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    MICROWAVE POWER AMPLIFIER MMIC 2.6 GHZ Search Results

    MICROWAVE POWER AMPLIFIER MMIC 2.6 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE POWER AMPLIFIER MMIC 2.6 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HMC279MS8G v02.0701 MICROWAVE CORPORATION GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop


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    PDF HMC279MS8G HMC279MS8G

    HMC279MS8G

    Abstract: No abstract text available
    Text: HMC279MS8G v02.0701 MICROWAVE CORPORATION GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop


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    PDF HMC279MS8G HMC279MS8G

    Untitled

    Abstract: No abstract text available
    Text: HMC279MS8G v02.0701 MICROWAVE CORPORATION GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop


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    PDF HMC279MS8G HMC279MS8G

    Untitled

    Abstract: No abstract text available
    Text: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE


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    PDF HMC414MS8G HMC414MS8G

    HMC414MS8G

    Abstract: No abstract text available
    Text: HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE


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    PDF HMC414MS8G HMC414MS8G

    Untitled

    Abstract: No abstract text available
    Text: HMC414MS8G v00.0901 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB Saturated Power: +30 dBm


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    PDF HMC414MS8G HMC414MS8G

    HMC414MS8G

    Abstract: No abstract text available
    Text: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE


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    PDF HMC414MS8G HMC414MS8G

    Untitled

    Abstract: No abstract text available
    Text: HMC286 v01.0401 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC286 is ideal for: 2.4 GHz LNA • BlueTooth Noise Figure: 1.8 dB • Home RF Gain: 17 dB • 802.11 WLAN Radios Single Supply: +3V


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    PDF HMC286 HMC286

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE CORPORATION HMC286 v01.0401 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC286 is ideal for: 2.4 GHz LNA • BlueTooth Noise Figure: 1.8 dB • Home RF Gain: 17 dB • 802.11 WLAN Radios Single Supply: +3V


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    PDF HMC286 HMC286

    MICROWAVE Power Amplifier MMIC 2.6 GHz

    Abstract: No abstract text available
    Text: HMC287MS8 v01.0701 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER with AGC, 2.3 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features LNA for Spread Spectrum Applications: Gain: 21 dB • BLUETOOTH Noise Figure: 2.5 dB • HomeRF Gain Adjustment: 30 dB


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    PDF HMC287MS8 HMC287MS8 HMC287MS8G MICROWAVE Power Amplifier MMIC 2.6 GHz

    HMC386LP4

    Abstract: Power Amplifier MMIC 2.6 GHz
    Text: HMC386LP4 v01.0604 MICROWAVE CORPORATION MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 kHz • Industrial Controls


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    PDF HMC386LP4 HMC386LP4 Power Amplifier MMIC 2.6 GHz

    transistor 1203

    Abstract: No abstract text available
    Text: HMC386LP4 v00.1203 MICROWAVE CORPORATION MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5 dBm • Wireless Infrastructure Phase Noise: -114 dBc/Hz @100 kHz • Industrial Controls


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    PDF HMC386LP4 HMC386LP4 transistor 1203

    131907

    Abstract: No abstract text available
    Text: HMC921LP4E v01.0910 9 GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz Typical Applications Features The HMC921LP4E is ideal for: High Output IP3: +48 dBm • Cellular/3G & WiMAX/LTE/4G High Output P1dB: +33 dBm • Fixed Wireless & WLAN High Gain: 16 dB @ 900 MHz


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    PDF HMC921LP4E HMC921LP4E 131907

    Untitled

    Abstract: No abstract text available
    Text: HMC287MS8 v01.0701 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER with AGC, 2.3 - 2.5 GHz AMPLIFIERS - SMT 1 Typical Applications Features LNA for Spread Spectrum Applications: Gain: 21 dB • BLUETOOTH Noise Figure: 2.5 dB • HomeRF Gain Adjustment: 30 dB


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    PDF HMC287MS8 HMC287MS8 HMC287MS8G

