MGFC44V3436
Abstract: power amplifier 5 ghz
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3436
MGFC44V3436
-45dBc
25deg
power amplifier 5 ghz
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3436
MGFC44V3436
-45dBc
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC44V3436 3.4 – 3.6 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3436
MGFC44V3436
-45dBc
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C 34 F
Abstract: MGFC44V3436 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3436
MGFC44V3436
-45dBc
120mA
item-51,
10MHz
C 34 F
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
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F236
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3436
MGFC44V3436
-45dBc
25deg
June/2004
F236
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60Ghz
Abstract: MGFC44V3436
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4 - 3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC44V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC44V3436
MGFC44V3436
-45dBc
25deg
60Ghz
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC44V3436 is an internally im pedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The herm etically sealed m etal-ceramic
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OCR Scan
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MGFC44V3436
FC44V3436
-45dBc
120mA
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