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    MGFC47A7785 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC47A7785 Mitsubishi 7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET Original PDF

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    50W 4 GHz linear power amplifier

    Abstract: GF53 "GaAs FET" GAAS FET AMPLIFIER f 10Mhz to 2 GHz High Power GaAs FET MITSUBISHI ELECTRIC SEMICONDUCTOR MGFC47A7785
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A7785 7.7 ~ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION FEATURES OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ∼ 8.5


    Original
    PDF MGFC47A7785 MGFC47A7785 168mA 35dBm 10MHz June/2004 50W 4 GHz linear power amplifier GF53 "GaAs FET" GAAS FET AMPLIFIER f 10Mhz to 2 GHz High Power GaAs FET MITSUBISHI ELECTRIC SEMICONDUCTOR

    MGFC47A7785

    Abstract: GF53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A7785 7.7 ~ 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION FEATURES OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ∼ 8.5


    Original
    PDF MGFC47A7785 MGFC47A7785 168mA 35dBm 10MHz GF53

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5


    Original
    PDF MGFC47A7785 MGFC47A7785

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5


    Original
    PDF MGFC47A7785 MGFC47A7785

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FETs MGFC47A7785 7 .7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47A7785 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 7.7 ~ 8.5GHz


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    PDF MGFC47A7785 MGFC47A7785 47dBm 25deg 25deg 168mA