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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is	OCR Scan	TCJ-220 MGP14NG0E	PDF

Catalog Datasheet

Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is

OCR Scan

TCJ-220 MGP14NG0E

PDF