PS21661-RZ
Abstract: PS21661 PS21661-FR 600V-3A
Text: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Single-In-Line <Single-In-Line Package Package Intelligent Intelligent Power Power Module> Module> PS21661-RZ/FR PS21661-RZ/FR TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21661-RZ
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PS21661-RZ/FR
PS21661-RZ
PS21661-FR
00V/3A
PS21661-RZ
PS21661
PS21661-FR
600V-3A
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DD15-DD0
Abstract: DD10 DD11 DD12 Mitsubishi flash card mitsubishi memory card
Text: MITSUBISHI STORAGE CARD FLASH DRIVES MF6128M-02BJxx MF6256M-02BJxx MF6512M-02BJxx MF6640M-02BJxx MF601G2-02BJxx 2.5" Flash Drive Connector Type IDE ATA 44-pin DESCRIPTION FEATURES • 2.5”, IDE ATA 44-pin • Single 5V Supply • Up to 1.2GB maximum • Nonvolatile, No Batteries Required
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MF6128M-02BJxx
MF6256M-02BJxx
MF6512M-02BJxx
MF6640M-02BJxx
MF601G2-02BJxx
44-pin
128MB,
256MB,
512MB,
DD15-DD0
DD10
DD11
DD12
Mitsubishi flash card
mitsubishi memory card
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DD10
Abstract: DD11 DD12 844Ah Mitsubishi flash
Text: MITSUBISHI STORAGE CARD FLASH DRIVES MF6128M-02CJxx MF6256M-02CJxx MF6512M-02CJxx MF6640M-02CJxx MF601G2-02CJxx 2.5" Flash Drive Connector Type IDE ATA 44-pin DESCRIPTION FEATURES • 2.5”, IDE ATA 44-pin • Single 5V Supply • Up to 1.2GB maximum • Nonvolatile, No Batteries Required
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MF6128M-02CJxx
MF6256M-02CJxx
MF6512M-02CJxx
MF6640M-02CJxx
MF601G2-02CJxx
44-pin
128MB,
256MB,
512MB,
DD10
DD11
DD12
844Ah
Mitsubishi flash
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DD10
Abstract: DD11 DD12
Text: MITSUBISHI STORAGE CARD Preliminary FLASH DRIVES MF6128M-02BJxx MF6256M-02BJxx MF6512M-02BJxx MF6640M-02BJxx MF601G2-02BJxx 2.5" Flash Drive Connector Type IDE ATA 44-pin DESCRIPTION FEATURES • 2.5”, IDE ATA 44-pin • Single 5V Supply • Up to 1.2GB maximum
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MF6128M-02BJxx
MF6256M-02BJxx
MF6512M-02BJxx
MF6640M-02BJxx
MF601G2-02BJxx
44-pin
128MB,
256MB,
512MB,
DD10
DD11
DD12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI STORAGE CARD Preliminary ATA PC CARDS 8/16-bit Data Bus MF0064M-07ATxx MF0128M-07ATxx MF0256M-07ATxx MF0512M-07ATxx MF0640M-07AFxx Flash ATA PC Card Connector Type Two-piece 68-pin DESCRIPTION FEATURES Mitsubishi’s Flash ATA cards provide large memory
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8/16-bit
MF0064M-07ATxx
MF0128M-07ATxx
MF0256M-07ATxx
MF0512M-07ATxx
MF0640M-07AFxx
68-pin
128MB,
256MB,
512MB
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1998J
Abstract: MF007M5-03BT
Text: MITSUBISHI STORAGE CARD ATA PC CARDS MF007M5-03BTxx MF0015M-03BTxx MF0030M-03BTxx MF0045M-03BTxx MF0060M-03BTxx MF0075M-03BTxx MF0090M-03BTxx MF0105M-03BFxx MF0120M-03BFxx 8/16-bit Data Bus Flash ATA PC Card Connector Type Two- piece 68-pin DESCRIPTION Mitsubishi’s Flash ATA cards provide large
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8/16-bit
MF007M5-03BTxx
MF0015M-03BTxx
MF0030M-03BTxx
MF0045M-03BTxx
MF0060M-03BTxx
MF0075M-03BTxx
MF0090M-03BTxx
MF0105M-03BFxx
MF0120M-03BFxx
1998J
MF007M5-03BT
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FET low noise
Abstract: No abstract text available
Text: ‘MITSUBISHI {DISCRETE SC} TÎ DE J b S M T Ö E i 0010173 7 M IT S U B IS H I SEM IC O N D U C T O R <GaAs FET> FA12203 6249829 MITSUBISHI DISCRETE SC 91D 10173 D T- 31-AS GaAs FET LOW NOISE AM PLIFIER MODULE D E S C R IP T IO N O U T L IN E D R A W IN G
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FA12203
31-AS
FA12203
FET low noise
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M5M482256
Abstract: 2097152-BIT
Text: M IT S U B IS H I LS Is M 5 M 4 8 2 2 5 6 J , T P , R T - 7 ,-8 ,- 1 0 FAST PAGE MODE 2097152-BIT DUAL-PORT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW M 5 M 482 256 J, TP, RT is a high speed 2097152-bit Dual-Port Vcc Dynamic Memory equipped w ith a 256K x 8 Dynamic RAM
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2097152-BIT
M5M482256J
M5M482256
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs TV M64898GP PLL FREQUENCY SYNTHESIZER WITH DC-DC CONVERTER FOR PC DESCRIPTION The M 64898G P is a sem iconductor integrated circuit consisting of PIN CONFIGURATION (TOP VIEW) PLL frequency synthesizer for TV/VCR /PC. It contains the prescaler with operating up to1,3G H z,4 band drivers
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M64898GP
64898G
270nA
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m5m4c264
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 C 2 6 4 L - 1 , - 1 2 , - 1 5 2 6 2 1 4 4 -B IT DUAL-PORT DYNAM IC RAM DESCRIPTIO N T h e M itsub ishi M 5 M 4 C 2 6 4 L is a high speed 2 6 2 ,1 4 4 -b it D ual P o rt D y n a m ic M e m o ry e q u ipped w ith a 6 4 K PIN C O N F IG U R A T IO N TOP VIEW
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MsM4c264
