IEGT
Abstract: HIGH VOLTAGE 3.3kv mosfet Brunner vertical mosfet scsoa JF-25 3.3kv diode 600V GaN mitsubishi igbt cm
Text: IGBT Module Chip Improvements for Industrial Motor Drives John F. Donlon Katsumi Satoh Powerex, Inc. 173 Pavilion Lane Youngwood, PA USA Mitsubishi Electric Corporation Power Semiconductor Device Works Fukuoka JAPAN Abstract—Since the introduction of the IGBT module,
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mitsubishi PM20CSJ060
Abstract: mitsubishi PM30CSJ060 Mitsubishi Electric IGBT MODULES Mitsubishi IPM module PS11015 mitsubishi power Modules PM30ctj060-3 m57962l M57959L/M57962L pm25rsb120
Text: Power Modules Power Modules MOS Power Modules BIPOLAR Preceding Page MITSUBISHI ELECTRIC CORPORATION Power Modules MOS Guidance IGBT Modules CIB Converter Inverter Brake Modules Intelligent Power Modules (IPMs) Hybrid ICs Applications Preceding Page © MITSUBISHI ELECTRIC CORPORATION
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RM50DA/CA/C1A-XXS
RM25HG-24S
RM400HA-24S
RM35HG-34S
RM400HV-34S
RM300CA-9W
RM60SZ-6S
RM100SZ-6S
RM10TN-H
mitsubishi PM20CSJ060
mitsubishi PM30CSJ060
Mitsubishi Electric IGBT MODULES
Mitsubishi IPM module
PS11015
mitsubishi power Modules
PM30ctj060-3
m57962l
M57959L/M57962L
pm25rsb120
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cm500ha-34a
Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
Text: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using
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CM3600HC-34N
Abstract: CM1200DC-34N CM2400HC-34H 600A 500v igbt CM1600HC-34H CM1200E4C-34N CM1800HC-34H CM1800HC-34N CM2400HC-34N CM600DY-34H
Text: New 1700V IGBT Modules with CSTBT and Improved FWDi 1 1 2 2 3 3 John Donlon , Eric Motto , Shinichi Iura , Eisuke Suekawa , Kazuhiro Morishita , Masuo Koga 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan
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PCIM 96
Abstract: mitsubishi igbt cm
Text: New 1.7kV IGBT Chip with Fine Pattern and Optimized Buffer Layer John F. Donlon, Eric R. Motto K. Satoh, K. Suzuki, Y. Yoshihiura, T. Takahashi Powerex, Inc. 173 Pavilion Lane Youngwood, PA 15697 USA Mitsubishi Electric Corporation 1-1-1Imajukuhigashi Nishi-ku
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Untitled
Abstract: No abstract text available
Text: Press Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Werner Obermaier Phone: +49 (0)89 878067-143 wobermaier@vincotech.com NEW MiniSKiiP PIM MODULES WITH MITSUBISHI IGBTs
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Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Koichi Tsurusako Phone: +49 89 8780 67-155 koichi.tsurusako@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com NEW MiniSKiiP 3 PACK MODULES WITH MITSUBISHI IGBTs
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Mitsubishi Electric IGBT MODULES
Abstract: transistor free CM600DY-24NF mitsubishi j 170 a ignition module igbt welding machine scheme 37Kw motor CM600DU-12F CM600DY-24A calculation of IGBT snubber CM300DY-24NF
Text: IGBT Modules Application Note The 5 t h Generation [ CSTBT TM ] IGBT C hip use 12NF/24NF/24A series Dec. 2007 Notice for Safe Designs •Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is
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12NF/24NF/24A
10kHz.
Mitsubishi Electric IGBT MODULES
transistor free
CM600DY-24NF
mitsubishi j 170 a ignition module
igbt welding machine scheme
37Kw motor
CM600DU-12F
CM600DY-24A
calculation of IGBT snubber
CM300DY-24NF
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M57962AL
Abstract: IPM Inverter vla531 VLA500-01R M57962 PM200CL1A120 VLA502 MITSUBISHI ipm MODULES ps IGBT 600V 12A VLA500K-01R
Text: IGBT gate drivers DC-DC converters Apr. 2010 PoWer Module Division ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 1 /30 Pre-regulator AC200V or AC440V RECTIFIER VLA31X Isolated DC-DC converter IGBT driver VLA106 VLA503 VLA106 VLA503 VLA106 IGBT Module
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AC200V
AC440V
VLA106
VLA31X
VLA503
M57962AL
IPM Inverter
vla531
VLA500-01R
M57962
PM200CL1A120
VLA502
MITSUBISHI ipm MODULES ps
IGBT 600V 12A
VLA500K-01R
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POWEREX DIP-IPM
Abstract: PS22056 DIP-IPM SCHEMATIC POWER SUPPLY WITH IGBTS IPM module IEC664-1 PS22052 Mitsubishi Electric IGBT MODULES ipm first igbtmod mitsubishi
Text: A 1200V Transfer Molded DIP-IPM Eric Motto*, John Donlon*, Mitsutaka Iwasaki*,Kazuhiro Kuriaki*, Hiroshi Yoshida*, Kazunari Hatade* * Power Device Division, Mitsubishi Electric Corp. Fukuoka Japan *Powerex Incorporated, Youngwood, PA USA I. INTRODUCTION
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380-460VAC
POWEREX DIP-IPM
PS22056
DIP-IPM
SCHEMATIC POWER SUPPLY WITH IGBTS
IPM module
IEC664-1
PS22052
Mitsubishi Electric IGBT MODULES
ipm first
igbtmod mitsubishi
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SCHEMATIC 10kw POWER SUPPLY WITH IGBTS
Abstract: PS21967 POWEREX DIP-IPM PS21961 INVERTER 10kW SCHEMATIC 10kw inverter PCIM 96 schematic diagram inverter 100w free ac Inverter ipm mitsubishi dip ipm 2001
Text: Latest Progress in Power Modules for Appliance Inverter Applications E. Motto*, J. Donlon*, Shinya Shirakawa*, Toru Iwagami*, Hisashi Kawafuji*, Mamoru Seo*, Katsumi Satou* * Powerex Incorporated, Youngwood, Pennsylvania, USA * Power Device Works, Mitsubishi Electric Corporation, Fukuoka, Japan
