MIG10J503H
Abstract: No abstract text available
Text: MIG10J503H MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503H MIG10J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG10J503H
MIG10J503H
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MIG10J503L
Abstract: No abstract text available
Text: MIG10J503L TOSHIBA Intelligent Power Module MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG10J503L
MIG10J503L
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MIG10J503L
Abstract: No abstract text available
Text: MIG10J503L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG10J503L MIG10J503L is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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MIG10J503L
MIG10J503L
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MIG10J503H
Abstract: MIG10J503 300VVcc
Text: MIG10J503H TOSHIBA Intelligent Power Module MIG10J503H MIG10J503H is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI
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Original
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MIG10J503H
MIG10J503H
MIG10J503
300VVcc
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MIG10J503
Abstract: Toshiba confidential FRD CV Tentative
Text: TENTATIVE MIG10J503 TOSHIBA INTELLIGENT POWER MODULE MIG10J503 MIG10J503 is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI silicon-on-insulator
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MIG10J503
MIG10J503
Toshiba confidential
FRD CV
Tentative
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MIG20J503L
Abstract: LNA bluetooth TC59LM818DMB TG2210FT TG2211FT TG2213S TG2214S TG2216TU mig20j503h MIG15J503L
Text: 東芝半導体情報誌アイ 2002年12月号 II N N FF O O RR M M AA TT II O ON N 1 米国サンディスクと90ナノメートルNAND型 フラッシュメモリ・プロセス技術を共同開発 4Gb NAND型フラッシュメモリも開発 当社はNAND型フラッシュメモリの供給能力増大と競争力強化を図るため、
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70nm55nm
TC59LM818DMB
400MHz
13mFCRAM
400m2
200m2
MIG20J503L
LNA bluetooth
TC59LM818DMB
TG2210FT
TG2211FT
TG2213S
TG2214S
TG2216TU
mig20j503h
MIG15J503L
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