fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
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OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
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14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
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14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
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32M DPRAM
Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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Tree65
32M DPRAM
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
TM1019
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36168
Abstract: No abstract text available
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
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36168
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MG2000
Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers
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MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
MATRA MHS, MG2
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atmel 738
Abstract: MG1070 ATMEL 706 MG1001 atmel 829
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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atmel 738
MG1070
ATMEL 706
MG1001
atmel 829
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jtag 14
Abstract: No abstract text available
Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS
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MT29F16G08cbaca
Abstract: MT29F16G08CBACAWP mt29f16g08cba MT29F16G08C MT29F16G08CB MT29F16G08 NAND Flash MLC Micron NAND Flash MLC Die MT29F16G08CBACAW mt29f16g
Text: Specifications Data Sheets MLC Brand: Micron ~ Datasheet: NAND Flash MLC. 16132Gb. Async. Sync L72A ~ Rev. Date: 0212011, File Size: 2.92 MB B~s/Cell: Bus Wi<hh: xa CE Chill Count: 1 Chill Enable: Dual Component Density: 16Gb Fall: Micron Family: NAND Flash
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16132Gb.
48-pin
Exterm11:
MT29F16G08cbaca
MT29F16G08CBACAWP
mt29f16g08cba
MT29F16G08C
MT29F16G08CB
MT29F16G08
NAND Flash MLC
Micron NAND Flash MLC Die
MT29F16G08CBACAW
mt29f16g
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L74A
Abstract: AP-A-11
Text: Specifications Data Sheets MLC Brand: Micron ~ Datasheet: NAND 641128 12561512Gb. MLC. Async/Sync. L7 4A Q Rev. Date: 0412011, File Size: 3.08 MB B~s/Cell: Bus Wi<hh: xa CE Chill Count: 4 Chill Enable: Dual Component Density: 512Gb Depth: 8Gb Fall: Micron
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12561512Gb.
512Gb
52-pad
Exterm11:
L74A
AP-A-11
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MT29F128G08C
Abstract: MT29F128 MT29F128G08CECABH1-12
Text: Specifications Data Sheets MLC Brand: Micron ~ Datasheet: NAND 641128 12561512Gb. MLC. Async/Sync. L7 4A Q Rev. Date: 0412011, File Size: 3.08 MB B~s/Cell: Bus Wi<hh: xa CE Chill Count: 2 Chill Enable: Dual Component Density: 128Gb Depth: 16Gb Fall: Micron
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12561512Gb.
128Gb
100-ball
Exterm11:
MT29F128G08C
MT29F128
MT29F128G08CECABH1-12
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Micron TLC
Abstract: micron emmc Micron NAND onfi MICRON NAND MLC TLC nand MICRON NAND sLC micron ecc nand ONFI micron emmc application note SLC NAND endurance
Text: Micron Memory Which NAND solution is best for my design? Micron offers a full line of high-performance memory solutions—from SLC, MLC, and TLC to Serial NAND, e•MMC , and MCPs—for a variety of applications. And we work with chipset vendors, OS designers, and other
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Abstract: No abstract text available
Text: Micron Confidential and Proprietary P420m HHHL PCIe NAND SSD Features P420m Half-Height and Half-Length PCIe NAND Flash SSD MTFDGAR1T4MAX, MTFDGAR700MAX Features • • • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash ONFI 2.1-compliant Flash interface
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P420m
MTFDGAR700MAX
700GB,
700GB:
128KB
09005aef858c5716
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Micron NAND flash controller
Abstract: TLC nand Micron NAND Flash MLC Micron TLC nand flash ONFI 3.0 micron emmc nand flash tlc emmc ONFI ONFI 3.0
