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    MICRON 100 BALL BGA Search Results

    MICRON 100 BALL BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860PVR80D4 Rochester Electronics LLC 32-BIT, 80MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC855TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860TCZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy
    MPC860ENZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    MICRON 100 BALL BGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTFC4GACAANA-4M IT

    Abstract: MTFC4GACAANA MTFC8GACAANA-4M IT micron marking code information MTFC8GLDDQ-4M IT MTFC4GAC MTFC4GACA JESD84-B451 4gb nand flash MTFC4G MTFC4GACAANA-4M
    Text: Preliminary‡ Micron Confidential and Proprietary 4GB, 8GB: e•MMC Features e·MMC Memory MTFC4GACAANA-4M IT, MTFC8GACAANA-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball TBGA (RoHS compliant, "green" package)


    Original     		PDF 100-ball 51-compliant 84-B451) 11-signal 09005aef856fbc21 ps8210 MTFC4GACAANA-4M IT MTFC4GACAANA MTFC8GACAANA-4M IT micron marking code information MTFC8GLDDQ-4M IT MTFC4GAC MTFC4GACA JESD84-B451 4gb nand flash MTFC4G MTFC4GACAANA-4M

    emmc bga 162

    Abstract: BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G
    Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB: e•MMC Features e·MMC Memory MTFC4GLDDQ-4M IT, MTFC8GLDDQ-4M IT MTFC16GJDDQ-4M IT, MTFC32GJDDQ-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash • 100-ball LBGA (RoHS 6/6compliant)


    Original     		PDF MTFC16GJDDQ-4M MTFC32GJDDQ-4M 100-ball 09005aef8523caab 4-32gb 100b-it emmc bga 162 BGA 221 eMMC MTFC4GLDDQ-4M IT MTFC32GJDDQ-4M IT emmc CID eMMC 4.41 application note MTFC4GLDDQ-4M MMC04G 221 ball eMMC memory MMC08G

    CE51484

    Abstract: micron 100 ball BGA BGA256 BGA 256 PACKAGE power dissipation CG51114 BGA352 BGA576 CE51364 CG51284 BGA-576
    Text: ASIC Technology Brief Ball Grid Array BGA Packages SEPTEMBER 1995 Fujitsu, a world leader in packaging and interconnect technology now offers Ball Grid Array (BGA) packaging options in both our CG/CE46 (0.65 micron) and CG/CE51 (0.5 micron) high performance CMOS ASIC product families.


    Original     		PDF CG/CE46 CG/CE51 S-19176 ASIC-TB-20033-9/95 CE51484 micron 100 ball BGA BGA256 BGA 256 PACKAGE power dissipation CG51114 BGA352 BGA576 CE51364 CG51284 BGA-576

    MICRON BGA PART MARKING

    Abstract: RTT120 MT44K64M18 MT44K RLDRAM 3 MT44K32M36
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)


    Original     		PDF MT44K64M18 MT44K32M36 576Mb MT44K32M18 MT44K64M18 MT44K32M36. MT44K32M36RCT-125 MICRON BGA PART MARKING RTT120 MT44K RLDRAM 3 MT44K32M36

    MICRON BGA PART MARKING

    Abstract: MT44K64M18 MT44K32M36 RTT120 micron power 120w MT44K
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRCmin = 10ns RL3-1600 – 1.25ns and tRCmin = 12ns (RL3-1600)


    Original     		PDF MT44K64M18 MT44K32M36 576Mb MT44K32M18 MT44K64M18 MT44K32M36. MT44K32M36RCT-125 MICRON BGA PART MARKING MT44K32M36 RTT120 micron power 120w MT44K

    MT44K32M36

    Abstract: zq 405-MF
    Text: 1.125Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.07ns and tRC MIN = 8ns (RL3-1866) – 1.07ns and tRC (MIN) = 10ns


    Original     		PDF 125Gb: MT44K64M18 MT44K32M36 168-ball RL3-1866) RL3-1600) 576Mb MT44K32M36 zq 405-MF

    MT44K32M36

    Abstract: No abstract text available
    Text: 1Gb: x18, x36 TwinDie RLDRAM 3 Features TwinDie RLDRAM 3 MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns (RL3-1600) – 1.25ns and tRC (MIN) = 12ns


    Original     		PDF MT44K64M18 MT44K32M36 168-ball RL3-1600) 576Mb 09005aef84ebb323 MT44K32M36

