microwave cooking circuit diagram
Abstract: STGW38IH120D GW38IH120D
Text: STGW38IH120D 30 A - 1200 V - very fast IGBT Preliminary Data Features • Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven
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STGW38IH120D
O-247
GW38IH120D
microwave cooking circuit diagram
STGW38IH120D
GW38IH120D
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GW38IH120D
Abstract: STGW38IH120D
Text: STGW38IH120D 30 A - 1200 V - very fast IGBT Preliminary Data Features • Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven
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STGW38IH120D
O-247
GW38IH120D
STGW38IH120D
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microwave cooking circuit diagram
Abstract: GW33IH120D STGW33IH120D
Text: STGW33IH120D 30 A - 1200 V - very fast IGBT Features • Low saturation voltage ■ High current capability ■ Low switching loss ■ Very soft ultra fast recovery antiparallel diode Applications 2 3 1 ■ Induction cooking, microwave oven ■ Soft switching application
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STGW33IH120D
O-247
GW33IH120D
microwave cooking circuit diagram
GW33IH120D
STGW33IH120D
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diodes
Abstract: Schottky Barrier Diodes rectifier
Text: 5 Diodes 5-1. Rectifier Diodes 5-2. Fast Recovery Rectifier Diodes 5-3. Ultra-Fast Recovery Rectifier Diodes 5-4. Damper Diodes 5-5. Schottky Barrier Diodes 5-6. Avalanche Diodes 5-7. Power Zener Diodes 5-8. Silicon Varistors 5-9. High Voltage Rectifier Diodes
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microwave oven fast recovery diode
Abstract: FR02-60 recovery diode FV5M-08 FV5M-06 R6000 Photo Flash Rectifiers rectifier diode piv ESJA53-12 diode PIV 2000 R100M
Text: LEADED THRU-HOLE : High Voltage Fast Recovery & Short Protection Rectifiers FAST RECOVERY HIGH VOLTAGE (PHOTO FLASH) RECTIFIER Operating Temperature -55°C to +135°C RF Cross Max. Avg. Peak Max Fwd Max Fwd Max Reverse Outline Part Number Reference Forward Inverse Surge
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FR02-25
R2500F
FR02-30
R3000F
FR02-35
R3500F
FR02-40
R4000F
FR02-45
R4500F
microwave oven fast recovery diode
FR02-60 recovery diode
FV5M-08
FV5M-06
R6000
Photo Flash Rectifiers
rectifier diode piv
ESJA53-12
diode PIV 2000
R100M
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FV5M-06
Abstract: FV5M-08 DIODE F10 HVR062 FR02-60 R350 FR02-25 fr05-15 FSD210H FV5M-05
Text: LEADED THRU-HOLE : High Voltage Fast Recovery & Short Protection Rectifiers FAST RECOVERY HIGH VOLTAGE (PHOTO FLASH) RECTIFIER Operating Temperature -55°C to +135°C Cross Max. Avg. Peak Max Fwd Max Fwd Max Reverse Outline Part Number Reference Forward Inverse Surge
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DO-41
FR02-25
R2500F
FR02-30
R3000F
DO-15
FR02-35
R3500F
FR02-40
R4000F
FV5M-06
FV5M-08
DIODE F10
HVR062
FR02-60
R350
FR02-25
fr05-15
FSD210H
FV5M-05
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FV5M-06
Abstract: fv5m-20 microwave oven fast recovery diode FR05-20 HVR062 FR02-25 ESJA53-20 FR02-35 FR02-40 R2500F
Text: LEADED THRU-HOLE : High Voltage Fast Recovery & Short Protection Rectifiers FAST RECOVERY HIGH VOLTAGE (PHOTO FLASH) RECTIFIER Operating Temperature -55°C to +135°C Cross Max. Avg. Peak Max Fwd Max Fwd Max Reverse Outline Part Number Reference Forward Inverse Surge
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DO-41
FR02-25
R2500F
FR02-30
R3000F
DO-15
FR02-35
R3500F
FR02-40
R4000F
FV5M-06
fv5m-20
microwave oven fast recovery diode
FR05-20
HVR062
FR02-25
ESJA53-20
FR02-35
FR02-40
R2500F
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FGH40N60UFD
Abstract: FGH40N60 fgh40n60ufdtu 1000 kw microwave inverter
Text: FGH40N60UFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications
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FGH40N60UFD
FGH40N60UFD
FGH40N60
fgh40n60ufdtu
1000 kw microwave inverter
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FGH40N60SFD
Abstract: FGH40N60SFDTU FGH40N60 IGBT welder circuit Circuit of welder IGBT inverter
Text: FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild ’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications
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FGH40N60SFD
FGH40N60SFD
FGH40N60SFDTU
FGH40N60
IGBT welder circuit
Circuit of welder IGBT inverter
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Untitled
Abstract: No abstract text available
Text: FGH40N60SFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications
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FGH40N60SFD
100oC
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Untitled
Abstract: No abstract text available
Text: FGH40N60UFD 600 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications
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FGH40N60UFD
100oC
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE135N