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m57962l
Abstract: gate drive circuit for igbt IGBT gate drive board "Power Semiconductor Applications" M57962L MITSUBISHI HYBRID Power Semiconductor Applications igbt driver M57145L-01 M57160AL BG1A-KA
Text: Powerex Product Development Kits: BG1A-KA Powerex launched its Product Development Kit program to help customers speed up their IGBT gate drive designs. The kits include samples of Powerex hybrid gate drivers, dc-dc converters, a prototype PC board, along with technical literature recommending all
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M57145L
M57145L-01
M57962L
m57962l
gate drive circuit for igbt
IGBT gate drive board
"Power Semiconductor Applications"
M57962L MITSUBISHI HYBRID
Power Semiconductor Applications
igbt driver
M57145L-01
M57160AL
BG1A-KA
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m57962l
Abstract: M57959L/M57962L m57959l gate drive circuit for igbt IGBT gate drive board M57962L MITSUBISHI HYBRID Mitsubishi Electric IGBT MODULES M57160AL M57962 M57145L-01
Text: Powerex Product Development Kits: BG2B-KA Powerex launched its Product Development Kit program to help customers speed up their IGBT gate drive designs. The kits include samples of Powerex hybrid gate drivers, dc-dc converters, a prototype PC board, along with technical literature
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M57145L-01
M57145L-01
M57962L
m57962l
M57959L/M57962L
m57959l
gate drive circuit for igbt
IGBT gate drive board
M57962L MITSUBISHI HYBRID
Mitsubishi Electric IGBT MODULES
M57160AL
M57962
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PS22A76
Abstract: PS22A74 DIP-IPM POWEREX DIP-IPM ps21a79 resin compound to247 PS21a ps22a73 mini inverter circuit schematic diagram PS22A78E
Text: Large Package Transfer Molded DIP-IPM E. Motto*, J. Donlon*, Ming Shang*, Kazuhiro Kuriaki*, Toru Iwagami*, Hisashi Kawafuji*, Toshiya Nakano* * Powerex Incorporated, Youngwood, Pennsylvania, USA * Power Device Works, Mitsubishi Electric Corporation, Fukuoka, Japan
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Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com NEW HIGH-SPEED, IGBT-BASED H-BRIDGE MODULE BUILT TO BOOST PERFORMANCE
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Untitled
Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-142 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com VINCOTECH RELEASES NEW MODULES FOR SINGLE-PHASE SOLAR INVERTERS
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IGBT tail time
Abstract: igbt simulation NATIONAL IGBT local lifetime IGBT cross IGBT PNP Semiconductor Group igbt mitsubishi igbt cm
Text: 168 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 38, NO. 1, JANUARY/FEBRUARY 2002 A New Punch-Through IGBT Having a New n-Buffer Layer Hideo Iwamoto, Hideki Haruguchi, Yoshifumi Tomomatsu, John F. Donlon, Senior Member, IEEE, and Eric R. Motto, Member, IEEE
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200-V
IGBT tail time
igbt simulation
NATIONAL IGBT
local lifetime
IGBT cross
IGBT PNP
Semiconductor Group igbt
mitsubishi igbt cm
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Untitled
Abstract: No abstract text available
Text: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com VINCOTECH RELEASES NEW MODULES FOR SINGLE-PHASE SOLAR INVERTERS
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SGCT
Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Text: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H
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CM800HA34H
CM1200HA-
CM1600HC-
CM1800HC34H
CM800HB50H
CM1200HD50H
CM800HB66H
CM1200HB66H
CM400HB-
CM600HB90H
SGCT
mitsubishi SGCT
scr gate driver ic 600 A
igbt types 6000v
MITSUBISHI GATE TURN-OFF THYRISTOR scr
GTO thyristor driver
m57962l
GTO thyristor 1200V 50A
SGCT 400A
NATIONAL IGBT
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power IGBT MOSFET transistor GTO SCR di
Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power
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CM750HG-130R
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM750HG-130R z z z z z z IC•····························································
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CM750HG-130R
HVM-1058-B)
CM750HG-130R
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Untitled
Abstract: No abstract text available
Text: < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HC-90R IC •···············································································800A
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CM800HC-90R
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Untitled
Abstract: No abstract text available
Text: QID3320002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT HVIGBT Module 200 Amperes/3300 Volts S NUTS (3TYP) A D F C J (2TYP) N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING
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QID3320002
Amperes/3300
125nH.
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D 1062 transistor
Abstract: HVM-1062
Text: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY
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CM800HG-90R
HVM-1062
D 1062 transistor
HVM-1062
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