LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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ZL38004
Abstract: ZLS38502 ZL38004GGG2 BUT16
Text: ZL38004 Design Manual Part Number: ZL38004 Revision Number: 8.0 Issue Date: November 2012 ZL38004 Enhanced Voice Processor with Dual Wideband Codecs Design Manual Features November 2012 • 100 MHz 200 MIPs Microsemi voice processor with hardware accelerator.
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ZL38004
ZL38004
ZLS38502
ZL38004GGG2
BUT16
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EIA-481-B
Abstract: IEC61000-4-4 J-STD-020B TR13 UPT10 216-AA UPT12RE3 UPT10/TR13
Text: UPT5e3 – UPT48e3 UPT5Re3 – UPT48Re3 UPTB8e3 – UPTB48e3 SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SCOTTSDALE DIVISION APPEARANCE Microsemi’s new Powermite UPT series transient voltage suppressors feature oxide-passivated chips, with high-temperature solder bonds for high
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UPT48e3
UPT48Re3
UPTB48e3
in-1503
UPT5-48e3
UPT5R-48Re3
UPTB8-48e3
EIA-481-B
IEC61000-4-4
J-STD-020B
TR13
UPT10
216-AA
UPT12RE3
UPT10/TR13
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SOT-227 lead frame
Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic
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MIL-PRF-19500,
sO-268
O-220
O-220
O-247
O-264
OT-227
SOT-227 lead frame
5kw smps full bridge S.M.P.S
PLAD15KP
APT10026L2FLLG
5kw SMPS full bridge
Fast Recovery Rectifiers mx gp 043
SMBx6.0A
DO215AA
PFC 1.5kw
1.5ke series
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ZL38012
Abstract: ZL38004
Text: ZL38012 Design Manual Part Number: ZL38012 Revision Number: 3.0 Issue Date: November 2012 ZL38012 Voice Processor with Dual Narrow Band Codecs Design Manual Features November 2012 Ordering Information • 100 MHz 200 MIPs Microsemi voice processor with hardware accelerator.
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ZL38012
ZL38012
ZL38004
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IEC61000-4-4
Abstract: J-STD-020B MIL-PRF19500 UPT48 UPTB48 UPT10/TR13
Text: UPT5 – UPT48 UPTB5 – UPTB48 SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SCOTTSDALE DIVISION APPEARANCE Microsemi’s new Powermite UPT series transient voltage suppressors feature oxide-passivated chips, with high-temperature solder bonds for high surge capability, and negligible electrical degradation under repeated surge
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UPT48
UPTB48
DO-216
IEC61000-4-4
J-STD-020B
MIL-PRF19500
UPT48
UPTB48
UPT10/TR13
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MARKING T11 SOT23-5
Abstract: part T11 5pin sot23 T11 SOT23-5 ncp803 RoHS FM803 LM3724 LX6433CSE NCP803
Text: LX6433 TM Precision Voltage Monitor P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES WWW . Microsemi .C OM Precise Threshold Detection 1.105V ±0.02V 3V to 6.0V Operating Range Active Low RESET, Sink Current > 1mA RESET Pulse Duration Controlled, typical 100mS
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LX6433
100mS
OT-23,
FM803,
NCP803
LM3724
MARKING T11 SOT23-5
part T11 5pin sot23
T11 SOT23-5
ncp803 RoHS
FM803
LM3724
LX6433CSE
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Untitled
Abstract: No abstract text available
Text: UPT5e3 – UPT48e3, UPT5Re3 – UPT48Re3 and UPTB5e3 – UPTB48e3 Available 5V – 48V Small Footprint, Surface Mount Transient Voltage Suppressors DESCRIPTION Microsemi’s unique Powermite UPT series of transient voltage suppressors feature oxidepassivated chips with high-temperature solder bonds for high surge capability and negligible
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UPT48e3,
UPT48Re3
UPTB48e3
RF01103,
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400w class d schematic
Abstract: 27.12Mhz
Text: Application Note 1813 27.12 MHz, CLASS-E, 400W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Overview The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET hybrid. This Application Note or Reference Design Kit does not
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DRF1200
DRF1200/Class-E
DRF1200
1813-B/04
400w class d schematic
27.12Mhz
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60KS200C
Abstract: STA60K100P STA60K11P
Text: STA60K7.9P thru STA60K100P SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 60,000 WATTS PEAK PULSE POWER Designer's Data Sheet 7.9 - 100 VOLTS FEATURES: • 7.90-100 Volt Bidirectional • Smaller than Microsemi 60KS200C Types
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STA60K7
STA60K100P
60KS200C
MIL-PRF-19500
STA60K100P
STA60K11P
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Untitled
Abstract: No abstract text available
Text: LX6433 TM Precision Voltage Monitor P RODUCTION D ATA S HEET DESCRIPTION K EY FEAT U RES WWW . Microsemi .C OM ̇ Precise Threshold Detection 1.105V ±0.02V ̇ 3V to 6.0V Operating Range ̇ Active Low RESET, Sink Current > 1mA ̇ RESET Pulse Duration Controlled, typical 100mS
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LX6433
100mS
OT-23,
FM803,
NCP803
LM3724
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MT29C2G24MAKLA-XIT
Abstract: mt29C2G24
Text: MS29C2G24MAKLA1-XX 2Gb NAND FLASH x16 / 1Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.