SE110N
UX-C2B
SE140N
STR83159
SE130N
STR2012
Transistor AC 51
SE140
SE115N
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Untitled
Abstract: No abstract text available
Text: FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT
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FGA25N120ANTDTU
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Untitled
Abstract: No abstract text available
Text: FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25C Using Fairchild's proprietary trench design and advanced NPT
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FGA25N120ANTD
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FGA15N120
Abstract: microwave oven fast recovery diode IGBT 200A 1200V application induction heating
Text: FGA15N120ANTD tm 1200V NPT Trench IGBT Features Description • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE sat , typ = 1.9V @ IC = 15A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT
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FGA15N120ANTD
FGA15N120ANTD
FGA15N120ANTDTU
FGA15N120
microwave oven fast recovery diode
IGBT 200A 1200V application induction heating
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Untitled
Abstract: No abstract text available
Text: FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25°C Using Fairchild's proprietary trench design and advanced NPT
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FGA25N120ANTDTU
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FGA25N120ANTD
Abstract: FGA25N120 IGBT FGA25N120ANTD FGA25N120ANT FGA25N120ANTD-F109
Text: FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient Description • Low Saturation Voltage: VCE sat , typ = 2.0 V @ IC = 25 A and TC = 25C Using Fairchild 's proprietary trench design and advanced NPT
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FGA25N120ANTD/FGA25N120ANTD
FGA25N120ANTD
FGA25N120
IGBT FGA25N120ANTD
FGA25N120ANT
FGA25N120ANTD-F109
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Untitled
Abstract: No abstract text available
Text: 600 V, TBD A, IGBT FGD633 Preliminary Features Package Low Saturation Voltage High Speed Switching With Integrated Low VF Fast Recovery Diode RoHS Compliant TO-3PF-3L VCE - 600 V IC-TBD A TC = 100 °C
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FGD633
FGD633-DS
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
B 2306 BARRIER RECTIFIER
diode RU 3B
FMQ2FU
RBV-406
UX-F5B
w 2206 schottky
fmv -30j
EZ0150
fmu 22 u
FMP-3FU
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ee1616
Abstract: lnk564pn HIGH VOLTAGE DIODE for microwave ovens microwave oven transformer diode sb2100 equivalent EE1616_ diode FR107 equivalent EE-16-16 EE16 fr107 equivalent
Text: DI-178 Design Idea LinkSwitch-LP 2.4 W, Low Cost, High Efficiency Linear Replacement Power Supply Application Device Power Output Input Voltage Output Voltage Topology Microwave Oven LNK564PN 2.4 W 90 – 265 VAC 12 V Flyback Design Highlights • Low cost, low component count, compact, lightweight linear
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DI-178
LNK564PN
CISPR-22/EN55022
DI-178
ee1616
lnk564pn
HIGH VOLTAGE DIODE for microwave ovens
microwave oven transformer
diode sb2100 equivalent
EE1616_
diode FR107 equivalent
EE-16-16
EE16
fr107 equivalent
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
diode 8603
SOT23 1Z
FMV-3HU
RM2C
RN4Z
General FBT
UX-F5B
3gu diode
diode RBV-406M
Part marking
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igbt 1000v 10A
Abstract: No abstract text available
Text: FGA50N100BNTD2 tm 1000V, 50A NPT-Trench IGBT CO-PAK Features General Description • • • • • Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche
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FGA50N100BNTD2
FGA50N100BNTD2
igbt 1000v 10A
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IN5342B
Abstract: diodes IN4001 IN4736A IN4448 IN4933-7 IN5921-58B IN914A-B GT60-005-10 UF160-005-06 RGP10A.M
Text: TABLE OF CONTENTS GENERAL PURPOSE RECTIFIERS . FAST RECOVERY RECTIFIERS . ULTRA FAST RECOVERY RECTIFIERS .
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UF30-005R-10R
30DFI-6)
UF50-005-10
HER501-8)
UF5400-8
UF60-005-10
UF80-005-06
UF160-005-06
FES16AT-JT)
UF300-005-06
IN5342B
diodes IN4001
IN4736A
IN4448
IN4933-7
IN5921-58B
IN914A-B
GT60-005-10
UF160-005-06
RGP10A.M
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CTU1S
Abstract: CTB-34 CTU-G3DR Sanken SH shv02
Text: SANKEN ELECTRIC U S A H E High Voltage Diodes D I 7 IVrm: 2—24kV ? m DDDDiaS Bio : 2mA/350mA r - 0 3 - Ì 5 T-02-0 SHV/HVR Absolute Maximum Ratings Rating/ Characteristics V rsm V rm lo If s m Tc kV (kV) (mA) (A) CC) SHV-02 Vf (V) 60HZ- Half Sine Wave
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2--24kV
2mA/350mA
T-02-0
SHV-02
SHV-03
SHV-06
SHV-08
SHV-10
SHV-12
SHV-14
CTU1S
CTB-34
CTU-G3DR
Sanken SH
shv02
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