Untitled
Abstract: No abstract text available
Text: AP5025 8 Watt Current Sense Chip Resistors A very high power current sense chip resistor capable of dissipating 8 watts with recommended thermal management architecture on the PCB. • Power Dissipation 8 watts with 700 micron PCB thermal Pad • Low resistance values
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AP5025
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axial 2W resistor
Abstract: MDS-30124 MICRON POWER RESISTOR 2W
Text: Micron Power Resistors FRN Terminals And Leads In The Opposite Direction; Axial Configuration Part Numbering System FRW F R N Fusing resistor N 2 R 2 Mounting metal fitting N - Nill Nominal resistance The first two digits are for an effective value and the
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555The
110220ohms)
5555The
axial 2W resistor
MDS-30124
MICRON POWER RESISTOR 2W
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equivalent of 662K
Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W 662k MPR 55 F resistor ceramic MDS-1212 ML10L meg05n
Text: Micron Power Resistors Part Numbering System M N S Type MP - Pin terminal MH - Lug terminal MN - Vertical lead terminal MNS 0 5 Rated power 02 - 2W 10 - 10W 15 - 15W Element G-wire -wound type ceramic core S-Wire -wound type. (glass fiber core) R-Metal Oxide Film
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micron resistor
Abstract: micron power resistor RLDRAM micron 3*3 resistor
Text: TN-49-02: Exploring the RLDRAM II Feature Set Introduction Technical Note Exploring the RLDRAM II Feature Set Introduction With network line rates steadily increasing, memory density and performance are becoming extremely important in enabling network processors to perform packet
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TN-49-02:
09005aef810cb115/Source:
09005aef8108a30d
TN4902
micron resistor
micron power resistor
RLDRAM
micron 3*3 resistor
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MICRON POWER RESISTOR 2W
Abstract: No abstract text available
Text: OBSOLETE 256K, 512K x 64 SGRAM SODIMMs MT2LG25664 K H, MT4LG51264(K)H SYNCHRONOUS GRAPHICS RAM SODIMM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View)
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MT2LG25664
MT4LG51264
144-pin,
byte44
144-PIN
MICRON POWER RESISTOR 2W
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MT29F2G16ABA
Abstract: SEAM-40 SMD23 MICRON POWER RESISTOR H33 SEAF-40-05 PISMO2-00006 MT29F2G16AAA MICRON 1.8V 2GB NAND MT29F1G16 PISMO2-P6960
Text: Advance‡ PISMO2-00006: Micron Mobile SDR SDRAM + NAND Module Introduction Micron PISMO Module Data Sheet PISMO2-00006: Mobile SDR SDRAM + NAND Flash Introduction The PISMO Platform Independent Storage MOdule specification provides a standard external interface to ease memory performance evaluation. This document describes
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PISMO2-00006:
PISMO2-P6960
24AA64-I/ST
09005aef82c0b66c/Source:
09005aef82c0b648
MT29F2G16ABA
SEAM-40
SMD23
MICRON POWER RESISTOR H33
SEAF-40-05
PISMO2-00006
MT29F2G16AAA
MICRON 1.8V 2GB NAND
MT29F1G16
PISMO2-P6960
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MARKING CCK
Abstract: micron sram MT57V1MH18E MT57V512H36E
Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb4 SRAM 18Mb DDR SRAM 4-Word Burst MT57V1MH18E MT57V512H36E Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation
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MT57V1MH18E
MT57V512H36E
165-Ball
MT57V1MH18E
MARKING CCK
micron sram
MT57V512H36E
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Untitled
Abstract: No abstract text available
Text: Intel Xeon Processor MP with up to 2-MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, and 2 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®
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251931
Abstract: No abstract text available
Text: Intel Xeon Processor MP with up to 2-MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, and 2 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®
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512-KB
/512K
cache/400
package/603
BX80528KL160GE
/256K
BX80532KC1500E
251931
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, QDRb2 SRAM 36Mb QDR SRAM 2-WORD BURST MT54V2MH18A MT54V1MH36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE
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MT54V2MH18A
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micron sram
Abstract: G38-87 MT54V1MH18A MT54V512H36A
Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, QDRb2 SRAM 18Mb QDR SRAM 2-WORD BURST MT54V1MH18A MT54V512H36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE