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MS29C2G24MAKLA1-XX
MT29C2G24MAKLA-XIT"
MT29C2G24MAKLA-XIT
mt29C2G24
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Untitled
Abstract: No abstract text available
Text: MS29C4G48MAZAKC1-XX *PRELIMINARY 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.
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MS29C4G48MAZAKC1-XX
MT29C4G48MAZAPACA-XIT"
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Untitled
Abstract: No abstract text available
Text: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.
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MS29C4G48MAZAKC1-XX
MT29C4G48MAZAPACA-XIT"
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2N5005 TO-59
Abstract: JANS2N5005 ISO 23814 to59 TO-59 23795
Text: Microsemi PNP Transistors Part Number PNP 2N5955 2N5954 2N6111 2N6109 2N6107 2N5743 2N5744 2N5386 . TIP115 TIP116 TIP117 : 2N5286 2N5287 2N5384 2N5385 2N5408 2N5410 2N5409 2N5411 2N5003 2N5005 JAN2N5003 JAN2N5005 JANS2N5003 JANS2N5005 JANTX2N5003 JANTX2N5005
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2N5955
2N5954
2N6111
2N6109
2N6107
2N5743
2N5744
2N5386
TIP115
TIP116
2N5005 TO-59
JANS2N5005
ISO 23814
to59
TO-59
23795
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MIL I 23659
Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Text: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B
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O-220
T0-220
O-22C)
MIL I 23659
2N3183
2N3184
2N3185
2N3186
2N3195
2N3196
2N3198
2n3198 transistor
transistor 24405
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23581 i c
Abstract: ax 23581 ax 23581 i c
Text: Microsemi NPN Transistors Part Number NPN 2N5051 2N5052 TIP31 TIP31A TIP31B TIP31C 2N5074 2N5075 2N5076 2N5077 2N6121 2N6122 2N6465 2N6466 2N6474 2N6374 2N6373 2N6372 2N6288 2N6290 2N6292 2N5427 2N5428 2N5429 2N5430 2N6078 2N6077 2N6079 2N5730 TIP110 TIP111
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T0-220
O-220
23581 i c
ax 23581
ax 23581 i c
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175C
Abstract: 175C100B 175C120B 175C60B 175C80B
Text: Silicon Controlled Rectifier Series 175C Dim Inches Minimum Ì i k ui f 1 HI TO-209AB T093 Notes: 1. 3/4-16 UNF-3A 2. Full thread within 2 1/2 threads 3. For insulated cathode lead, add suffix "IL” to catalog number Microsemi Catalog Number 175C60B 175C80B
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O-209AB
00V/usec.
175C
175C100B
175C120B
175C60B
175C80B
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700 allen-bradley
Abstract: No abstract text available
Text: 6115950 MICROSEMI CORP/POWER 71C 00312 Series D T - 3 3 - f "5 PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes *700 Volts FEATURES • High Voltage Rating - 700 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue
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150C80B
Abstract: 150C100B 150C120B 150C60B d3000
Text: Silicon Controlled Rectifier eries A 50C Dim Inches Minim um Z -Y r x v " , u t T T*=r ^ i i i H l TO-209AB T093 Notes: 1. 3 /4 - 1 6 UNF-3A 2. Full thread within 2 1 /2 threads 3. For insulated cathode lead, add suffix ” IL” to catalog number „ Microsemi,
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T0-209AB
150C80B
150C100B
150C120B
150C60B
d3000
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175C100B
Abstract: 175C120B 175C60B 175C80B
Text: Seríes 175C Silicon Controlled Rectifier Dim Inches Minim um Z -Y r x v " , u t T T*=r ^ i i i H l TO-209AB T093 Notes: 1. 3 /4 - 1 6 UNF-3A 2. Full thread within 2 1 /2 threads 3. For insulated cathode lead, add suffix ” IL” to catalog number „ Microsemi,
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T0-209AB
175C100B
175C120B
175C60B
175C80B
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TL 413
Abstract: Tj33 ptc420
Text: 6115950 MICROSEMI CORP/POWER D T-J33 ->3 71C 0 0 3 1 8 f DE^IbllSTSD 0000310 0 Series PTC 413, PTC 420 High Voltage NPN Transistors 3.5 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue
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T-J33
TL 413
Tj33
ptc420
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M7 zener diode
Abstract: diode ZENER A8 DIODE 448 diode dc m7 1N350 1N3501 250 mw ultra stable diode zener diode M7 H 48 zener diode 1N3504
Text: Micro/semi Corp. $ The diode expena SANTA ANA, CA SCOTTSDALE. AZ F o r m o re in fo rm a tio n call: 60 2 941-6300 D E S C R IP T IO N This series of Microsemi 250mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured over
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1N3501
1N3504
250mW
PPM/1000
M7 zener diode
diode ZENER A8
DIODE 448
diode dc m7
1N350
250 mw ultra stable diode
zener diode M7
H 48 zener diode
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Microsemi HR2
Abstract: No abstract text available
Text: MICROSEMI CORP/ Ü1ATERTOUN SGE 3> • 13471b3 GülBl^ó 4^7 ■ U N I T DUAL POWER SCHOTTKY RECTIFIERS yig|g 60A Pk, 45V USD335CHR2 USD345CHR2 H J - o 3 - £ { FEATURES DESCRIPTION • • • • • • • The USD320C series has two Schottky barriers arranged in a common cathode
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13471b3
USD335CHR2
USD345CHR2
USD320C
USD300C
USD335C
USD335CHR2
USD345C
USD345CHR2
345CHR2.
Microsemi HR2
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