz filter matsushita 455KHz ceramic filter AM/Tuners 2SA952 AN7002S an7002 CFM455BL
Text: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio • Overview Unit : mm 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 ICs incorporating AM tuner block to power amp. block • Low power consumption : 17mA at no signal • Built-in tuning indicator circuit
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AN7002K,
AN7002S
CFM455
AN700
AN7002K
mitsumi 455KHz filter
matsushita 455KHz ceramic filter
AM/Tuners
2SA952
AN7002S
an7002
CFM455BL
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mitsumi 455khz
Abstract: No abstract text available
Text: ICs for FM/AM Tuner AN7002K, AN7002S Single Chip ICs for AM Radio Unit : mm 22 21 20 19 18 17 16 15 14 13 12 M Di ain sc te on na tin nc ue e/ d 19.1±0.3 1 2 3 4 5 6 7 8 9 10 11 0.5±0.1 0.9±0.25 AN7002K The AN7002K and the AN7002S are the single chip ICs
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AN7002K,
AN7002S
AN7002K
AN7002S
AN7002K
mitsumi 455khz
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subwoofer PREAMP circuit diagram
Abstract: micronas uac 5.1 subwoofer ic type amplifier circuit diagram subwoofer preamp diagram subwoofer preamp 5.1 subwoofer amp 40 led VU-METER 32 led VU-METER uac 3556 3556B
Text: DATA SHEET MICRONAS Edition May 13, 2004 6251-544-2DS UAC 355xB Universal Serial Bus USB Codecs MICRONAS UAC 355xB DATA SHEET Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 7 7 7 7 7 9 9 10 10 10 10 10 10 11 11 11 11 11 12 12 12 12 13 14
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6251-544-2DS
355xB
subwoofer PREAMP circuit diagram
micronas uac
5.1 subwoofer ic type amplifier circuit diagram
subwoofer preamp diagram
subwoofer preamp
5.1 subwoofer amp
40 led VU-METER
32 led VU-METER
uac 3556
3556B
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2SC3773
Abstract: SANYO SS 1001
Text: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band
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n707b
2SC3773
1946B
2SC3773
SANYO SS 1001
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ao 5545
Abstract: 2SC4365 EN 3007 operation of ic 741
Text: Ordering num ber:EN 3007 No.3007 _ 2 S C 4 3 6 5 NPN Epitaxial Planar Silicon Transistor VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications i Features • Low-voltage operation : fr = 3.0GHz typ Vce = 3V : MAG=12dB typ (VCE = 3VfIc = 10mA)
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2SC4365
15VfIE
ao 5545
2SC4365
EN 3007
operation of ic 741
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2SA1815
Abstract: 2SC4432 MarKING JS transistor 2sA1815
Text: Ordering number: EN 4 6 2 5 2SA1815 PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amp, High-Frequency General-Purpose Amp Applications F eatures • High power gain : PG = 25dB typ f= 100MHz • High cutoff frequency : fr = 750MHz typ • Low collector-to-emitter saturation voltage.
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2SA1815
100MHz)
750MHz
2SC4432.
12VJe:
2SA1815
2SC4432
MarKING JS
transistor 2sA1815
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 55E 7cìeì707b O O O b á ñ 11 a D T - 31-15 2SC4407 NPN Epitaxial Planar Silico n Transistor 2059 VHF/UHF MIX, OSC Applications 2760 Applications • V H F/U H F m ixers, frequency converters, local oscillators Features f r = 3.0GHz typ
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2SC4407
2SC4407-applied
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2SC4364
Abstract: No abstract text available
Text: O rd e rin g n u m b e r :E N 3008 _ 2 S C 4 3 6 4 NPN Epitaxial Planar Silicon Transistor VHF. UHF/MIX. OSC. Low-Voltage High-Frequency Amp Applications Features • Low-voItage operation fr = 3.0GHztyp VCE:=3V MAG= lldB typ (VCE = 3V,IC= 3mA)
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2SC4364
2SC4364
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SANYO marking kf
Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Text: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band
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ssm2018
Abstract: SSM2110 PM7524 SSM2300 mix 2018
Text: PMÏ A * SK SSM-2018 VOLTAGE-CONTROLLED AMPLIFIER/OVCE ADVANCE PRODUCT INFORMATION FEATURES Combined with a PM-7524 DAC and SSM-2300 8-channel multiplexed sample-and-hold, the SSM-2018 enables the de sign of high performance fader automation systems with few
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SSM-2018
118dB
108dB
PM-7524
SSM-2300
SSM-2018
SSM-2110
SSM-2014.
ssm2018
SSM2110
PM7524
SSM2300
mix 2018
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES/ PM p PHI DIV „ m í f 1* £ 5bE D • DSlbSOS 'T-'M-os-oi ,JU&- Precision M onolithics Inc. SSM-2018 000810t 5 ■ VOLTAGE-CONTROLLED AMPLIFIER/OVCE ADVANCE PRODUCT INFORMATION FEATURES C o m b in e d with a P M - 7 5 2 4 D A C an d S S M - 2 3 0 0 8-channel
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SSM-2018
000810t
118dB
108dB
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A715S
Abstract: microprocessor 8051
Text: Philips Semiconductors Preliminary specification Back END 1C FEATURES • Line Flicker Reduction LFR by means of MEDIAN filtering • Vertical zoom • Digital colour transient improvement • Digital luminance peaking • Movie phase detection • 4:4:4 YUV data throughput
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SAA7158
SAA4951)
TMS4C2970
A715S
microprocessor 8051
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