MGFC39V5867
Abstract: No abstract text available
Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8 ~ 6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004
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June/2004
MGFC39V5867
75GHz
MGFC39V5867
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V5867
MGFC39V5867
75GHz
50ohm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V5864 5.8 – 6.75 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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PDF
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MGFC39V5864
MGFC39V5867
75GHz
50ohm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.75 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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Original
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PDF
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MGFC39V5867
MGFC39V5867
75GHz
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MGFC39V5867
Abstract: 68 0063
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5867 5.8~6.75GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC39V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package
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OCR Scan
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MGFC39V5867
75GHz
MGFC39V5867
39dBm
RG-50
Ta-25deg
68 0063
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