MGFC38V5867
Abstract: No abstract text available
Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8 ~ 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004
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June/2004
MGFC38V5867
75GHz
MGFC38V5867
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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Original
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PDF
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MGFC38V5867
MGFC38V5867
75GHz
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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Original
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PDF
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MGFC38V5867
MGFC38V5867
75GHz
100ohm
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s18a
Abstract: MGFC38V5867 675g
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8~6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package
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OCR Scan
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MGFC38V5867
75GHz
MGFC38V5867
38dBm
25deg
s18a
675g
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