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    MICROWAVE DIODE INCLUDING S PARAMETERS Search Results

    MICROWAVE DIODE INCLUDING S PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE DIODE INCLUDING S PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s- band Waveguide limiter

    Abstract: AEROFLEX Attenuators microwave transceiver MIL-STD-1553 cable connector Aeroflex KDI Resistor SURFACE MOUNT DIODES MIL GRADE GaAs tunnel diode GSM BTS antenna Ferrite Circulators at 15 ghz tunnel diode GaAs
    Text: RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 R F & M O D U L E S S U B S Y S T E M S C O M P O N E N T S D E V I C E S P E R F O R M A N C E Aeroflex is a world leader in the design, manufacture


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    Ferrite Circulators at 15 ghz

    Abstract: medical ultra micro coaxial cable Aeroflex KDI Resistor military resistors catalog MIL-STD-1553 cable connector KDI attenuator SURFACE MOUNT DIODES MIL GRADE kdi mixer analog phase shifters chip gsm multicoupler
    Text: ned by three tured above: mer-focused. hts reserved. me021r1_Aeroflex Micro. Bro.qxd 5/17/06 4:00 PM Page 1 RF & Microwave Devices Components RF Modules & Subsystems Capabilities Brochure Microelectronic Solutions – RFMW 2006 me021r1_Aeroflex Micro. Bro.qxd


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    PDF me021r1 Ferrite Circulators at 15 ghz medical ultra micro coaxial cable Aeroflex KDI Resistor military resistors catalog MIL-STD-1553 cable connector KDI attenuator SURFACE MOUNT DIODES MIL GRADE kdi mixer analog phase shifters chip gsm multicoupler

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    MMIC Amplifier Micro-X marking 420

    Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices


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    PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    microwave transistor bfy193

    Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


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    PDF MWP-25 MWP-35 microwave transistor bfy193 BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420

    UM 99

    Abstract: Microwave Diode including s parameters
    Text: UM9989 FAST MRI PROTECTION DIODES TM K EY FE A TU R ES DESCRIPTION • Available in surface mount package. • Metallurgical bond  Planar passivated chip  Ultra Low magnetic construction  Non cavity design  Thermally matched configuration  Low capacitance at 0 V bias


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    PDF UM9989 UM9989 UM 99 Microwave Diode including s parameters

    SIEMENS MICROWAVE RADIO 8 GHz

    Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG


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    PDF MWP-25 MWP-35 SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING

    PIN Diode Basics

    Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
    Text: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a


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    RFID 5.8Ghz

    Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION FEBRUARY 2000 Wireless Symposium 2000 is Stage for New Product Introductions Wireless Symposium/Portable by Design 2000 held in San Jose, CA February 2125 marked the introduction of 16 new MMIC products, covering DC-40 GHz,


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    PDF DC-40 HMC280MS8G HMC189MS8 RFID 5.8Ghz HMC264CB1 HMC265CB1 HMC266 HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


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    PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    BAR66

    Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
    Text: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode


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    RF coil MRI circuit

    Abstract: microwave receiver UM7201SM UMX9989AP diode mri pin switch
    Text: UMX9989AP DUAL ULTRA LOW MAGNETIC MOMENT FAST DIODES FOR MRI APPLICATIONS RoHS compliant KEY FEATURES DESCRIPTION The UMX9989AP is the first MRI switching diode module, designed to optimize performance and reduce assembly labor, cost, and polarity errors.


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    PDF UMX9989APTM UMX9989AP i989APTM UM9989AP" RF coil MRI circuit microwave receiver UM7201SM diode mri pin switch

    siemens spc 2

    Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
    Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are


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    PDF de/semiconductor/products/35/35 de/semiconductor/products/35/353 MWP-25 MWP-35 siemens spc 2 SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67

    gunn diode

    Abstract: No abstract text available
    Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description


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    Untitled

    Abstract: No abstract text available
    Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description


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    MICROWAVE ASSOCIATES ISOLATOR

    Abstract: AS218 transistor
    Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and


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    PDF CAT501-09A MICROWAVE ASSOCIATES ISOLATOR AS218 transistor

    Diodes

    Abstract: RF Diode Design Guide
    Text: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,


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    PDF eng508 BRO389-11B Diodes RF Diode Design Guide

    Cap 10uf 35v 20 tant smt

    Abstract: UGF25025
    Text: UGF25025 25W, 2.5 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.3 to 2.5 GHz. Rated with a minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.


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    PDF UGF25025 -30dBc -100kHz/ 100KHz UGF25025F UGF25025 Cap 10uf 35v 20 tant smt

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    operation of basic limiter circuit

    Abstract: burnout RF power
    Text: Protection for Power Sensitive Microwave Components PIN diode limiters are designed to protect power sensitive microwave components against a variety of high pow er C W and pulsed microwave signals. Basic PIN limiters utilize diodes resulting in low insertion loss at low power levels. A s the power level increases, the incident


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    gaas fet micro-X Package marking

    Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
    Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and


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    tunnel diode high frequency

    Abstract: 0818C L0218C GE "TUNNEL DIODE"
    Text: MICAS00016 0* Mica Microwave’s standard detector product line includes a broad range of proven designs that ex­ tend from 5 0 0 MHz to 26.5 GHz. These detectors are offered with three different device types; tunnel, biased Schottky, and zero bias Schottky. All models


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    PDF MICAS00016 MIL-STD-883. tunnel diode high frequency 0818C L0218C GE "TUNNEL DIODE"

    ZP0818CC01

    Abstract: ZP0818R x band diode detector waveguide microwave limiter PL0208CC01 PL0102CC01
    Text: Mica Microwave’s standard detector product line includes a broad range of proven designs that ex­ tend from 5 0 0 MHz to 26.5 GHz. These detectors are offered with three different device types; tunnel, biased Schottky, and zero bias Schottky. All models


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    PDF MIL-STD-883. ZP0818CC01 ZP0818R x band diode detector waveguide microwave limiter PL0208CC01 PL0102CC01