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    MICROWAVE SEMICONDUCTORS CORP Search Results

    MICROWAVE SEMICONDUCTORS CORP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE SEMICONDUCTORS CORP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power transistors table

    Abstract: LBE2003S LBE2009S
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors Product specification Supersedes data of 1997 Mar 03 1998 Feb 16 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES


    Original     		PDF LBE2003S; LBE2009S LBE2003S LBE2009S SCA57 125108/00/03/pp16 power transistors table

    equivalent of SL 100 NPN Transistor

    Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D159 LLE18040X SCA63 125002/00/02/pp12 equivalent of SL 100 NPN Transistor TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR

    philips ferrite 4b1

    Abstract: 12NC philips BDT91 BY239 LLE18300X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18300X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18300X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D159 LLE18300X SCA63 125002/00/03/pp12 philips ferrite 4b1 12NC philips BDT91 BY239 LLE18300X

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    BP317

    Abstract: RZ1214B65Y L-Band
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A


    Original     		PDF M3D034 RZ1214B65Y OT443A 125002/03/pp8 BP317 RZ1214B65Y L-Band

    865 RF transistor

    Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm


    Original     		PDF SC19a OT96-1 OT502A 865 RF transistor RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A


    Original     		PDF M3D034 RZ1214B65Y OT443

    BLS3135-50

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1998 Apr 06 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A


    Original     		PDF M3D259 BLS3135-50 OT422A 125002/02/pp8 BLS3135-50 BP317

    BLS3135-65

    Abstract: MCD750
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product specification Supersedes data of 1999 May 01 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-65 FEATURES PINNING - SOT422A


    Original     		PDF M3D259 BLS3135-65 OT422A 125002/02/pp12 BLS3135-65 MCD750

    BLS3135-10

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS3135-10 OT445C 603516/01/pp12 BLS3135-10

    BLS3135-20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A • Suitable for short and medium pulse applications


    Original     		PDF M3D259 BLS3135-20 OT422A 603516/01/pp12 BLS3135-20

    TEKELEC 297

    Abstract: BD239 BY239 LXE18400X IC 3263
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D039 LXE18400X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D039 LXE18400X SCA63 125002/00/02/pp12 TEKELEC 297 BD239 BY239 LXE18400X IC 3263

    BLS2731-20

    Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-20 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS2731-20 OT445C SCA60 125108/00/04/pp8 BLS2731-20 RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number

    BLS2731-10

    Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-10 Microwave power transistor Product specification Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product specification Microwave power transistor BLS2731-10 PINNING - SOT445C FEATURES • Suitable for short and medium pulse applications


    Original     		PDF M3D324 BLS2731-10 OT445C SCA60 125108/00/04/pp12 BLS2731-10 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ

    LBE2003S

    Abstract: LBE2009S LCE2009S SC15
    Text: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15

    JS9P04-AS

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •HIGH POWER P1dB=26. OdBm @ f = 38GHz ■CHIP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point


    OCR Scan     		PDF JS9P04-AS 38GHz 38GHz JS9P04-AS

    JS9P05-AS

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •HIG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF JS9P05-AS 28dBm 38GHz JS9P05-AS

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF 28dBm JS9P05-AS 38GHz

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P04-AS FEATURES: •H IG H POWER P1dB= 26. OdBm ■C H IP FORM IH IG H GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point


    OCR Scan     		PDF 38GHz JS9P04-AS

    A1203

    Abstract: JS9P10-AS
    Text: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P10-AS FEATURES: •H IG H IHIGH GAIN pow er P1dB = 24.0 dBm G1dB = 9.5 dB @ f = 28 GHz f = 28 GHz ■C H IP FORM RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		PDF JS9P10-AS A1203 JS9P10-AS

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P03-AS TECHNICAL DATA FEATURES: •H IG H POWER P1dB= 23. OdBm @ f = 38GHz ■C H IP FORM B H IG H GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		PDF 38GHz JS9P03-AS 38GHz 150mA

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P03-AS TECHNICAL DATA FEATURES: •H IG H POWER P1dB= 23. OdBm @ f = 38GHz ■C H IP FORM B H IG H GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		PDF 38GHz JS9P03-AS 38GHz 150mA

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P03-AS TECHNICAL DATA FEATURES: •H IG H POWER P1dB= 23. OdBm @ f = 38GHz ■C H IP FORM B H IG H GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB


    OCR Scan     		PDF JS9P03-AS 38GHz 150mA

    JS9P04-AS

    Abstract: No abstract text available
    Text: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA FE A TU R E S : •H IG H POWER P1dB= 26. OdBm ■C H IP FORM JS9P04-AS IHIGH GAIN GldB= 6. 5dB f = 38GHz RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point


    OCR Scan     		PDF JS9P04-AS 38GHz JS9P04-AS