Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGP20N35CL Search Results

    MGP20N35CL Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGP20N35CL Motorola SMARTDISCRETES Internally Clamped, N-Channel IGBT Original PDF
    MGP20N35CL On Semiconductor SMARTDISCRETES Internally Clamped N-Channel IGBT Original PDF
    MGP20N35CL/D On Semiconductor 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V CE(on) = 1.8 VOLTS 350 VOLTS (CLAMPED) Original PDF
    MGP20N35CL/D On Semiconductor 20 AMPERES VOLTAGE CLAMPED Original PDF
    MGP20N35CL-D On Semiconductor SMARTDISCRETES Internally Clamped, N-Channel IGBT Original PDF
    MGP20N35CLG On Semiconductor IGBT Chip: N Channel: 320V: TO-220AB: 3-Pin Original PDF

    MGP20N35CL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
    Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		MGP20N35CL/D MGP20N35CL NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL PDF

    MGP20N35CL

    Abstract: mosfet, igbt, transistor NT 407 F TRANSISTOR TO 220
    Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		MGP20N35CL/D MGP20N35CL MGP20N35CL/D* MGP20N35CL mosfet, igbt, transistor NT 407 F TRANSISTOR TO 220 PDF

    mgb20n40cl

    Abstract: 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl 340G TO-220AB footprint Motorola Master Selection Guide MGP20N60 MMSF4P01HDR1 MTD20N06HD MTD20N06HDL MTD20P06HDL MTP75N06HD PDF

    HC08MP16

    Abstract: ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic
    Text: BR1480/D Silicon Solutions for Off Line Motor Drives • Application Specific MCU’s • Optoisolators • MOS Gate Drivers and Control IC’s • Discrete Insulated Gate Bipolar Transistors • Input Rectifiers • Hybrid IGBT Power Modules • High Voltage MOSFETS for Power Supply


    Original     		BR1480/D K1TITC122/D K1TITC132/D HC08MP16 ac motor speed control circuit diagram with IGBT schematic diagram motor control using pwm module 1 HP SINGLE PHASE induction motor speed control using pwm inverter use igbt for 3 phase induction motor PWM generator for IGBT DC MOTOR SPEED CONTROL USING IGBT MGB20N40CL circuit diagram MC33153 12 volt dc to 220 volt ac inverter schematic PDF

    mgb20n40cl

    Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530
    Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY


    Original     		MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530 PDF

    tl4311

    Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
    Text: SG388CH/D 2000  4   2         SG388CH/D 2000  3   2  SCILLC,2000  © 1999 “” http://onsemi.com.cn         SCI LLC      ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O


    Original     		SG388CH/D r14525 SG388CH/D tl4311 SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate-Emitter ESD protection, Gate-Collector overvoltage


    OCR Scan     		MGP20N35CL/D MGP20N35CL 21A-06 O-220AB) PDF

    GP20N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) T his Logic Level Insulated G ate B ip o la r T ra n s is to r (IG BT)


    OCR Scan     		MGP20N35CL/D GP20N35CL GP20N PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Channel IGBT MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    OCR Scan     		MGP20N35CL -220A PDF

    power mosfet transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvanced Information MGP20N35CL SMARTDISCRETES In te rn a lly C lam p ed , N -C h an n e l IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features Gate-Emitter ESD protection, Gate-Collector overvoltage


    OCR Scan     		MGP20N35CL -220A power mosfet transistor PDF

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan     		2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code PDF