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Mitsubishi Electric MGFK35V4045-01 RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
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MGFK35V4045 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFK35V4045		Mitsubishi	14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFK35V4045		Mitsubishi	14.0-14.5 GHz BAND 3W INTERNALLY MATCHED GaAs FET		Scan	PDF
MGFK35V4045		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
MGFK35V4045		Unknown	FET Data Book		Scan	PDF

MGFK35V4045 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFK35V4045 MGFK35V4045	PDF
35W amplifiers Abstract: No abstract text available Text: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFK35V4045 MGFK35V4045 35W amplifiers	PDF
MGFK35V4045 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V4045 14.0 ~ 14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC	Original	MGFK35V4045 MGFK35V4045	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGFK35V4045 Abstract: No abstract text available Text: M ITSUBISHI S E M IC O N D U C T O R <GaAs FET> ÜGFK35V4045 14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFK35V4045 is an internally impedance matched GaAs power FET especially designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGFK35V4045 MGFK35V4045 1200mA)	PDF
Untitled Abstract: No abstract text available Text: Ku B A N D IN T ERN A LLY M A T C H E D G aA s FET MGFKxxVxxxx Series T y p ic a l C h a ra c te ristic s Type M G FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S PidB dBm GlP f (dB) (GH z )	OCR Scan	FK35V2228 MGFK3SV2732 MGFK38V2228 MGFK38V2732 MGFK25V4045 MGFK30V404S MGFK33V4045 MGFK35V4045 MGFK37V4045 MGFK41V404S	PDF
MGFK30M4045 Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 Text: - 156 - M € ± € m 1 & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228	OCR Scan	MGFK30M4045 MGFK33M4045 MGFK35M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 MGFK37V4Ã MGFX38V0005 MGFX38V0510 MGFX38V1722 mgfx35v0510 MP6704 MGFX35V0005 M-Typ	PDF
3642G Abstract: No abstract text available Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m	OCR Scan		PDF
MGFK35V4045-01 Abstract: No abstract text available Text: A m it s u b is h i M G FK37V XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFK37VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P-idB = 5.5W (TYP)	OCR Scan	FK37V MGFK37VXXXX MGFK35V4045-01 MGFK35V4045-51	PDF
MGFK35V2732-01 Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V Text: ^M ITSUBISHI MGFK35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFK35VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 3.5 (TYP)	OCR Scan	MGFK35VXXXX MGFK35VXXXX MGFK35V2228 MGFK35V2228-01 MGFK35V2228-51 MGFK35V2732-01 MGFK35V2732-51 MGFK35V4045-01 FK35V4045-51 MGFK35V2732-51 FK35V	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK35V4045 1 4 .0 — 1 4 .5 G H z BAND 3 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The M G F K 3 5 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5	OCR Scan	GFK35V4045 MGFK35V4045	PDF
MGFK37V4045 Abstract: No abstract text available Text: Ku BAND INTERNALLY MATCHED GaAs FET MGFKxxVxxxx Series Typical Characteristics P ld i dBm G lp (dB) f (GHz) MGFK35V2228 3 5 .5 7 .0 1 2 .2 - 1 2 .8 •'nBQ« 3 5 .5 7 .0 1 2 .7 - 1 3 .2 3 8 .0 6 .0 3 8 .0 Type 3» M Q fK a n r^ S MGFK38V2732 MGFK25V4045	OCR Scan	GF-14 GF-27 MGFK35V2228 MGFK38V2732 MGFK25V4045 MGFK30V4045 MGFK33V4G45 MGFK35V4045 MGFK37V4045	PDF