    Untitled

    Abstract: No abstract text available
    Text: HMC921LP4E v02.0312 Amplifiers - Linear & Power - SMT GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz Typical Applications Features The HMC921LP4E is ideal for: High Output IP3: +48 dBm • Cellular/3G & WiMAX/LTE/4G High Output P1dB: +33 dBm • Fixed Wireless & WLAN


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    PDF HMC921LP4E HMC921LP4E

    Untitled

    Abstract: No abstract text available
    Text: HMC332 v00.0901 MICROWAVE CORPORATION GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Typical Applications Features The HMC332 is ideal for: Integrated LO Amplifier w/ Pdiss: < 20 mW • MMDS Conversion Loss / Noise Figure: 8.0 dB • PCMCIA Low LO Drive Level: 0 dBm


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    PDF HMC332 HMC332

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE CORPORATION HMC332 v00.0901 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Typical Applications Features The HMC332 is ideal for: Integrated LO Amplifier w/ Pdiss: < 20 mW • MMDS Conversion Loss / Noise Figure: 8.0 dB • PCMCIA Low LO Drive Level: 0 dBm


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    PDF HMC332 HMC332

    Untitled

    Abstract: No abstract text available
    Text: HMC332 v00.0901 MICROWAVE CORPORATION GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Typical Applications Features The HMC332 is ideal for: Integrated LO Amplifier w/ Pdiss: < 20 mW • MMDS Conversion Loss / Noise Figure: 8.0 dB • PCMCIA Low LO Drive Level: 0 dBm


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    PDF HMC332 HMC332 co603

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE CORPORATION HMC286 v01.0401 GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC286 is ideal for: 2.4 GHz LNA • BlueTooth Noise Figure: 1.8 dB • Home RF Gain: 17 dB • 802.11 WLAN Radios Single Supply: +3V


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    PDF HMC286 HMC286

    HMC414MS8G

    Abstract: No abstract text available
    Text: HMC414MS8G / 414MS8GE v04.0607 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V


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    PDF HMC414MS8G 414MS8GE HMC414MS8G HMC414MS8GE

    HMC414MS8GE

    Abstract: HMC414MS8G
    Text: HMC414MS8G / 414MS8GE v04.0607 GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE • MMDS Supply Voltage: +2.75V to +5V


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    PDF HMC414MS8G 414MS8GE HMC414MS8G HMC414MS8GE

    hmc789

    Abstract: H789 Arlon HMC789ST89E InGaP HBT Gain Block 4G mmic sot-89
    Text: HMC789ST89E v01.0710 Amplifiers - Driver & Gain Block - SMT 8 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, 0.7 - 2.8 GHz Typical Applications Features The HMC789ST89E is ideal for: High Output IP3: +42 dBm • Cellular/4G High Output P1dB: +25 dBm • Fixed Wireless & WLAN


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    PDF HMC789ST89E HMC789ST89E hmc789 H789 Arlon InGaP HBT Gain Block 4G mmic sot-89

    capacitor 10kpf

    Abstract: HMC605LP3 HMC605LP3E 10KPF
    Text: HMC605LP3 / 605LP3E v03.0809 LOW NOISE AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Typical Applications Features The HMC605LP3 / HMC605LP3E is ideal for: Noise Figure: 1.1 dB • Wireless Infrastructure Output IP3: +31 dBm


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    PDF HMC605LP3 605LP3E HMC605LP3E capacitor 10kpf 10KPF

    DC 0509

    Abstract: HMC605LP3 HMC605LP3E
    Text: HMC605LP3 / 605LP3E v02.0509 LOW NOISE AMPLIFIERS - SMT 8 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz Typical Applications Features The HMC605LP3 / HMC605LP3E is ideal for: Noise Figure: 1.1 dB • Wireless Infrastructure Output IP3: +31 dBm


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    PDF HMC605LP3 605LP3E HMC605LP3E DC 0509