Option Information
Abstract: No abstract text available
Text: Work-In-Progress Option Information www.vishay.com Vishay Siliconix MIL-PRF-38535 Class Level B Process Flow MIL-STD-883/M5004 INTERNAL VISUAL METHOD 2010 CONDITION B TEMP CYCLE METHOD 1010 CONDITION C CONSTANT ACCELERATION METHOD 2001 CONDITION E PRE-BURNIN ELECTRICAL
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MIL-PRF-38535
MIL-STD-883/M5004)
HETD-883/M5004)
28-Apr-15
Option Information
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no-go
Abstract: No abstract text available
Text: HVCMOS IC Process Option Flows RB PRODUCT FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) RC PRODUCT FLOW COMMERICAL PRODUCT FLOW Preseal Visual Method 2010, Condition B Preseal Visual Method 2010, Condition B Temperature Cycle (2) Method 1010, Condition C, 10 Cycles, -65°C to + 150°C
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MIL-STD-883
MIL-STD-883.
MIL-STD-883
no-go
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method d 1071
Abstract: LTPD
Text: DMOS Process Option Flow Chart DMOS ARRAY RB FLOW 1 (SIMILAR TO MIL-STD-883 CLASS B) Preseal Visual Method 2010, Condition B Temperature Cycle Method 1010, Condition C, 10 Cycles, -65°C to +150°C 10 minutes minimum @ each temperature extreme Constant Acceleration
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MIL-STD-883
MIL-STD-750
MIL-STD-750
method d 1071
LTPD
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MSK PRODUCT COMPARISON CHART
Abstract: No abstract text available
Text: MSK PRODUCT COMPARISON CHART Test Flow or Requirement MIL-STD-883 Test Method Certification Qualification QML Listing No Element Evaluation Clean Room Processing Ultrasonic Inspection, TM 2030 Wirebond Process Control No Yes A/R Yes Hermetic Class H Yes
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MIL-STD-883
MSK PRODUCT COMPARISON CHART
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Sharp Semiconductor Lasers
Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Text: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical
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MIL-STD-883
SMA04033
Sharp Semiconductor Lasers
AU4A
transistor QB
tensile-strength
thermopile array
BREAK FAILURE INDICATOR APPLICATIONS LIST
relay failure analysis
CRACK DETECTION PATTERNS
gold wire bound failures due to ultrasonic cleaning
2n2222 micro electronics
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Untitled
Abstract: No abstract text available
Text: T5621, T5622, T5623, T5624 T5721, T5722, T5723, T5724 5X7 mm Surface Mount High Reliability Tristate/Non-Tristate, 16 KHz to 150MHz ELECTRICAL SPECIFICATIONS Frequency Range Fixed Output ENVIRONMENTAL SPECIFICATIONS Shock-MIL-STD 883, Method 2002, Test Condition B 1500 peak g, 0.5 ms duration, ½
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T5621,
T5622,
T5623,
T5624
T5721,
T5722,
T5723,
T5724
150MHz
20-2000Hz
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16646
16-BIT
SCES032F
MIL-STD-883,
300-mil
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MO-194
Abstract: MPDS006C SN74ALVCH16646
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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MIL-STD-883,
300-mil
16-bit
SN74ALVCH16646
MO-194
MPDS006C
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MO-194
Abstract: MPDS006C SN74ALVC14
Text: SN74ALVC14 HEX SCHMITT-TRIGGER INVERTER SCES107E – JULY 1997 – REVISED AUGUST 1999 D D D D EPIC Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVC14
SCES107E
MIL-STD-883,
MO-194
MPDS006C
SN74ALVC14
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74ALVCH16952DGGG4
Abstract: 8C12 EN10 SN74ALVCH16952
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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MIL-STD-883,
300-mil
16-bit
SN74ALVCH16952
74ALVCH16952DGGG4
8C12
EN10
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8C12
Abstract: EN10 MPDS006C SN74ALVCH16952
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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MIL-STD-883,
300-mil
16-bit
SN74ALVCH16952
8C12
EN10
MPDS006C
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16646
16-BIT
SCES032F
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16952
16-BIT
SCES011E
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16952
16-BIT
SCES011E
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16646
16-BIT
SCES032F
MIL-STD-883,
300-mil
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74ALVCH16646DGGRE4
Abstract: 74ALVCH16646DGVRE4 74ALVCH16646DLG4 74ALVCH16646DLRG4 SN74ALVCH16646
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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MIL-STD-883,
300-mil
16-bit
SN74ALVCH16646
74ALVCH16646DGGRE4
74ALVCH16646DGVRE4
74ALVCH16646DLG4
74ALVCH16646DLRG4
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74ALVCH16952DGGRG4
Abstract: 8C12 EN10 SN74ALVCH16952
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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MIL-STD-883,
300-mil
16-bit
SN74ALVCH16952
74ALVCH16952DGGRG4
8C12
EN10
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74ALVCH16646DGGRE4
Abstract: 74ALVCH16646DGGRG4 74ALVCH16646DGVRE4 74ALVCH16646DGVRG4 SN74ALVCH16646
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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MIL-STD-883,
300-mil
16-bit
SN74ALVCH16646
74ALVCH16646DGGRE4
74ALVCH16646DGGRG4
74ALVCH16646DGVRE4
74ALVCH16646DGVRG4
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16646
16-BIT
SCES032F
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16952
16-BIT
SCES011E
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16952
16-BIT
SCES011E
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16646
16-BIT
SCES032F
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
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SN74ALVCH16952
16-BIT
SCES011E
MIL-STD-883,
300-mil
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Untitled
Abstract: No abstract text available
Text: SN74ALVCH16721 3.3-V 20-BIT FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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SN74ALVCH16721
20-BIT
SCES052E
MIL-STD-883,
300-mil
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