PC/104
Abstract: No abstract text available
Text: MICRON MICRON MICRON MICRON Low power 200MHz PR266 or 250MHz (PR366) CPU options Up to 256MB SDRAM SST ATA-Disk Chip and CompactFlash support Integrated AGP (x2) Trident CyberBlade Graphics for LCD and CRT 10/100Base-T Ethernet Soundblaster compatible Audio (optional)
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200MHz
PR266)
250MHz
PR366)
256MB
10/100Base-T
PC/104
PC/104+
PC/104
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image sensor micron
Abstract: micron sensor micron HEADBOARD Micron Imaging Demo2 Camera Board Micron Sensor CMOS image sensor usb Contact Image Sensor Head Micron micron CMOS Camera ADAPTEC block diagram OF pentium 2
Text: Image Sensor Demo System Kits Introduction Image Sensor Demo System Kits Introduction Micron’s CMOS image sensor demo kits are USB-powered camera boards that enable easy testing and characterization of Micron sensors. The Micron Imaging demonstration system family supports the full line of Micron’s CMOS image sensor products.
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09005aef82ca4ad2/Source:
09005aef82ca8484
image sensor micron
micron sensor
micron HEADBOARD
Micron Imaging Demo2 Camera Board Micron Sensor
CMOS image sensor usb
Contact Image Sensor Head
Micron
micron CMOS Camera
ADAPTEC
block diagram OF pentium 2
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Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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AMI350XXPR
Abstract: ODCHXX16 MAP 3959 crystal oscillator 4049
Text: 0.35 Micron CMOS Pad Library Datasheets AMI350XXPR 3.3/5.0 Volt Section 4 PAD LIBRARY Revision 1.1 PAD LIBRARY SELECTIO DATASHEETS Pad Logic AMI350XXPR 0.35 micron CMOS Pad Library 4-3 AMI350XXPR 0.35 micron CMOS Pad Library Pad Logic PAD SELECTION GUIDE
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AMI350XXPR
ODCHXX16
MAP 3959
crystal oscillator 4049
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dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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INFMP200206
dram structure
2240
6T SRAM
micron sram
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Atmel oak dsp core
Abstract: block diagram for barrel shifter PPAP "saturation arithmetic"
Text: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V
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16-bit
25-micron
20-micron
0876F
Atmel oak dsp core
block diagram for barrel shifter
PPAP
"saturation arithmetic"
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XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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Micron NAND
Abstract: design manual atmel atl ATL25 ATL35
Text: Below are the ATL25 0.25 micron , ALT35 (0.35 micron) and ATL60/ATLS60 (0.6 micron) design manual sections, followed by five sections which are common to all Atmel design manuals (Design, Test, Packaging, Q&R, and Military & Aerospace). ASIC Checklists Kickoff Meeting Checklist - V 3.2
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ATL25
ALT35
ATL60/ATLS60
ATL25
Micron NAND
design manual
atmel atl
ATL35
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fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
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OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
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Andrew
Abstract: RF 8SF
Text: Inside the New Computer Industry • January 2001 • Andrew Allison The 0.13 micron Race It appears that 0.13 micron gamesmanship is widespread: Despite the fact that I checked the 0.13 micron story twice with Motorola, what that company is really shipping Intelligence, December
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02011-BRF-001-A
Abstract: M02011 TIA AGC application note
Text: 622Mbps Transimpedance Amplifier with AGC M02011 Low-power, high-sensitivity, 622Mbps transimpedance amplifier fabricated in sub-micron CMOS The M02011 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for
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622Mbps
M02011
M02011
02011-BRF-001-A
02011-BRF-001-A
TIA AGC application note
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micron sram
Abstract: No abstract text available
Text: PRESS RELEASE CYPRESS INTRODUCES ITS FIRST 0.35-MICRON SRAM Announces Working Silicon on 0.25-Micron Products SAN JOSE, Calif., November 18, 1997 - Cypress Semiconductor today introduced its first SRAM built in a 0.35-micron feature size. The introduction comes on the heels of Cypress’s first
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35-MICRON
25-Micron
CY7C1021,
35-micron
ahe10
micron sram
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m25p40vmb6txx
Abstract: M25PX64 M25P40-VMB6 M25P UID M25P40 JESD22-A114A M25P vdfpn8 MLP8 VDFPN8 package
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
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M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
m25p40vmb6txx
M25PX64
M25P40-VMB6
M25P UID
JESD22-A114A
M25P
vdfpn8
MLP8
VDFPN8 package
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14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
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BOUT12
14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
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UM 9515
Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
Text: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation
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1-800-55-OMRON
UM 9515
D5A-3210
D5A-1100
D5A-2100
D5A-3200
D5A-7400
plunger grease
OMRON m5-1
D5A-3310
E39-F4
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32M DPRAM
Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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Tree65
32M DPRAM
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
TM1019
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Untitled
Abstract: No abstract text available
Text: MICRON' I 4 MEG x 16 E D O D R A lV l TECHNOLOGY, INC. n P A M MT4LC4M16R6 MT4LC4M16N3 U r iM IV I For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply
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MT4LC4M16R6
MT4LC4M16N3
096-cycle
50-PlVl
50-PIN
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Untitled
Abstract: No abstract text available
Text: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT2LSDT432U,
MT4LSDT832UD
100-pin,
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MwT-273
Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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QQQ0S51
MwT-273
mwt 871
MwT-270
sii 021
s-parameter
MWT273HP
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F4029
Abstract: No abstract text available
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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651-67Q0
F4029
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nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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VGC450/VGC453
VGC450/453
nd02d2
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dram 88 pin
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T
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MT12D88C25636
88-Pin
dram 88 pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 16’ 32 M E Gx32 SDRAM DIMMs TECHNOLOGY, INC. MT8LSDT1632U, MT8LSDT3232U SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT8LSDT1632U,
MT8LSDT3232U
100-pin,
128MB
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2 bit magnitude comparator
Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and
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62A00
2 bit magnitude comparator
NCR asic
NCR Microelectronics Division
1-Bit full adder
30076
7217 up down counter
The Western Design Center
AOI22
using NAND gate construct an inverter
ncr 400
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