Abstract: mitsubishi deco M5M4C264L M5M4C264L-10 m5m4c264
Text: MITSUBISHI LSIs M 5 M 4 C 2 6 4 L - 1 , - 1 2 , - 1 5 2 6 2 1 4 4 -B IT DUAL-PORT DYNAM IC RAM D ESC RIPTIO N PIN C O N F IG U R A T IO N TOP V IE W T h e M its u b is h i M 5 M 4 C 2 6 4 L is a high speed 2 6 2 ,1 4 4 -b it D ual P o rt D y n a m ic M e m o ry e q u ipped w ith a 6 4 K
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M5M4C264L-10,
MsM4c264
mitsubishi deco
M5M4C264L
M5M4C264L-10
m5m4c264
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs P r e lim i n a r y S p e c MH1 V 6 4 5 C W X P J -6 ,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION T he 1 M x64bit m odule is 1 048576-w ord x 64-bit d ynam ic ram m odule. This consist of four Industry standard 1M x 16 d ynam ic
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4194304-BIT
1048576-BIT
64-BIT)
x64bit
048576-w
64-bit
24/Mar
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T3D 1N
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.5±0.1 1 . 6 ± 0.2 1 J r iin n ln t: 0 .5 ± 0 .0 7 \— \ 0 .4 ± 0 .0 7 -h i p1.5±0.1 1.5±0.1
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CR05AS
00V/400V
T3D 1N
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2SC1970
Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7
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2SC1970
2SC1970
2sc1970 transistor
T-30
parameters S transistor NPN
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MITSUBISHI ipm MODULES ps
Abstract: No abstract text available
Text: MITSUBISHI INTELLIGENT POWER MODULES PM100CVA120 FLAT-BASE TYPE INSULATED PACKAGE T E R M IN A L C O D E 1. W fo 11. U p 2. V wpc 12. V u pi 3. W p 13. N C 4. V w p i 14. Fo 5. V fo 15. V N C 6. V vpc 16. VN1 7. V p 17. UN 8. V v p i 18. VN 9. U fo 19. W N
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PM100CVA120
MITSUBISHI ipm MODULES ps
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> P B E V -' M G FC 40V 7785A \\ sp«“'-' are 5 7«7 8 .5G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 A ts a n internally im pedance-m atched GaAs power FET especially designed fo r use in 7 .7 —8 .5
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.
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GG1SE71
2SC2797
2SC2797
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5M41000BJ
Abstract: MH1M09B0J-7 41000BJ
Text: MITSUBISHI LSIs M HlM 09B0J-7,-8,-10/ MH1M09B0J A-7,-8, -10 FAST PAGE MODE 1048576-W 0R D BY 9-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW The M H 1M 09B0J, JA is 1048576 word x 9 b it dynamic RAM and consists o f nine industry standard 1M x 1 d y
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09B0J-7
MH1M09B0J
048576-W
09B0J,
M5M41GG0BJ
M5M41000BJ
5M41000BJ
10/MH1M09B0JA-7
MH1M09B0J-7,
5M41000BJ
MH1M09B0J-7
41000BJ
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5964a
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964A p R tU o< a R ^ubiC‘: 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 0 V 5 9 6 4 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 5 . 9 — 6 ,4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI M EM ORY CARD D Y N A M I C R A M CARDS 1x512/ x32M DRAM Card 2x512/Oc326/i DRAM Card M F12M 1-L57A TXX" M F14M 1-L57ATXX Connector Type Two-piece 88-pin S D E S C R IP T IO N These DRAM • Extend CARDs are developed based on refresh mode is available. ( 1 2 8 m s / 1024
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1x512/
2x512/Oc326/i
1-L57ATXX"
1-L57ATXX
88-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE j QM300HC-M i ! ! IC Collector c u rre n t.300A ; Vcex C ollector-em itter v o lta g e . 350V ! tiFE DC current g a in .100 *
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QM300HC-M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is {DRAM MODULE MH16M36BJ-5,-6,-7/ MH16M36BNJ-5,-6,-7 FAST PAGE MODE 603979776-BIT 16777216-WORD BY 36-BIT) DYNAMIC RAM DESCRIPTION The M H16M 36BJ/BNJ is 16777216-word by 36-bit dynamic RAM module. That module consists of nine industry standard
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MH16M36BJ-5
MH16M36BNJ-5
603979776-BIT
16777216-WORD
36-BIT)
36BJ/BNJ
36-bit
MH16M36BJ/BNJ-5
MH16M36BJ/BNJ-6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs D VÌ M p B tl 5 M 4 V 1 7 4 0 5 C J ,T P - 5 ,- 6 ,- 7 , - 5 S ,- 6 S ,- 7 S HYPER PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM D E SC R IP TIO N PIN C O N F IG U R A T IO N (T O P V IEW ) This is a family of 4194304-word by 4-bit dynamic RAMs with
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16777216-BIT
4194304-WORD
M5M4V17405CJ
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2SC1324
Abstract: 470M
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 1324 is a silicon NPN epitaxial planar type transistor designed D im e n s io n s in m m fo r industrial use RF broadband amplifiers from V H F to UHF band.
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2SC1324
2SC1324
y22el
470M
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