dram structure
Abstract: 2240 6T SRAM micron sram
Text: Joint News Release by Infineon and Micron Infineon Technologies and Micron Technology Announce Cooperation to Develop ‘CellularRAM’ Munich, Germany/Boise, Idaho, USA, June 24, 2002 - Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced they
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INFMP200206
dram structure
2240
6T SRAM
micron sram
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Untitled
Abstract: No abstract text available
Text: 4’8 M EGx32 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT2LSDT432U,
MT4LSDT832UD
100-pin,
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MwT-273
Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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QQQ0S51
MwT-273
mwt 871
MwT-270
sii 021
s-parameter
MWT273HP
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F4029
Abstract: No abstract text available
Text: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally
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651-67Q0
F4029
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XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
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XH018
XH018
18-micron
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nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
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VGC450/VGC453
VGC450/453
nd02d2
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Infineon automotive semiconductor technology roadmap
Abstract: Infineon technology roadmap micron sram
Text: Joint News Release by Infineon Technologies and Micron Technology Infineon and Micron Announce Partnership to Develop Reduced Latency DRAM Munich, Germany / Boise, Idaho, USA – May 30, 2001 – Infineon Technologies AG FSE, NYSE: IFX and Micron Technology, Inc., (NYSE: MU) today announced that
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600Mbit/sec/pin
INFMP200105
Infineon automotive semiconductor technology roadmap
Infineon technology roadmap
micron sram
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dram 88 pin
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T
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MT12D88C25636
88-Pin
dram 88 pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 16’ 32 M E Gx32 SDRAM DIMMs TECHNOLOGY, INC. MT8LSDT1632U, MT8LSDT3232U SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT8LSDT1632U,
MT8LSDT3232U
100-pin,
128MB
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rpp1k1
Abstract: No abstract text available
Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate
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XT018
XT018
18-micron
rpp1k1
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toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16 MEG X 32 SDRAM DIMM MICRON' I TECHNOLOGY, INC. M T 4L S D T 1632U D SYNCHRONOUS DRAM MODULE For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Front View
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100-pin,
096-cycle
1632U
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4LC4M
Abstract: No abstract text available
Text: 4’8 M EGx32 DRAM DIMMs MICRON I TECHNOLOGY, INC. D P A |\/| MT2LDT432U X , MT4LDT832U (X) _ _ _ I WI f j | j I I I I •I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/ datasheet.html FEATURES
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MT2LDT432U
MT4LDT832U
100-pin,
096-cycle
100-Pin
4LC4M
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PT6042
Abstract: VGC453 model values for 0.18 micron technology cmos nd02d2
Text: V L S I TECHNOLOGY INC T3aa3M? oooaaio □ M7E D V L S I T echn o lo gy , in c . VTI ' PRELIMINARY -0 9 VGC450/VGC453 LIBRARY O.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS
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VGC450/VGC453
VGC453
VGC450
PT6042
model values for 0.18 micron technology cmos
nd02d2
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Untitled
Abstract: No abstract text available
Text: 4’ 8 M EGx64 MICRON I n 'm m n'zSE£ NONBUFFERED DRAM DIMMs D RAM MT4LDT464A X , MT8LDT864A (X) _ _ _ I WI f j | j I I I 1* 1 V y W •— ■— For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/
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MT4LDT464A
MT8LDT864A
168-pin,
096-cycle
168-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V32M4 - 8 Meg x 4 x 4 banks MT46V16M8 - 4 Meg x 8 x 4 banks M T46V8M 16 - 2 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html
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128Mb:
MT46V32M4
MT46V16M8
T46V8M
66-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MICRON' I TECHNOLOGY, INC. MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks M T46V4M 16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/datasheet. html
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MT46V16M4
MT46V8M8
T46V4M
66-PIN
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pic 8259
Abstract: sus_stat_n rtc backup battery circuit 2h48
Text: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two
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MT8LLN22NCNE
21PAD/22NCN
21PAD
22NCN
512KB
64-bit,
pic 8259
sus_stat_n
rtc backup battery circuit
2h48
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Untitled
Abstract: No abstract text available
Text: 4’8 MEGx32 MICRON* I SDRAM DIMMs TECHNOLOGY, INC. MT2LSDT432U, MT4LSDT832UD SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View
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MT2LSDT432U,
MT4LSDT832UD
100-pin,
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Untitled
Abstract: No abstract text available
Text: MICRON 8’16’ 32 M EGx72 I BUFFERED DRAM DIMMs n o AM LJ 11 M lV I MT9LD T 872(F) X, MT18LD(T)1672(F) X, MT36LD(T)3272(C)(F) X H n •■■ Itfl C j | J I I I For the latest full-length data sheet, please refer to the Micron Web site: www. micron, com/mti/msp/html/
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MT18LD
MT36LD
168-pin,
128MB
256MB
096-cycle
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CMOS
Abstract: No abstract text available
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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Abstract: No abstract text available
Text: L S I De | 5 3 0 4 3 0 4 L OGI C CORP 01 000004^ S : T-46-13-47 LSA2011 Two Micron HCMOS Structured A rray LSI LO G IC C O R P O R A T IO N G en eral Description The LSA2011 is a member of the 2-micron drawn, 1.4-micron effective HCMOS family of Structured
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T-46-13-47
LSA2011
RAM15,
EN015N
RAM015N
16-bit
Telex-172153
930/586/30K/IM/J
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NMOS depletion pspice model
Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
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MwT-273
Abstract: No abstract text available
Text: MwT-2 26 GHz High Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES 50 50 • 9 dB SMALL SIGNAL GAIN AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH • CHOICE OF CHIP AND THREE PACKAGE TYPES
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