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    MICRON LP DDR2 Search Results

    MICRON LP DDR2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSTUB32872AHMLFT Renesas Electronics Corporation 28-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32872AHLF Renesas Electronics Corporation 28-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32872AHLFT Renesas Electronics Corporation 28-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32871AHLF Renesas Electronics Corporation 27-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32871AHLFT Renesas Electronics Corporation 27-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation

    MICRON LP DDR2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Schematic

    Abstract: DLP-HS-FPGA3 HSFPGA3 XC3S1400AFT256
    Text: D LP -H S -FP G A 3 LEAD FREE U S B - FP G A M O D U LE FEATURES: • • • • • • • • • Xilinx XC3S1400A-4FTG256C FPGA Utilized on the DLP-HS-FPGA3 Micron 32M x 8 DDR2 SDRAM Memory Built-In Configuration Loader; Writes the Bit File Directly to SPI Flash via High-Speed USB 2.0


    Original     		PDF XC3S1400A-4FTG256C 50-Pin, Schematic DLP-HS-FPGA3 HSFPGA3 XC3S1400AFT256

    Mini-DIMM

    Abstract: SODIMM SORDIMM VLP Mini-DIMM TN0455 MO-269 JEDEC MO 224 DDR3 miniDIMM JEDEC MO-224 MO-268
    Text: TN-04-55: DRAM Module Form Factors Introduction Technical Note Summary of Common DRAM Module Form Factors Introduction Seamless memory upgrades and replacements have always been requirements for modern digital systems, and industry-standard memory modules have helped fulfill


    Original     		PDF TN-04-55: MO-274 MO-224 09005aef83692b6b/Source: 09005aef83651758 tn0455 Mini-DIMM SODIMM SORDIMM VLP Mini-DIMM MO-269 JEDEC MO 224 DDR3 miniDIMM JEDEC MO-224 MO-268

    MT46H32M16LFBF

    Abstract: MT46H32M16LFBF-6 MT46H32M16LFCK-75 sac105 MT46H32M16LFCK-6 MT46H32M16LFCK smd diode s8 lp-ddr2 MT46H16M32LFCM-6 smd diode S4
    Text: TN-46-16: 512Mb Mobile DDR: 95nm to 78nm Introduction Technical Note 512Mb Mobile DDR: 95nm to 78nm Product Transition Guide Introduction This document describes critical product differences associated with the 512Mb Mobile LP DDR SDRAM product as it transitions from 95nm process technology to 78nm


    Original     		PDF TN-46-16: 512Mb 09005aef82dfb176 09005aef82dfb194 tn4616 MT46H32M16LFBF MT46H32M16LFBF-6 MT46H32M16LFCK-75 sac105 MT46H32M16LFCK-6 MT46H32M16LFCK smd diode s8 lp-ddr2 MT46H16M32LFCM-6 smd diode S4

    Micron Technology

    Abstract: No abstract text available
    Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and


    Original     		PDF 20Note/DRAM/TN4102 TN-41-04: TN-41-13: TN-46-02: TN-46-06: TN-46-11: TN-46-14: TN-47-19: TN-47-20: Micron Technology

    SMD MARKING CODE sdp

    Abstract: No abstract text available
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


    Original     		PDF MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 09005aef84427aab SMD MARKING CODE sdp

    MT42L256M32D2

    Abstract: LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


    Original     		PDF MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab MT42L256M32D2 LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2

    LPDDR2 SDRAM micron

    Abstract: lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


    Original     		PDF MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab LPDDR2 SDRAM micron lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    Untitled

    Abstract: No abstract text available
    Text: 4Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 134-ball 168-ball 09005aef84fe5e04

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 4Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 134-ball 168-ball 09005aef84427aab)

    RTL8139 reference design

    Abstract: rtl8139 manual RTL81390 RTL8139 Circuit Tundra Semiconductor tsi108 0x8000002A Micron 512MB NOR FLASH rt18019 FF000000 MT9HTF6472AY-40EA1
    Text: Freescale Semiconductor Application Note AN2924 Rev. 1.0, 09/27/2005 U-Boot for HPC II by Srikanth Srinivasan, Maurie Ommerman CPD Applications, Freescale Semiconductor, Inc. risc10@email.sps.mot.com This application note describes the process of obtaining U-Boot


    Original     		PDF AN2924 risc10 MPC7448 Tsi108 RTL8139 reference design rtl8139 manual RTL81390 RTL8139 Circuit Tundra Semiconductor tsi108 0x8000002A Micron 512MB NOR FLASH rt18019 FF000000 MT9HTF6472AY-40EA1

    DDR2 x32

    Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-G DDR2 x32 GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-Max

    K4J55323QF-GC20

    Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J55323QF-GC 256Mbit K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3

