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    MIG10J504H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MIG10J504H Mitsubishi High Side Driver Power Supply Original PDF
    MIG10J504H Toshiba Intelligent IGBT Module Original PDF

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    MIG10J504H

    Abstract: No abstract text available
    Text: MIG10J504H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J504H Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.


    Original     		PDF MIG10J504H MIG10J504H

    TOSHIBA IGBT DATA BOOK

    Abstract: MIG10J504H
    Text: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •


    Original     		PDF MIG10J504H TOSHIBA IGBT DATA BOOK MIG10J504H