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    MITSUBISHI IGBT 100A Search Results

    MITSUBISHI IGBT 100A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    MITSUBISHI IGBT 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    calculation of IGBT snubber

    Abstract: darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel


    Original     		PDF 00V/100A calculation of IGBT snubber darlington pair MODULE 200A RC VOLTAGE CLAMP snubber circuit ipm darlington RCD snubber mitsubishi semiconductors power modules mos IGBT snubber mitsubishi semiconductors inverter power modules CM100DY-24H inverter circuit using IGBT module

    V23990-k438

    Abstract: No abstract text available
    Text: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering


    Original     		PDF 20-to-70 37NAB12T4V1 38NAB12T4V1 V23990-K438-F60-PM 37AC12T4V1 V23990-K439-F60-PM 38AC12T4V1 V23990-K430-F60-PM 39AC12T4V1 Oct-14 V23990-k438

    CM100RX-24A

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake


    Original     		PDF CM100RX-24A CM100RX-24A

    Vn36

    Abstract: CM100RX-24A
    Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake


    Original     		PDF CM100RX-24A 48K/W Vn36 CM100RX-24A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake


    Original     		PDF CM100RX-12A 85K/W

    DIODE EVP 28

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake


    Original     		PDF CM100RX-12A DIODE EVP 28

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake


    Original     		PDF CM100RX-24A

    DIODE T25

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake


    Original     		PDF CM100RX-12A 85K/W DIODE T25

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­


    OCR Scan     		PDF CM100E3U-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100E3U-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­


    OCR Scan     		PDF CM100E3U-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50E3U-24H MEDIUM POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT having a reverse-connected super-fast recovery free-wheel di­


    OCR Scan     		PDF CM50E3U-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM50TF-28H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50DY-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge con­ figuration with each transistor hav­


    OCR Scan     		PDF CM50DY-12H -100A/

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM100TU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM100TF-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM100TU-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM50TU-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


    OCR Scan     		PDF CM50TF-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having


    OCR Scan     		PDF CM50DY-28H

    CM100DY-24H

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having a


    OCR Scan     		PDF CM100DY-24H -200A/ CM100DY-24H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­ figuration, w ith each transistor


    OCR Scan     		PDF CM100TF-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having a


    OCR Scan     		PDF CM100DY-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of four IGBTs in an H-Bridge configura­ tion, with each transistor having a


    OCR Scan     		PDF CM100BU-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM100DU-24H -200A/