MGFC45V5867 Search Results

MGFC45V5867 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC45V5867		Mitsubishi	5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET		Original	PDF

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC45V5867 5.8 – 6.75 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFC45V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC45V5867 MGFC45V5867 75GHz
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC45V5867 5.8 – 6.75 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFC45V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC45V5867 MGFC45V5867 75GHz 25ohm GF-38
MGFC45V5867 Abstract: No abstract text available Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5867 5.8 ~ 6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004	Original	PDF	June/2004 MGFC45V5867 75GHz MGFC45V5867
DELTA 0431 Abstract: MGFC45V5867 PT 8A 3280 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5867 5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING Unii:millimeters inches The MGFC45V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz	OCR Scan	PDF	MGFC45V5867 75GHz MGFC45V5867 GF-38 25deg DELTA 0431 PT 8A 3280