Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFS52B2122 Search Results

    MGFS52B2122 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFS52B2122 Mitsubishi 2.1 = 2.2 GHz BAND 100W GsAs FET Scan PDF

    MGFS52B2122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGFS52B2122

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS52B2122 ft 8«^ 2.1 - 2.2 GHz BAND 160W GaAs FET DESCRIPTION o u t l in e The MGFS52B2122 is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees


    OCR Scan     		PDF MQFS52B2122 12GHz MGFS52B2122 GF-49 12GHz May-01 MGFS52B2122

    MGFS52B2122

    Abstract: F217
    Text: MITSUBISHI S EM IC O N DU CTO R <GaAs FET> MGFS52B2122 “ ílK Í^ 2.1 - 2.2 QHz BAND 160W GaAs FET DESCRIPTION OUTLINE The MGFS52B2122 is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees


    OCR Scan     		PDF MGFS52B2122 GF-49 MGFS52B2122 17GHz 32dBm 17GHz 43dBm Feb-02 F217