    MTFC4GACAJCN-4M IT

    Abstract: MTFC8GAKAJCN-4M IT MTFC8GACAAAM-4M IT MTfc8g Micron MT47H64M16HR-3 IT Manufacturer ID list eMMC Specification eMMC 4.0 MTFC4G 221 ball eMMC memory MTFC32G
    Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMVEA-4M IT, MTFC8GLVEA-4M IT, MTFC16GJVEC-4M IT, MTFC32GJVED-4M IT, MTFC64GJVDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash


    Original     		PDF MTFC16GJVEC-4M MTFC32GJVED-4M MTFC64GJVDN-4M 169-ball 09005aef84a4d6f8 64gb-it MTFC4GACAJCN-4M IT MTFC8GAKAJCN-4M IT MTFC8GACAAAM-4M IT MTfc8g Micron MT47H64M16HR-3 IT Manufacturer ID list eMMC Specification eMMC 4.0 MTFC4G 221 ball eMMC memory MTFC32G

    MT44K16M36RB

    Abstract: No abstract text available
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns


    Original     		PDF 576Mb: MT44K32M18 MT44K16M36 RL3-2133) RL3-1866) RL3-1600) MT44K16M36RB

    MICRON BGA PART MARKING

    Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b59/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h

    MT49H16M18

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MT49H16M18

    Untitled

    Abstract: No abstract text available
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns


    Original     		PDF 576Mb: MT44K32M18 MT44K16M36 RL3-2133) RL3-1866) RL3-1600)

    Untitled

    Abstract: No abstract text available
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns


    Original     		PDF 576Mb: MT44K32M18 MT44K16M36 RL3-2133) RL3-1866) RL3-1600)

    Untitled

    Abstract: No abstract text available
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns


    Original     		PDF 576Mb: MT44K32M18 MT44K16M36 RL3-2133) RL3-1866) RL3-1600)

    MTfc8g

    Abstract: MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16
    Text: Micron Confidential and Proprietary 2GB, 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC2GMTEA-WT, MTFC4GMTEA-WT, MTFC8GLTEA-WT, MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT


    Original     		PDF MTFC16GLTAM-WT, MTFC16GLTDV-WT, MTFC16GJTEC-WT, MTFC32GLTDM-WT, MTFC32GLTDI-WT, MTFC32GJTED-WT, MTFC64GJTEF-WT 169-ball 09005aef8495885a n2m400 MTfc8g MTFC32GJTED regulator 2gb smd MTFC4GMTEAWT MTFC4GMTEA-WT MTFC16

    smd transistor marking HT1

    Abstract: MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM
    Text: 576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd transistor marking HT1 MT49H16M36 MICRON BGA PART MARKING MARKING SMD x9 RLDRAM

    MT44K32M18

    Abstract: No abstract text available
    Text: Advance‡ 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133)


    Original     		PDF 576Mb: MT44K32M18 MT44K16M36 09005aef84003617 MT44K32M18

    09005aef815b2df8

    Abstract: MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 19.2 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 09005aef815b2df8 MT49H32M18C

    32GB eMMC

    Abstract: MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5
    Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e•MMC Features e·MMC Memory MTFC4GMDEA-4M IT, MTFC8GLDEA-4M IT, MTFC16GJDEC-4M IT, MTFC32GJDED-4M IT, MTFC64GJDDN-4M IT Features Figure 1: Micron e·MMC Device • MultiMediaCard MMC controller and NAND Flash


    Original     		PDF MTFC16GJDEC-4M MTFC32GJDED-4M MTFC64GJDDN-4M 169-ball 09005aef8523ca91 4gb-64gb 441-it 32GB eMMC MTFC8GLDEA-4M IT micron eMMC 5.0 emmc bga 162 BGA 221 eMMC micron emmc application note 221 ball eMMC memory emmc 4.41 firmware operation MTFC4G micron emmc 4.5

    576mb

    Abstract: MT44K16M36PA-093E
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K32M18 – 2 Meg x 18 x 16 Banks MT44K16M36 – 1 Meg x 36 x 16 Banks Options1 Features • Clock cycle and tRC timing – 0.93ns and tRC MIN = 8ns (RL3-2133) – 0.93ns and tRC (MIN) = 10ns (RL3-2133) – 1.07ns and tRC (MIN) = 8ns


    Original     		PDF 576Mb: MT44K32M18 MT44K16M36 09005aef84003617 576mb MT44K16M36PA-093E

    MICRON BGA PART MARKING

    Abstract: 195u MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING 195u MT49H16M36

    MICRON BGA PART MARKING

    Abstract: RLDRAM 09005aef809f284b MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING RLDRAM MT49H16M36

    MT49H16M36

    Abstract: No abstract text available
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MT49H16M36

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • •


    Original     		PDF Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18P