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MT54V1MH18A
MT54V512H36A
165-Ball
MT54V1MH18A
micron sram
G38-87
MT54V512H36A
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4p toggle switch
Abstract: MARKING CCK MARKING CODE 9N micron sram MT57V1MH18A MT57V512H36A
Text: 1 MEG x 18, 512 x 36 2.5V VDD, HSTL, PIPELINED DDRb2 SRAM 18Mb DDR SRAM 2-Word Burst MT57V1MH18A MT57V512H36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation
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MT57V1MH18A
MT57V512H36A
165-Ball
MT57V1MH18A
4p toggle switch
MARKING CCK
MARKING CODE 9N
micron sram
MT57V512H36A
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xeon mp 4MB
Abstract: intel ia32 AE30 CK408 socket 615-PIN xeon mp 4MB thermal bt 690
Text: Intel Xeon Processor MP with up to 4MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, 2, 2.50, 2.80, and 3 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®
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Untitled
Abstract: No abstract text available
Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE
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MT54V512H18A
165-Pin
MT54V512H18A
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb4 SRAM 36Mb DDR SRAM 4-Word Burst MT57V2MH18E MT57V1MH36E Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation
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MT57V2MH18E
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Boundary Scan JTAG Logic
Abstract: No abstract text available
Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb2 SRAM 36Mb DDR SRAM 2-Word Burst MT57V2MH18A MT57V1MH36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation
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MT57V2MH18A
Boundary Scan JTAG Logic
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251931
Abstract: intel 251931 TAA 611 T12 intel 830 intel xeon 604 circuit diagram of heat sensor with fan cooling
Text: Intel Xeon Processor MP with up to 2MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, 2, 2.50, and 2.80 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, QDRb2 SRAM 36Mb QDR SRAM 2-WORD BURST MT54V2MH18A MT54V1MH36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE
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MT54V2MH18A
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MT57V1MH18A
Abstract: MT57V512H36A
Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb2 SRAM 18Mb DDR SRAM 2-Word Burst MT57V1MH18A MT57V512H36A FEATURES • • • • • • • • • • • • • • • • • Fast cycle times: 5ns, 6ns, and 7.5ns Pipelined double data rate operation
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MT57V1MH18A
MT57V512H36A
MT57V1MH18A
MT57V512H36A
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb2 SRAM 36Mb DDR SRAM 2-Word Burst MT57V2MH18A MT57V1MH36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation
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MT57V2MH18A
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 0.16µm Process 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM 2-WORD BURST MT54V512H18A Features Figure 1: 165-Ball FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE
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MT54V512H18A
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MT57V1MH18E
Abstract: MT57V512H36E
Text: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb4 SRAM 18Mb DDR SRAM 4-Word Burst MT57V1MH18E MT57V512H36E FEATURES • • • • • • • • • • • • • • • • 165-BALL FBGA Fast cycle times: 5ns, 6ns, and 7.5ns Pipelined double data rate operation
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MT57V1MH18E
MT57V512H36E
165-BALL
MT57V512H36E
MT57V1MH18E
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Untitled
Abstract: No abstract text available
Text: 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-BALL FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation
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MT54V512H18A
165-BALL
MT54V512H18A
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Untitled
Abstract: No abstract text available
Text: Micron Power Resistors “ FRN Terminals And Leads In The Opposite Direction; Axial Configuration Part Numbering System FRW Fusing resistor N 0 2 _ Element_ N: Metal oxide film typeW W: Wire-wound type Rated power 14 - 1/4W 12-1 /2W 0 2 -2 W 1 0-1 0 W
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OCR Scan
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220ohms)
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