65162C
Abstract: 65162 HM-65162 B-2206
Text: HM 65162 MATRA MHS 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 × 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL
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HM-65162
90LCC
65162C
65162
B-2206
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65162
Abstract: HM65162 HM-65162
Text: HM65162 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL compatible and operate from single 5 V supply thus
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HM65162
HM-65162
65162
HM65162
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u2225b
Abstract: MCT12E U6204 U6202B U2829 U327M MC50K g1140 U2528B U427B
Text: Quality and Reliability Report 1998 TEMIC Semiconductors 06.98 Table of Contents TEMIC QUALITY POLICY .1 QUALITY SYSTEM .2
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65162 MATRA MHS 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are T IL
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HM-65162
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TRANSISTOR ww1
Abstract: ww1 47 transistor VW-F10 a05111
Text: Temic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL
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hm65162
HM-65162
MIL-M-38510H
Sflbfl45b
0D074D5
00Q7431
TRANSISTOR ww1
ww1 47 transistor
VW-F10
a05111
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Untitled
Abstract: No abstract text available
Text: Temic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL
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HM65162
HM-65162
Sabfl45b
0D074D5
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HM6116LP-3
Abstract: HM6116LP-4 upd446 HM6116LP-2 HM6116FP-3 Hitachi Scans-001 HM6116L-5 HM6116LP HM6116LP-2 HM6116LP-3 hm65161 HM6116FP-2
Text: - 50 - 16K m HM6116FP-2 % tt « CC 0-70 ÎAAC max ns) TCAC max (ns) 120 TOE max (ns) CMOS -, TOH min (ns) *• y TOD max (ns) TWP min (ns) TDS min (ns) TDH nin (ns) 80 10 70 35 HITACHI 0—70 150 100 15 50 90 40 10 0—70 200 120 15 60 120 60 10 HM6116L-2
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HM6116FP-2
HM6116FP-3
HM6116FP-4
HM6116L-2
HM65728N-2
HM65728N-5
HY61C16-45
HY61C16-55
IIY61C16-70
HY61C16A-25
HM6116LP-3
HM6116LP-4
upd446
HM6116LP-2
Hitachi Scans-001
HM6116L-5
HM6116LP HM6116LP-2 HM6116LP-3
hm65161
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MK48Z02
Abstract: M58725P HARRIS 7555 HM6116LP-3 HM65161-5 HM6116LP-2 MB8128 16116FP 24PIN CY7C128-45
Text: - 16 K X ¿&&ÍEH m % i t £t OC TAAC TCAC aax ns) (us) nMOS 'f S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) « TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN A M IDD aax (ibA)
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24PIN
Am9128-15
Aa9128-20
HM65728N-2
HM65728N-5
HY61C16-45
HY61C16-55
IIY61C16-70
HY61C16A-25
HY61C16A-35
MK48Z02
M58725P
HARRIS 7555
HM6116LP-3
HM65161-5
HM6116LP-2
MB8128
16116FP
CY7C128-45
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Untitled
Abstract: No abstract text available
Text: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)
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F12-TM
65162/Rev
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Untitled
Abstract: No abstract text available
Text: I lM lI September 1989 HM 65162 DATA SHEET 2 kX 8 VERY LOW POWER CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 ^W (typ)
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65162
Abstract: f920p mhs hm65162
Text: 4TE D • S ñ b ñ 4Sti G O a i S T ? SflE ■ M M H S ìilW ■ W Ih H B _ ~ P -4 L-'Z.'P-, »"ZSeptember 1990 MA TR A M H S HM 65162 DATASHEET 2 kX 8 VERY LOW POWER CMOS SRAM FEATURES « . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max
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I--F14
65162
f920p
mhs hm65162
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hm65162c-5
Abstract: No abstract text available
Text: HIM March 1994 HM 65162 DATA SHEET 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL: 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2.0 nW (TYP) DATA RETENTION : 0.8 pW (TYP) . WIDE TEMPERATURE RANGE: - 55 TO +125 °C
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selec62
65162/Rev
hm65162c-5
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Untitled
Abstract: No abstract text available
Text: H^E D • Söbf lM Sb □DDl'ìD'ì S I T H MMHS _ 3 ü ± & r Z 3 ~/2 . nllll January 1991 MATRA M H S HM 65162 HI-REL DATA SHEET 2 kx8 VERY LOW POWER CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS . ACCESS TIME: 70/85 ns . VERY LOW POWER CONSUMPTION
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Untitled
Abstract: No abstract text available
Text: Tem ic HM65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low pow er CM O S stalic RAM organized as 2048 x 8 bits. It is m anufactured using the M H S high perform ance CM O S technology. All inputs and outputs o f the H M -65I62 are TTL
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HM65162
-65I62
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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