    DDR2 x32

    Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-GC14/16/20 DDR2 x32 GC14 K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User

    Transistor Checker Model LB-1

    Abstract: EP3CLS150F780 cyclone III EP3C40
    Text: Cyclone III Device Handbook Volume 1 Cyclone III Device Handbook Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CIII5V1-4.2 Document last updated for Altera Complete Design Suite version: Document publication date: 12.0 August 2012 2012 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX words and logos


    Original     		PDF

    RAS 0510 SUN HOLD

    Abstract: sun hold RAS 0510 SIRBA TCR513 MGT5100 bosch AL 1115 CV IBM lcd monitor circuit diagram free 004C 020C 24U02
    Text: MGT5100 User Manual G2 Communications Microcontroller Order Number: MGT5100UM/D Revision 0, April 2002 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.


    Original     		PDF MGT5100 MGT5100UM/D RAS 0510 SUN HOLD sun hold RAS 0510 SIRBA TCR513 bosch AL 1115 CV IBM lcd monitor circuit diagram free 004C 020C 24U02

    RAS 0510 SUN HOLD

    Abstract: LFP IR Receivers sun hold RAS 0510 X011F sct 29c 61 tm TCR513 datasheet for transistor bf 245c sm 0038 ir receiver tea 2030 tk 2838
    Text: Freescale Semiconductor Order Number: MGT5100UM/D Revision 0, April 2002 MGT5100 User Manual G2 Communications Microcontroller Freescale Semiconductor, Inc., 2004. All rights reserved. ll rights reserved. This page intentionally left blank. T-2 MGT5100 User Manual


    Original     		PDF MGT5100UM/D MGT5100 RAS 0510 SUN HOLD LFP IR Receivers sun hold RAS 0510 X011F sct 29c 61 tm TCR513 datasheet for transistor bf 245c sm 0038 ir receiver tea 2030 tk 2838

    EP3C10F256

    Abstract: tsmc 130 lp
    Text: Cyclone III Device Handbook Volume 1 Cyclone III Device Handbook Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CIII5V1-4.2 Document last updated for Altera Complete Design Suite version: Document publication date: 12.0 August 2012 2012 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX words and logos


    Original     		PDF

    K1B3216B2E

    Abstract: Marvell 88e111 schematic 20 pin lcd laptop LTI-SASF546-P26-X1 LDQ-M2212R1 HSMC debug header breakout board for Cyclone III board LCM-S01602DSR/C lcd 30 pin diagram lvds Marvell 88E1111 trace layout guidelines K1B3216B2E-BI70
    Text: Cyclone III 3C120 Development Board Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com Document Version: Document Date: 1.4 March 2009 Copyright 2009 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other


    Original     		PDF 3C120 K1B3216B2E Marvell 88e111 schematic 20 pin lcd laptop LTI-SASF546-P26-X1 LDQ-M2212R1 HSMC debug header breakout board for Cyclone III board LCM-S01602DSR/C lcd 30 pin diagram lvds Marvell 88E1111 trace layout guidelines K1B3216B2E-BI70

    SM5545

    Abstract: MT47H32M8BP-3
    Text: Cyclone III Development Board Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com Document Date: March 2008 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and


    Original     		PDF SJ/T11363-2006 SM5545 MT47H32M8BP-3

    LG color tv 21 inch Circuit Diagram schematics

    Abstract: LG color tv Circuit Diagram schematics samsung colour tv kit circuit diagram toshiba crt colour tv kit circuit diagram sony lcd tv circuit diagram free TX38D85VC1CAB TX38d85 touchpad use in stress meter UB141X03 lg flat crt tv electronic diagram
    Text: Acer TravelMate 270 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.T18V5.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 270 service guide.


    Original     		PDF T18V5 LG color tv 21 inch Circuit Diagram schematics LG color tv Circuit Diagram schematics samsung colour tv kit circuit diagram toshiba crt colour tv kit circuit diagram sony lcd tv circuit diagram free TX38D85VC1CAB TX38d85 touchpad use in stress meter UB141X03 lg flat crt tv electronic diagram

    RAS 0510 SUN HOLD

    Abstract: sun hold RAS 0510 SUN HOLD ras 0910 sm 0038 ir receiver diagram LG 21 fs 4 bg model circuits isd 1820 voice MGT5100 circuit integrate TB 1226 CN seagate hard disks RAS 1210 SUN HOLD
    Text: MGT5100 User Manual Telematics Microcontroller Order Number: MGT5100RM/D Revision 0.7, March 2002 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.


    Original     		PDF MGT5100 MGT5100RM/D RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD ras 0910 sm 0038 ir receiver diagram LG 21 fs 4 bg model circuits isd 1820 voice circuit integrate TB 1226 CN seagate hard disks RAS 1210 SUN HOLD

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx