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    Free-Tool-Download-EZ-0005-EZ-0006 Renesas Electronics Corporation EZ-0005, EZ-0006 Evaluation Boards Visit Renesas Electronics Corporation

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    AN1232

    Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
    Text: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical


    Original     		PDF AN1232 AN1232 RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921

    AN1232

    Abstract: transistor working SD2921 rf power transistor
    Text: AN1232 APPLICATION NOTE RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES A. Grimaldi - A. Schillaci - A. Vitanza - E. Romano 1. ABSTRACT RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent


    Original     		PDF AN1232 AN1232 transistor working SD2921 rf power transistor

    EL7155C

    Abstract: EL7155CN EL7155CS
    Text: High-Performance Pin Driver Features General Description • Clocking speeds up to 40 MHz • 15ns tr/tf at 2000 pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak drive


    Original     		PDF EL7155C EL7155CN EL7155CS

    AN1008

    Abstract: No abstract text available
    Text: AN1008 APPLICATION NOTE Address Pin Labeling Mismatch The purpose of this application note is to discuss differences between SRAM vendors’ package pinouts. This paper will focus specifically on Address pins and will investigate whether the labeling mismatch between vendors will make one vendor's part


    Original     		PDF AN1008 AN1008

    EL7155C

    Abstract: EL7156C EL7156CN EL7156CS EL7156
    Text: High Performance Pin Driver Features General Description • Clocking speeds up to 40 MHz • 15ns tr/tf at 2000 pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak drive


    Original     		PDF EL7156C EL7155C EL7156CN EL7156CS EL7156

    EL7155C

    Abstract: EL7156C EL7156CN EL7156CS EL7156CS-T13 EL7156CS-T7 JESD51-3 EL7156
    Text: EL7156C EL7156C High Performance Pin Driver Features General Description • Clocking Speeds up to 40MHz • 15ns tr/tf at 2000pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak Drive


    Original     		PDF EL7156C 40MHz 2000pF EL7156C EL7155C EL7156CN EL7156CS EL7156CS-T13 EL7156CS-T7 JESD51-3 EL7156

    EL7155C

    Abstract: EL7155CN EL7155CS EL7155CS-T13 EL7155CS-T7 JESD51-3
    Text: EL7155C EL7155C High-Performance Pin Driver Features General Description • Clocking Speeds up to 40MHz • 15ns tr/tf at 2000pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak Drive


    Original     		PDF EL7155C 40MHz 2000pF EL7155C EL7155CN EL7155CS EL7155CS-T13 EL7155CS-T7 JESD51-3

    Untitled

    Abstract: No abstract text available
    Text: High-Performance Pin Driver Features General Description • Clocking speeds up to 40 MHz • 10 ns tr/tf at 1800 pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.6ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak drive


    Original     		PDF EL7155C EL7155

    adaptive filter noise cancellation

    Abstract: 0A80 1D20 2A21 2B39 modem circuit echo
    Text: Am79C02/03/031 DSLAC Devices Adaptive Balance Feature Application Note The cause of four-wire echo in subscriber linecards is the mismatch of the two-wire impedances and the echo balance circuit. Because of the mismatch, much of the energy from the received signal is


    Original     		PDF Am79C02/03/031 adaptive filter noise cancellation 0A80 1D20 2A21 2B39 modem circuit echo

    LT5517

    Abstract: LT5517EUF MABAES0054 MO-220 06033A102JAT1A 06033A3R3KAT2A MAG CS2 EMK107B LT5503
    Text: LT5517 40MHz to 900MHz Quadrature Demodulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7°


    Original     		PDF LT5517 40MHz 900MHz 21dBm 800MHz 58dBm LT5517 LT5517EUF MABAES0054 MO-220 06033A102JAT1A 06033A3R3KAT2A MAG CS2 EMK107B LT5503

    327-40

    Abstract: EPG 20 how to make echo circuit adaptive filter noise cancellation 0A80 1D20 2A21 2B39 modem circuit echo
    Text: Am79C02/03/031 DSLAC Devices Adaptive Balance Feature Application Note Advanced Micro Devices The cause of four-wire echo in subscriber linecards is the mismatch of the two-wire impedances and the echo balance circuit. Because of the mismatch, much of the energy from the received signal is


    Original     		PDF Am79C02/03/031 327-40 EPG 20 how to make echo circuit adaptive filter noise cancellation 0A80 1D20 2A21 2B39 modem circuit echo

    LT5503

    Abstract: No abstract text available
    Text: LT5517 40MHz to 900MHz Quadrature Demodulator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7°


    Original     		PDF LT5517 40MHz 900MHz 21dBm 800MHz 58dBm LT5503

    MBH100

    Abstract: SOT122A BLX94C
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch


    Original     		PDF BLX94C SC08b OT122A MBH100 SOT122A BLX94C

    BLX94C

    Abstract: MBH100 BLX94
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended


    Original     		PDF BLX94C OT122A OT122A BLX94C MBH100 BLX94

    Untitled

    Abstract: No abstract text available
    Text: AWT6166 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm


    Original     		PDF AWT6166 GSM850/GSM900/DCS/PCS -GSM850, -GSM900, GSM850/900 AWT6166

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF241 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BLF241 7Z21747

    2N6364

    Abstract: UHF TRANSISTOR 100-400MHz
    Text: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:


    OCR Scan     		PDF 2N6364 2N6364 100400Mhz OT-161 UHF TRANSISTOR 100-400MHz

    2N6362

    Abstract: 100-400MHz
    Text: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:


    OCR Scan     		PDF 2N6362 2N6362 100400Mhz OT-161 32flfl2T2 100-400MHz

    Philips 4312 020

    Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar
    Text: 711002b Q O b E b m PHILIPS INTERNATIONAL UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. IPHIN 0G1 Product specification


    OCR Scan     		PDF 711002b BLT53 OT122 OT122D MCD200 MCD20 Philips 4312 020 ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar

    2N6364

    Abstract: 75W NPN 100-400MHz 2N636
    Text: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:


    OCR Scan     		PDF 2N6364 2N6364 100400Mhz OT-161 75W NPN 100-400MHz 2N636

    100-400MHz

    Abstract: 2N6362 UHF TRANSISTOR
    Text: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:


    OCR Scan     		PDF 2N6362 2N6362 100400Mhz OT-161 32flfl2T2 100-400MHz UHF TRANSISTOR

    BJE 148 capacitor

    Abstract: A213 SOT122A BJE 147
    Text: N AUER PHILIPS/DISCRETE bbSa'm b'JE D ÜD2Ô7T5 BLU10/12 UHF power transistor FEATURES • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. E OT • QUICK REFERENCE DATA


    OCR Scan     		PDF BLU10/12 OT122 -SOT122A UEA210 BJE 148 capacitor A213 SOT122A BJE 147

    uA740

    Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
    Text: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N


    OCR Scan     		PDF OT123 BLF225 GG437S7 T-31-U OT123 handlinLF225 110fl2b 0437b5 M8A379 uA740 PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S

    transistor tt 2222

    Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
    Text: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.


    OCR Scan     		PDF T-37-IÃ BLF145 OT123 OT123 711002b MBB072 4-J11 9-j14 5-j15 transistor tt 2222 TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package