Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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INFMP200206
dram structure
2240
6T SRAM
micron sram
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Atmel oak dsp core
Abstract: block diagram for barrel shifter PPAP "saturation arithmetic"
Text: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V
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16-bit
25-micron
20-micron
0876F
Atmel oak dsp core
block diagram for barrel shifter
PPAP
"saturation arithmetic"
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XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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Micron NAND
Abstract: design manual atmel atl ATL25 ATL35
Text: Below are the ATL25 0.25 micron , ALT35 (0.35 micron) and ATL60/ATLS60 (0.6 micron) design manual sections, followed by five sections which are common to all Atmel design manuals (Design, Test, Packaging, Q&R, and Military & Aerospace). ASIC Checklists Kickoff Meeting Checklist - V 3.2
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ATL25
ALT35
ATL60/ATLS60
ATL25
Micron NAND
design manual
atmel atl
ATL35
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fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
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OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
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Andrew
Abstract: RF 8SF
Text: Inside the New Computer Industry • January 2001 • Andrew Allison The 0.13 micron Race It appears that 0.13 micron gamesmanship is widespread: Despite the fact that I checked the 0.13 micron story twice with Motorola, what that company is really shipping Intelligence, December
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14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
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BOUT12
14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
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rpp1k1
Abstract: No abstract text available
Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate
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XT018
XT018
18-micron
rpp1k1
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UM 9515
Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
Text: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation
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1-800-55-OMRON
UM 9515
D5A-3210
D5A-1100
D5A-2100
D5A-3200
D5A-7400
plunger grease
OMRON m5-1
D5A-3310
E39-F4
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32M DPRAM
Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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Tree65
32M DPRAM
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
TM1019
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208-MIL
Abstract: mlp8 numonyx
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
208-MIL
mlp8 numonyx
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Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
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Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
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M25P
Abstract: M25P40vmn6p M25PX64 mlp8 micron VFQFPN8
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
M25P
M25P40vmn6p
M25PX64
mlp8 micron
VFQFPN8
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MG2000
Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers
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BOUT12
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
MATRA MHS, MG2
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RF3178
Abstract: polar modulator polar loop transmitter
Text: Optimum Technology Matching [POLARIS 2 TOTAL RADIO ™ Module] GaAs HBT Power Amplifiers 25 GHz FT, 2 Micron, High Efficiency, High Dynamic Range, Low Noise, High Linearity, Single Supply Transceivers Silicon BiCMOS 25 GHz FT, 0.5 Micron, Low-Cost Process
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RF3178
31dBm
RF3178
polar modulator
polar loop transmitter
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atmel 738
Abstract: MG1070 ATMEL 706 MG1001 atmel 829
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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out12,
BOUT12
atmel 738
MG1070
ATMEL 706
MG1001
atmel 829
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Untitled
Abstract: No abstract text available
Text: MICRON' I 4 MEG x 16 E D O D R A lV l TECHNOLOGY, INC. n P A M MT4LC4M16R6 MT4LC4M16N3 U r iM IV I For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply
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MT4LC4M16R6
MT4LC4M16N3
096-cycle
50-PlVl
50-PIN
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nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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VGC450/VGC453
VGC450/453
nd02d2
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dram 88 pin
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T
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MT12D88C25636
88-Pin
dram 88 pin
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2 bit magnitude comparator
Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and
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62A00
2 bit magnitude comparator
NCR asic
NCR Microelectronics Division
1-Bit full adder
30076
7217 up down counter
The Western Design Center
AOI22
using NAND gate construct an inverter
ncr 400
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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Untitled
Abstract: No abstract text available
Text: MICRON 4M E Gx4 . FPM DRAM DRAM MT4LC4M4B1, MT4LC4M4A1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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