Text: NVM Advantages for Multiple Markets Micron Nonvolatile Memory Micron does more than design and manufacture nonvolatile NVM memory. We strive to solve design challenges through better engineering—by raising the bar on features, functionality, and performance. We’ll
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Micron NAND flash controller
TLC nand
Micron NAND Flash MLC
Micron TLC
nand flash ONFI 3.0
micron emmc
nand flash tlc
emmc
ONFI
ONFI 3.0
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MTFC4GACAANA-4M IT
Abstract: MTFC4GACAANA MTFC8GACAANA-4M IT micron marking code information MTFC8GLDDQ-4M IT MTFC4GAC MTFC4GACA JESD84-B451 4gb nand flash MTFC4G MTFC4GACAANA-4M
Text: Preliminary‡ Micron Confidential and Proprietary 4GB, 8GB: e•MMC Features e·MMC Memory MTFC4GACAANA-4M IT, MTFC8GACAANA-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball TBGA (RoHS compliant, "green" package)
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100-ball
51-compliant
84-B451)
11-signal
09005aef856fbc21
ps8210
MTFC4GACAANA-4M IT
MTFC4GACAANA
MTFC8GACAANA-4M IT
micron marking code information MTFC8GLDDQ-4M IT
MTFC4GAC
MTFC4GACA
JESD84-B451
4gb nand flash
MTFC4G
MTFC4GACAANA-4M
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MTFC4GACAJCN-4M IT
Abstract: MTFC8GAKAJCN-4M IT MTFC8GACAAAM-4M IT MTfc8g Micron MT47H64M16HR-3 IT Manufacturer ID list eMMC Specification eMMC 4.0 MTFC4G 221 ball eMMC memory MTFC32G
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMVEA-4M IT, MTFC8GLVEA-4M IT, MTFC16GJVEC-4M IT, MTFC32GJVED-4M IT, MTFC64GJVDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash
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MTFC16GJVEC-4M
MTFC32GJVED-4M
MTFC64GJVDN-4M
169-ball
09005aef84a4d6f8
64gb-it
MTFC4GACAJCN-4M IT
MTFC8GAKAJCN-4M IT
MTFC8GACAAAM-4M IT
MTfc8g
Micron MT47H64M16HR-3 IT
Manufacturer ID list eMMC
Specification eMMC 4.0
MTFC4G
221 ball eMMC memory
MTFC32G
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MG1070
Abstract: No abstract text available
Text: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using
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emmc bga 162
Abstract: BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GLDDQ-4M IT, MTFC8GLDDQ-4M IT MTFC16GJDDQ-4M IT, MTFC32GJDDQ-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball LBGA (RoHS 6/6compliant)
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MTFC16GJDDQ-4M
MTFC32GJDDQ-4M
100-ball
09005aef8523caab
4-32gb
100b-it
emmc bga 162
BGA 221 eMMC
MTFC4GLDDQ-4M IT
MTFC32GJDDQ-4M IT
emmc CID
eMMC 4.41 application note
MTFC4GLDDQ-4M
MMC04G
221 ball eMMC memory
MMC08G
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Untitled
Abstract: No abstract text available
Text: MG2RT Radiation Tolerant 0.5–µm CMOS Sea–of–Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
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MT29F256G08CUCCB
Abstract: MT29F32G08CB mt29f32g08cba
Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA, MT29F128G08CXACA, MT29F64G08CECCB, MT29F64G08CFACB MT29F128G08CKCCB, MT29F256G08CUCCB Features
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128Gb,
256Gb
MT29F32G08CBACA,
MT29F64G08CEACA,
MT29F64G08CFACA,
MT29F128G08CXACA,
MT29F64G08CECCB,
MT29F64G08CFACB
MT29F128G08CKCCB,
MT29F256G08CUCCB
MT29F256G08CUCCB
MT29F32G08CB
mt29f32g08cba
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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Untitled
Abstract: No abstract text available
Text: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod uct family. Several arrays up to 700k cells cover all sys tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E ]> • blllS^H DOQTSTb 122 ■ MRN ADVANCE MICRON 64K MT58LC64K18A6 18 SYNCHRONOUS SRAM 64K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • « • • • • • • • Fast access times: 7,10,12 and 15ns
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MT58LC64K18A6
MT58LC64K18A6EJ-10
MT56LC64K18A6
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Untitled
Abstract: No abstract text available
Text: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using
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Untitled
Abstract: No abstract text available
Text: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Unitsinixm -► j 50 I * - 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO PACKAGE TYPES \+m *\ 50 k 356
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